SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A 0.2 W . PCM Power Dissipation (Tamb=25°C) TJ Junction Temperature -55 to +150 ℃ Tstg Storage Temperature -55 to +150 ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT-323(SC-70) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Sy mbol Parame te r Te st conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 μ A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μ A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE (1) VCE= -1V, IC= -100mA 120 hFE (2) VCE= -1V, IC= -800mA 40 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800 mA, IB= -80mA -1.2 V fT Transition frequency VCE= -10V, IC= -50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank Range L H 120-200 200-350 DEVICE MARKING SS8550W=Y2 WEITRON http://www.weitron.com.tw 1/2 10-Jun-2011 SS8550W SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 2/2 Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 10-Jun-2011