CO-PAK IGBT SGF40N60UFD FEATURES TO-3PF * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast C G E ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ Tc = 25°C 40 A Collector Current @ Tc = 100°C 20 A ICM (1) Pulsed Collector Current 160 A IF Diode Continuous Forward Current @ Tc = 100°C 15 A IFM Diode Maximum Forward Current 160 A PD Maximum Power Dissipation @Tc = 25°C 96 W Maximum Power Dissipation @Tc = 100°C 38 W Symbol Characteristics VCES Tj Operating Junction Temperature -55 ~ 150 °C Tstg Storage Temperature Range -55 ~ 150 °C TL Maximum Lead Temp. For Soldering 300 °C Purposes, 1/8” from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature Rev.B 1999 Fairchild Semiconductor Corporation CO-PAK IGBT SGF40N60UFD ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA 600 - - V ∆VCES/ Temperature Coeff. of VGE = 0V , IC = 1mA - 0.6 - V/°C ∆TJ Breakdown Voltage VGE(th) G - E threshold voltage IC = 20mA , VCE = VGE 4.5 5.5 7.5 V ICES Collector cutoff Current VCE = VCES , VGE = 0V - - 250 uA IGES G - E leakage Current VGE = VGES , VCE = 0V - - 100 nA VCE(sat) Collector to Emitter Ic=20A, VGE = 15V - 2.0 2.6 V saturation voltage Ic=40A, VGE = 15V - 2.6 - V Cies Input capacitance VGE = 0V , f = 1MHz - 1430 - pF Coes Output capacitance VCE = 30V - 168 - pF Cres Reverse transfer capacitance - 50 - pF td(on) Turn on delay time VCC = 300V , IC = 20A - 12 - ns tr Turn on rise time VGE = 15V - 20 - ns td(off) Turn off delay time RG = 10Ω - 68 100 ns tf Turn off fall time Inductive Load - 50 100 ns Eon Turn on Switching Loss - 0.08 - mJ Eoff Turn off Switching Loss - 0.19 - mJ Ets Total Switching Loss - 0.27 0.47 mJ Qg Total Gate Charge Vcc = 300V - 92 138 nC Qge Gate-Emitter Charge VGE = 15V - 21 31 nC Qgc Gate-Collector Charge Ic = 20A - 28 42 nC Le Internal Emitter Inductance Measured 5mm from PKG - 14 - nH SGF40N60UFD CO-PAK IGBT ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol VFM Trr Irr Qrr Characteristics Test Conditions Min Min Typ Max Units Tc =25°C - 1.4 1.7 Tc =100°C - 1.3 - Diode Reverse Tc =25°C - 42 60 Recovery Time Tc =10 °C - 74 - Diode Peak Reverse IF=15A, VR=200V Tc =25°C - 4.0 6.0 Recovery Current -di/dt=200A/uS Tc =10 °C - 6.5 - Diode Reverse Tc =25°C - 80 180 Recovery Charge Tc =100°C - 220 - Diode Forward Voltage IF=15A V nS A nC THERMAL RESISTANCE Symbol Characteristics Min Typ Max Units RθJC Junction-to-Case (IGBT) - - 1.3 °C/W RθJC Junction-to-Case (DIODE) - - 2.5 °C/W RθJA Junction-to-Ambient - - 45 °C/W CO-PAK IGBT SGF40N60UFD 32 200 Vcc = 300V Load Current : peak of square wave 24 150 & Ic [A] Load Current [A] Tc = 25 16 8 & Tc = 100 100 50 Duty cycle : 50% Tc = 100 Power Dissipation = 32W & 0 0.1 0 1 10 100 1000 0 2 4 Fig.1 Typical Load Current vs. Frequency 50 6 8 10 Vce [V] Frequency [kHz] Fig.2 Typical Output Characteristics 3.2 Vge = 15V 45 3.0 Ic = 48A 40 2.8 2.6 30 Vce(sat) [V] Max DC Current [A] 35 25 20 2.4 2.2 Ic = 30A 15 2.0 10 1.8 5 1.6 0 25 50 75 &] 100 125 Tc [ Fig.3 Maximum Collector Current vs. Case Temperature 150 20 40 60 80 &] 100 120 140 Tc [ Fig.4 Collector to Emitter Voltage vs. Case Temperature CO-PAK IGBT SGF40N60UFD 7KHUPDO5HVSRQVH >=WKMF@ Pdm t1 t2 VLQJOH SXOVH ( Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc ( ( 5HFWDQJXODU3XOVH 'XUDWLRQ >VHF@ Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case 2500 18 Vcc = 300V Ic = 20A 16 2000 14 Cies 1500 VGE [V] Capacitance [pF] 12 10 8 1000 6 4 500 Coes 2 Cres 0 0 1 10 Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage 0 20 40 60 Qg [nC] Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage 80 CO-PAK IGBT SGF40N60UFD 1000 2.0 Vcc = 300V Ic = 20A Vcc = 300V Rg = 10Ω Vge = 15V Esw 800 1.6 Ic = 40A Eon Energy [mJ] Energy [uJ] 600 400 1.2 0.8 Eoff Ic = 20A 200 0.4 Ic = 10A 0 0 20 40 +] 0.0 60 80 100 20 &] 40 60 Rg [ 80 100 Tc [ Fig.9 Typical Switching Loss vs. Case Temperature Fig.8 Typical Switching Loss vs. Gate Resistance 1.6 Vcc = 300V Rg =10Ω Tc = 100 & 1.4 Esw 1.2 100 Eoff Ic [A] Energy [mJ] 1.0 0.8 0.6 10 Eon 0.4 & Safe Operating Area Vge = 20V, Tc = 100 0.2 0.0 1 10 15 20 25 30 35 Ic [A] Fig.10 Typical Switching loss vs. Collector to Emitter Current 40 1 10 100 Vce [V] Fig.11 Turn-off SOA 1000 CO-PAK IGBT SGF40N60UFD 100 100 VR = 200V IF = 15A & Tc = 100 & Tc = 100 & Tc = 25 Trr [ns] Forward Current IF [A] 80 10 60 & Tc = 25 40 1 0.0 0.5 1.0 1.5 2.0 2.5 100 1000 -di/dt [A/us] Forward Voltage Drop V F [V] Fig.12 Typical Forward Voltage Drop vs. Forward Current Fig.13 Typical Reverse Recovery Time vs. di/dt 100 800 VR = 200V VR = 200V IF = 15A 700 IF = 15A 600 & 500 10 & Tc = 100 & Tc = 25 Qrr [ns] I rr - [A] Tc = 100 400 300 200 & Tc = 25 100 1 100 -di/dt [A/us] 1000 Fig.14 Typical Reverse Recovery Current vs. di/dt 0 100 1000 -di/dt [A/us] Fig.15 Typical Stored Charge vs. di/dt TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or © whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. LIFE SUPPORT POLICY Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later data. 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