ROHM RF301B2S_11

Data Sheet
Fast Recovery Diode
RF301B2S
Applications
General rectification
Dimentions(Unit : mm)
Land size figure(Unit : mm)
6.0
6.0
1.6
1.6
Features
1)Power mold type(CPD)
2)Ultra Low VF
3)Very fast recovery
4)Low switching loss
CPD
3.0 2.0
2.3 2.3
Structure
Construction
Silicon epitaxial planar
(2)
ROHM : CPD
JEITA : SC-63
Manufacture Date
(1) (3)
Taping specifications(Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Bussiness frequencies, Rating of R-load, Tc=128C MAX.
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Symbol
VF
Reverse current
IR
Reverse recovery time
Thermal impedance
jc
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trr
Unit
V
V
A
A
°C
°C
200
200
3
40
150
55 to 150
Conditions
Min.
Typ.
Max.
Unit
-
0.87
10nA
0.93
10
V
μA
IF=3A
VR=200V
-
14
-
25
6
ns
C/W
IF=0.5A,IR=1A,Irr=0.25*I R
JUNCTION TO CASE
1/3
2011.05 - Rev.D
Data Sheet
RF301B2S
Electrical characteristics curves
10
10000
Ta=25C
Ta=-25C
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
1000
Ta=125C
0.1
100
Ta=125C
f=1MHz
Ta=150C
1
Ta=150C
Ta=75C
100
Ta=25C
10
Ta=-25C
1
0.1
0
0.001
0
870
860
AVE:859.4mV
80
70
60
50
40
30
AVE:4.60nA
20
130
120
110
100
90
AVE:99.4pF
80
70
10
60
0
50
Ct DISPERSION MAP
IR DISPERSION MAP
8.3ms
150
100
AVE:126.0A
50
0
REVERSE RECOVERY TIME:trr(ns)
1cyc
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:13.7ns
5
Ifsm
8.3ms 8.3ms
100
1cyc
10
1
0
1
IFSM DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
140
30
Ifsm
20
150
VF DISPERSION MAP
300
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25C
VR=200V
n=30pcs
90
840
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1
200
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
880
200
150
100
Ta=25C
IF=3A
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:V F(mV)
890
250
100
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
850
50
100 200 300 400 500 600 700 800 900 1000
PEAK SURGE
FORWARD CURRENT:I FSM(A)
0
10
trr DISPERSION MAP
2/3
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2011.05 - Rev.D
Data Sheet
RF301B2S
1000
5
100
Mounted on epoxy board
t
100
10
1
10
100
Rth(j-a)
10
Rth(j-c)
IM=100mA
1ms
tim
300us
0.1
0.001
0.1
TIME:t(ms)
IFSM-t CHARACTERISTICS
3
DC
2
1
0
10
0
1000
0V
t
7
6
DC
VR
D=t/T
VR=100V
T Tj=150C
5
4
D=1/2
3
2
Sin(=180)
1
2
3
4
5
30
9
0A
8
0V
VR
t
7
6
T
DC
D=t/T
VR=100V
Tj=150C
5
4
D=1/2
3
2
No break at 30kV
Io
Sin(=180)
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
8
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
10
9
Sin(=180)
TIME:t(s)
Rth-t CHARACTERISTICS
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
IF=1.5A
1
D=1/2
4
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT: IFSM(A)
Ifsm
20
15
10
5
1
0
0
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
0
25
50
75
100
125
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.05 - Rev.D
Notice
Notes
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R1120A