S2N7002KT N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. PACKAGE INFORMATION REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±10 V ID 154 mA IDM 618 mA Continuous Source Current (Body Diode) ISD 154 mA Total Power Dissipation PD1 300 mW Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Continuous Drain Current Pulsed Drain Current tp≦10μs Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). DEVICE MARKING S2N7002KT = T6 09-Apr-2010 Rev. A Page 1 of 4 S2N7002KT N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Off Characteristics (Note2) Drain-Source Breakdown Voltage V(BR)DSS 30 - - V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±25 μA VGS= ±10V, VDS=0V V VDS=VGS, ID=100μA On Characteristics(Note2) Gate Threshold Voltage VGS(th) Static Drain-Source On Resistance RDS(ON) Forward transfer admittance gfs 0.5 1.0 1.5 - 1.4 7.0 - 2.3 7.5 - 80 - Ω VGS=4.5V, ID =154mA VGS=2.5V, ID =154mA mS VDS=3V, ID =154mA pF VDS=5V, VGS=0V, f=1MHz Dynamic Characteristics Input Capacitance Ciss - 11.5 - Output Capacitance Coss - 10 - Reverse Transfer Capacitance Crss - 3.5 - Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Td(ON)＊ - 13 - Tr - 15 - Td(OFF) - 98 - Tf - 60 - ＊ Fall Time nS VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω Source-Drain Diode Characteristics Input Capacitance ＊ VSD - 0.77 0.9 V VGS=0V, IS=0.154mA Pulse Test：pulse width ≦ 300μs, Duty cycle ≦ 2％ 09-Apr-2010 Rev. A Page 2 of 4 S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE 09-Apr-2010 Rev. A Page 3 of 4 S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE 09-Apr-2010 Rev. A Page 4 of 4