SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications. FEATURES z z Capable of 2.5V gate drive Lower on-resistance PACKAGE DIMENSIONS A L Drain B C Top View Gate Source F G REF. K H E A B C D E F M J D (Typ.) Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current ,[email protected] ID @Ta=25℃ 5 A 3 ID @Ta=70℃ 4 A IDM 20 A PD @Ta=25℃ 1.38 W Tj, Tstg -55 ~ +150 ℃ 0.01 W/℃ Symbol Value Unit Rthj-a 90 ℃/W 3 Drain Current ,[email protected] 1, Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 01-June-2005 Rev. B 3 Max. Page 1 of 4 SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit BVDSS 30 - - V - 0.1 - V/℃ VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 13 - S VDS=5V, ID=5A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - - 30 - - 35 - - 50 - - 90 Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃) Static Drain-Source On-Resistance △ BVDSS /△Tj IDSS RDS(ON) Test Conditions VGS=0, ID=250uA Reference to 25℃, ID=1mA VGS=10V, ID=5A mΩ VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A Total Gate Charge2 Qg - 8.5 15 Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 3.2 - Td(on) - 6 - Tr - 20 - Td(off) - 20 - Tf - 3 - Input Capacitance Ciss - 660 1050 Output Capacitance Coss - 90 - Reverse Transfer Capacitance Crss - 70 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.2A, VGS=0 Reverse Recovery Time2 Trr - 14 - ns Reverse Recovery Charge Qrr - 7 - nC IS=5A, VGS=0V dI/dt=100A/us Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=5A VDS=16V VGS=4.5V ns VDS=15V ID=5A VGS=10V RG=3.3Ω RD=3Ω pF VGS=0V VDS=25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. 01-June-2005 Rev. B Page 2 of 4 SMG2306A Elektronische Bauelemente 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2005 Rev. B Page 3 of 4 SMG2306A Elektronische Bauelemente 01-June-2005 Rev. B 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET Page 4 of 4