THINKISEMI 2SC2073

2SA940
®
Pb
2SA940
Pb Free Plating Product
PNP Silicon Epitaxial Power Transistor
FEATURES
Vertical Output Applications.
13.08±0.20
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
3
12
TO-220C
1.27±0.20
1.52±0.20
1.30±0.20
9.19±0.20
z
2.80±0.20
Power Amplifier Applications.
15.70±0.20
APPLICATIONS
4.50±0.20
20
6.50±0.20
φ
Complements the 2SC2073.
z
0.
±
60
3.
2.40±0.20
3.02±0.20
z
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
Package Dimension
Dimensions in Millimeters
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1.5
A
IB
Base Current
-0.5
A
PC
Tj,Tstg
Collector Dissipation
Junction and Storage Temperature
Ta=25℃
Tc=25℃
1.5
W
25
-55 to +150
℃
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA940
®
ELECTRICAL CHARACTERISTICS Ratings at 25℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Test conditions
MIN
Collector-base Breakdown Voltage
V(BR)CBO
IC=-100μA,IE=0
-150
V
Collector-emitter Breakdown Voltage
V(BR)CEO
IC=-1mA,IB=0
-150
V
Emitter-base Breakdown Voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-120V,IE=0
-10
μA
Emitter Cut-off Current
IEBO
VEB=-5V,IC=0
-10
μA
DC Current Gain
hFE
VCE=-10V,IC=-500mA
Collector-emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
Base-emitter Voltage
VBE(on)
VCE=-10V,IB=-500mA
Transition Frequency
fT
VCE=-10V, IC=-0.5A
4
MHz
Collector Output Capacitance
Cob
VCB=-10V,IE=0,f=1MHz
55
pF
TYP
40
-0.65
MAX
UNIT
140
-0.75
-1.5
V
-0.85
V
Page 2/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA940
®
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Page 3/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/