SECOS STT6405_09

STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
Ω
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TSOP-6
DESCRIPTION
The STT6405 uses advanced trench technology
to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
A
E
L
B
FEATURES
P-Channel
Lower Gate Charge
Small Footprint & Low Profile Package
1256
78
D 6 D5 S 4
REF.
A
B
C
D
E
F
3
6405
C
H
J
K
DG
Drain
MARKING CODE
F
Gate
= Date Code
4
D1 D 2 G 3
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
Source
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
1
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Thermal Resistance- Junction to Ambient Max.
SYMBOL
RATINGS
UNIT
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
PD @TA=25℃
-30
±20
-5.0
-4.2
-20
2
0.016
-55 ~ +150
62.5
V
V
Tj, Tstg
RθJA
A
A
W
W/ ℃
℃
℃/ W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=55℃)
2
Static Drain-Source On-Resistance
2
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Notes:
BVDSS
VGS(th)
gfs
IGSS
MIN TYP MAX UNIT
-30
-1.0
-
8.6
-
-3.0
±100
-1
IDSS
-5
50
RDS(ON)
75
Qg
14.7
18
Qgs
2
Qgd
3.8
Td(on)
8.3
Tr
5
Td(off)
29
Tf
14
Ciss
700 840
Coss
120
Crss
75
Rg
10
SOURCE-DRAIN DIODE
VSD
-1.0
Trr
23.5
Qrr
13.4
-
TEST CONDITIONS
Ω
VGS = 0, ID= -250 µA
VDS = VGS, ID= -250µA
VDS = -5V, ID = -5.0A
VGS = ±20 V
VDS = -30 V, VGS = 0
VDS = -24 V, VGS = 0
VGS = -10 V, ID = -5.0 A
VGS = -4.5 V, ID = -4.0 A
ID = -5.0 A
VDS = -15 V
VGS = -10 V
VDS = -15 V
VGS = -10 V
RG = 3Ω
RL = 3Ω
VGS = 0 V
VDS = -15 V
f = 1.0 MHz
f=1.0 MHz
V
ns
nC
IS = -1.0 A, VGS= 0 V
IS = -5.0A, VGS=0V,
dl/dt= 100A/µs
V
V
S
nA
µA
mΩ
nC
ns
pF
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156℃/W when mounted on Min. copper pad.
28-Oct-2009 Rev. B
Page 1 of 3
STT6405
Elektronische Bauelemente
-5.0 A, -30 V, RDS(ON) 50 mΩ
Ω
P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
28-Oct-2009 Rev. B
Page 2 of 3
STT6405
Elektronische Bauelemente
-5.0 A, -30 V, RDS(ON) 50 mΩ
Ω
P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
28-Oct-2009 Rev. B
Page 3 of 3