RENESAS RJM0407JSC

Preliminary Datasheet
RJM0407JSC
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type)
R07DS0368EJ0100
High Speed Power Switching
Rev.1.00
Sep 20, 2012
Features





For Automotive applications
AEC-Q101 compliant
N/P Channel MOS FET (6 in 1 Type). High density mounting
Low on-resistance
Capable of 4.5 V gate drive
Outline
RENESAS Package Code: PRSP0020DF-A
(Package Name: HSOP-20)
MOS6
Pch
MOS5
Pch
MOS4
Pch
19
S
14
S
11
S
20
G
17
G
12
G
D 3,18,21
2
G
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
D 5,6,15,16,22
7
G
D 8,13,23
10
G
S
1
S
4
S
9
MOS1
Nch
MOS2
Nch
MOS3
Nch
Page 1 of 11
RJM0407JSC
Preliminary
Pin Arrangement
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
21
Common Header
22
Common Header
23
Common Header
(Top View)
(Bottom View)
No.
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
1
2
3
4
5
6
7
8
9
10
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
MOS6
Pch
MOS5
Pch
MOS4
Pch
19
S
14
S
11
S
20
G
17
G
12
G
D 3,18,21
2
G
D 5,6,15,16,22
7
G
D 8,13,23
10
G
S
1
S
4
S
9
MOS1
Nch
MOS2
Nch
MOS3
Nch
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
Value
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
VDSS
VGSS
ID
ID (pulse) Note1
IAP Note3
EAR Note3
Pch Note2
Tch Note4
Tstg
40
20
20
80
15
30
35
175
–55 to +150
–40
20
–20
–80
–15
30
35
175
–55 to +150
Unit
V
V
A
A
A
mJ
W
C
C
Notes: 1. PW  10s duty cycle  1%
2. Tc = 25C : 1 Drive Operation
3. Tch = 25C, Rg  50 
4. AEC-Q101 compliant.
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 4.28C/W
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 2 of 11
RJM0407JSC
Preliminary
Electrical Characteristics
 MOS1, MOS2, MOS3 (N Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
RDS(on)
Min
—
—
1.0
—
Typ
—
—
—
17
Max
10
10
2.5
21
Unit
A
A
V
m
Test Conditions
VDS = 40 V, VGS = 0
VGS = 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A Note6, VGS = 10 V
RDS(on)
—
24
34
m
ID = 10 A Note6, VGS = 4.5 V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
—
—
—
—
—
—
—
—
630
255
185
16
2
6
9
14
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
VDS = 10V, VGS = 0,
f = 1 MHz
td(off)
tf
VDF
—
—
—
—
33
14
0.95
40
—
—
1.25
—
ns
ns
V
ns
trr
Body-drain diode reverse recovery
time
Note:
VDD = 25 V, VGS = 10 V,
ID = 20 A
VGS = 10 V, ID = 10 A,
VDD  30 V,RL = 3 ,
RG = 4.7 
IF = 20 A, VGS = 0 Note6
IF = 20 A, VGS = 0
diF/dt = 100 A/s
5. Pulse test
 MOS4, MOS5, MOS6 (P Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
RDS(on)
Min
—
—
–1.0
—
Typ
—
—
—
34
Max
–10
10
–2.5
42
Unit
A
A
V
m
Test Conditions
VDS = –40 V, VGS = 0
VGS = 20 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –10 A Note7, VGS = –10 V
RDS(on)
—
48
68
m
ID = –10 A Note7, VGS = –4.5 V
Ciss
Coss
—
—
920
360
—
—
pF
pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
—
—
—
260
22
3
8
19
32
32
14
–0.98
45
—
—
—
—
—
—
—
—
–1.27
—
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
trr
VDD = –25 V, VGS = –10 V,
ID = –20 A
VGS = –10 V, ID= –10 A,
VDD  –30 V, RL = 3 ,
RG = 4.7 
IF = –20 A, VGS = 0 Note7
IF = –20 A, VGS = 0
diF/dt = 100 A/s
7. Pulse test
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 3 of 11
RJM0407JSC
Preliminary
Main Characteristics
 MOS1, 2, 3 (Nch)
Typical Output Characteristics
Maximum Safe Operation Area
100
20
10
μs
10
m
Drain Current ID (A)
μs
1
s
Drain Current ID (A)
0
10
1
Operation
PW = 10 ms
in this area
0.1 is limited RDS(on)
0.01
DC Operation
16
10 V
4.5 V
4.0 V
3.5 V
Tc = 25°C
Pulse Test
12
3.0 V
8
4
Tc = 25°C
1 shot Pulse
0.001
0.1
VGS = 0 V
1
10
100
0
Drain to Source Voltage VDS (V)
Drain Current ID (A)
VDS = 10 V
Pulse Test
10
1
Tc = 175°C
0.1
25°C
−40°C
1
2
3
4
Static Drain to Source On State Resistance
RDS(on) (mΩ)
100
0.001
0
1000
Tc = 25°C
Pulse Test
100
VGS = 4.5 V
10 V
1
10
Drain Current ID (A)
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
8
10
50
100
ID = 10 A
Pulse Test
40
Tc = 175°C
30
20
25°C
10
0
−40°C
4
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source State On Resistance
vs. Drain Current
1
6
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
10
4
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
0.01
2
Static Drain to Source on State Resistance
vs. Temperature
50
ID = 10 A
Pulse Test
40
30
VSG = 4.5 V
20
10 V
10
0
−50
0
50
100
150
200
Case Temperature Tc (°C)
Page 4 of 11
RJM0407JSC
Preliminary
 MOS1, 2, 3(Nch)
Typical Capacitance vs.
Drain to Source Voltage
1000
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10000
Ciss
Coss
100
Crss
Tc = 25°C
VGS = 0
f = 1 MHz
50
10
20
30
VDS
12
8
10
4
VDD = 25 V
15 V
10 V
0
4
8
12
0
20
16
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
VDD = 25 V
15 V
10 V
20
30
20
Tc = 25°C
Pulse Test
15
10
10 V
VGS = 0 V, −5 V
5
0
VGS 16
40
10
0
20
Tc = 25°C
ID = 20 A
0.4
0.8
1.2
1.6
2.0
50
IAP = 15 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100 125 150 175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
VDS
Monitor
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
D. U. T
IAP
VDD
VDS
Vin
15 V
ID
50 Ω
0
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
VDD
Page 5 of 11
RJM0407JSC
Preliminary
 MOS1, 2, 3 (Nch)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
10%
tr
90%
td(off)
tf
Page 6 of 11
RJM0407JSC
Preliminary
 MOS4, 5, 6 (Pch)
Maximum Safe Operation Area
0
m
Drain Current ID (A)
μs
1
s
−1
−0.1
Operation
PW = 10 ms
in this area
is limited RDS(on)
−0.01
−4.0 V
μs
10
−10
Drain Current ID (A)
−20
10
−100
Typical Output Characteristics
DC Operation
−3.5 V
−4.5 V
−16
−10 V
−12
−3.0 V
−8
Tc = 25°C
Pulse Test
−4
Tc = 25°C
1 shot Pulse
−0.001
−0.1
VGS = 0 V
−1
−10
−100
Tc = 175°C
25°C
−0.01
−40°C
−1
−2
−3
−4
−5
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
−8
−10
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
−0.1
100
60
1000
Tc = 25°C
Pulse Test
VGS = −4.5 V
−10 V
10
1
−10
−1
Drain Current ID (A)
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
−100
Tc = 175°C
40
25°C
20
0
−40°C
−4
−8
−12
−16
−20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
vs. Drain Current
ID = −10 A
Pulse Test
80
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
−6
Typical Transfer Characteristics
−1
100
−4
Drain to Source Voltage VDS (V)
Pulse Test
VDS = −10 V
−0.001
0
−2
Drain to Source Voltage VDS (V)
−100
−10
0
Static Drain to Source on State Resistance
vs. Temperature
100
ID = −10 A
Pulse Test
80
VGS = −4.5 V
60
40
−10 V
20
0
−50
0
50
100
150
200
Case Temperature Tc (°C)
Page 7 of 11
RJM0407JSC
Preliminary
 MOS4, 5, 6 (Pch)
Typical Capacitance vs.
Drain to Source Voltage
f = 1 MHz
VGS = 0
Ciss
1000
Coss
Crss
100
10
0
–10
–20
–30
VDD = –25 V
–10 V
–5 V
VDS
–30
–12
–16
–40
–50
0
Tc = 25°C
ID = –20 A
–20
5
10
15
20
25
Avalanche Energy vs.
Channel Temperature Derating
–15
–10 V
VGS = 0 V, 5 V
–5
–0.4
–0.8
–1.2
–1.6
–2.0
50
IAP = –15 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100 125 150 175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
VDS
Monitor
–8
VGS
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
–20
–4
Gate Charge Qg (nc)
Tc = 25°C
Pulse Test
0
–10
Drain to Source Voltage VDS (V)
–20
–10
0
VDD = –25 V
–10 V
–5 V
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
10000
Capacitance C (pF)
Dynamic Input Characteristics
0
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
D. U. T
VDD
IAP
VDS
Vin
–15 V
50 Ω
ID
0
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
VDD
Page 8 of 11
RJM0407JSC
Preliminary
 MOS4, 5, 6 (Pch)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Switching Time Waveform
Vin
10%
D.U.T.
Rg
Vin
–10 V
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
RL
90%
VDD
= –30 V
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
Page 9 of 11
RJM0407JSC
Preliminary
 Common
Power vs. Temperature Derating
Pch (W)
50
Channel Dissipation
40
30
20
10
0
50
100
Normalized Transient Thermal Impedance γs (t)
Case Temperature
150
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.2
0.1
0.1
5
0.0
θch - c(t) = γs (t) x θch - c
θch - c = 4.28°C/W, Tc = 25°C
1 Drive operation
0.02
PDM
D=
0.01
PW
T
PW
1shot pulse
0.01
10 μ
100 μ
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 10 of 11
RJM0407JSC
Preliminary
Package Dimensions
JEITA Package Code
P-HSOP20-11x14.1-1.27
RENESAS Code
PRSP0020DF-A
15.9
*1
Previous Code
⎯
MASS[Typ.]
2.0g
NOTE)
1. DIMENSIONS"*1"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
12.1
±0.1
1.38
D
1.38
F
2.98
2.98
7.3
7.0
HE
*2
E
±0.15
11
8.2
20
Index mark
1
Z
10
e
*3
bp
Reference
Symbol
BOTTOM VIEW
x
M
bp
θ
0.2
1.28
1.26
A1
c
c1
A
3.35
1.71
b1
L
y
Terminal cross section
Detail F
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min Nom Max
13.95 14.1 14.25
10.9 11.0 11.1
0.01 0.05 0.10
3.6
0.40 0.47 0.53
0.45
0.28 0.32 0.37
0.30
0°
8°
14.0 14.2 14.4
1.27
0.25
0.1
1.8
0.65 0.8 0.95
Ordering Information
Orderable Part Number
RJM0407JSC-00-12
Note:
Quantity
700 pcs
Shipping Container
Tray
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 11 of 11
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2