FDMA1032CZ 20V Complementary PowerTrench MOSFET

FDMA1032CZ
20V Complementary PowerTrench“ MOSFET
General Description
Features
This device is designed specifically as a single package
x Q1: N-Channel
„
3.7 A, 20V.
RDS(ON) = 68 m: @ VGS = 4.5V
solution for a DC/DC 'Switching' MOSFET in cellular
handset
and
other
ultra-portable
applications.
RDS(ON) = 86 m: @ VGS = 2.5V
It
x Q2: P-Channel
„
–3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.5V
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
RDS(ON) = 141 m: @ VGS = –2.5V
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
„
x Low profile – 0.8 mm maximum – in the new package
directly from the controlling device. The MicroFET 2x2
MicroFET 2x2 mm
package offers exceptional thermal performance for its
„ HBM ESD protection level >2kV (Note 3)
physical size and is well suited to switching applications.
„
x RoHS Compliant
„ Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1
D1
D2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
D2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Q1
Q2
Units
VDS
Drain-Source Voltage
Parameter
20
–20
V
VGS
Gate-Source Voltage
r12
±12
3.7
–3.1
V
A
Drain Current
ID
– Continuous
(Note 1a)
– Pulsed
PD
6
Power Dissipation for Single Operation
TJ, TSTG
–6
(Note 1a)
1.4
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
–55 to +150
W
qC
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
173 (Single Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
69 (Dual Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
032
FDMA1032CZ
7’’
8mm
3000 units
”2010 F airchild Semiconductor Corporation
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
July 2014
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
On Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
All
20
–20
VDS = VGS,
ID = 250 PA
VDS = VGS,
ID = –250 μA
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125qC
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125qC
VDS = 10 V,
ID = 3.7 A
VDS = –10 V,
ID = –3.1 A
Q1
Q2
Q1
Q2
Q1
0.6
–0.6
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
V
15
–12
mV/qC
1
–1
±10
PA
1.0
–1.0
–4
4
37
50
53
1.5
–1.5
V
68
86
90
m:
95
141
140
m:
Q1
Q2
60
88
87
16
–11
Q1
Q2
Q1
Q2
Q1
Q2
340
540
80
120
60
100
PA
(Note 2)
VGS(th)
Gate Threshold Voltage
'VGS(th)
'TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS
VGS = 0 V,
ID = 250 PA
ID = –250 PA
VGS = 0 V,
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
VDS = 16 V,
VGS = 0 V
VGS = 0 V
VDS = –16 V,
VGS = ±12 V,
VDS = 0 V
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Forward Transconductance
Q2
mV/qC
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
pF
pF
pF
(Note 2)
Q1
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 :
Q2
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :
Q1
VDS = 10 V, ID = 3.7 A, VGS = 4.5 V
Q2
VDS = –10 V,ID =– 3.1 A,
VGS =– 4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
13
8
11
14
37
3
36
4
7
0.7
1.1
1.1
2.4
16
24
16
20
26
59
6
58
6
10
ns
ns
ns
ns
nC
nC
nC
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Source-Drain Diode Forward Current
VSD
Source-Drain Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
trr
Qrr
(Note 2)
VGS = 0 V, IS = 1.1 A
(Note 2)
VGS = 0 V, IS = –1.1 A
Q1
IF = 3.7 A, dIF/dt = 100 A/μs
Q2
IF = –3.1 A, dIF/dt = 100 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.7
–0.8
11
25
2
9
1.1
–1.1
1.2
–1.2
A
V
ns
nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Electrical Characteristics
6
2
2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
VGS = 4.5V
ID, DRAIN CURRENT (A)
5
3.5V
3.0V
4
3
2
1
1.5V
0
0.2
0.4
0.6
0.8
VDS, DRAIN-SOURCE VOLTAGE (V)
1
1.4
2.5V
1.2
3.0V
3.5V
4.0V
1
1.2
0
Figure 1. On-Region Characteristics.
4.5V
1
2
3
4
ID, DRAIN CURRENT (A)
5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.13
1.6
ID = 3.7A
VGS = 4.5V
1.5
ID = 1.85A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
0.8
0
1.4
1.3
1.2
1.1
1
0.9
0.8
0.11
0.09
o
0.07
TA = 125 C
0.05
o
TA = 25 C
0.7
0.6
0.03
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
0
Figure 3. On-Resistance Variation with
Temperature.
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
5
4
3
2
o
TA = 125 C
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
6
ID, DRAIN CURRENT (A)
VGS = 2.0V
1.8
-55oC
1
o
VGS = 0V
10
1
0.1
TA = 125oC
0.01
o
25 C
o
0.001
-55 C
25 C
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Typical Characteristics Q1 (N-Channel)
10
500
VDS = 5V
VGS, GATE-SOURCE VOLTAGE (V)
ID = 3.7A
f = 1MHz
VGS = 0 V
15V
8
400
CAPACITANCE (pF)
10V
6
4
300
200
Coss
2
100
0
0
Crss
0
2
4
6
Qg, GATE CHARGE (nC)
8
10
0
Figure 7. Gate Charge Characteristics.
RDS(ON) LIMIT
100us
1ms
10ms
100ms
1s
10s
DC
1
VGS = 4.5V
SINGLE PULSE
RTJA = 173°C/W
TA = 25°C
0.1
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RTJA = 173°C/W
TA = 25°C
40
30
20
10
0.01
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
20
50
P(pk), PEAK TRANSIENT POWER (W)
10
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
Ciss
0
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Typical Characteristics Q1 (N-Channel)
6
2.6
VGS =
4 5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
-ID, DRAIN CURRENT (A)
5
3.5V
2.0V
3.0V
4
3
2
1
1.5V
0
1.8
-2.5V
1.4
-3.0V
-3.5V
1
0.4
0.8
1.2
1.6
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
0
Figure 12. On-Region Characteristics.
-4.5V
1
2
3
4
-ID, DRAIN CURRENT (A)
5
6
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
1.5
1.4
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.1A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
ID = -1.55A
0.16
0.12
o
TA = 125 C
0.08
o
TA = 25 C
0.04
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
0
Figure 14. On-Resistance Variation with
Temperature.
100
10
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
5
4
3
2
TA = 125oC
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
6
-ID, DRAIN CURRENT (A)
-4.0V
0.6
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.0V
2.2
-55oC
1
25oC
0
10
1
TA = 125oC
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Typical Characteristics: Q2 (P-Channel)
1000
f = 1MHz
VGS = 0 V
ID = -3.1A
800
8
VDS = -5V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-15V
6
-10V
4
600
Ciss
400
Coss
2
200
0
0
Crss
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
12
14
0
Figure 18. Gate Charge Characteristics.
20
Figure 19. Capacitance Characteristics.
50
10
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100
100us
1ms
10ms
100ms
1
10s
1s
DC
VGS = -4.5V
SINGLE PULSE
o
RTJA = 173 C/W
0.1
TA = 25oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RTJA = 173°C/W
TA = 25°C
40
30
20
10
0
0.0001
Figure 20. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 21. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Typical Characteristics: Q2 (P-Channel)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
Dimensional Outline and Pad Layout
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FDMA1032CZ Rev B5 (W)
tm
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Definition
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Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I68
FDMA1032CZ Rev B5 (W)
FDMA1032CZ 20V Complementary PowerTrench“ MOSFET
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