FAIRCHILD SGH13N60UFD

N-CHANNEL IGBT
SGH13N60UFD
FEATURES
TO-3P
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
C
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Units
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current @ Tc = 25°C
13
A
Collector Current @ Tc = 100°C
6.5
A
ICM (1)
Pulsed Collector Current
52
A
IF
Diode Continuous Forward Current @ Tc = 100°C
8
A
IFM
Diode Maximum Forward Current
56
A
PD
Maximum Power Dissipation @Tc = 25°C
60
W
Maximum Power Dissipation @Tc = 100°C
25
W
Symbol
Characteristics
VCES
Tj
Operating Junction Temperature
-55 ~ 150
°C
Tstg
Storage Temperature Range
-55 ~ 150
°C
TL
Maximum Lead Temp. For Soldering
300
°C
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
1999 Fairchild Semiconductor Corporation
N-CHANNEL IGBT
SGH13N60UFD
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25°C,Unless Otherwise Specified)
Symbol
Characteristics
Test Conditions
Min
Typ Max
Units
BVCES
C - E Breakdown Voltage
VGE = 0V , IC = 250uA
600
-
-
V
∆VCES/
Temperature Coeff. of
VGE = 0V , IC = 1mA
-
0.6
-
V/°C
∆TJ
Breakdown Voltage
VGE(th)
G - E threshold voltage
IC = 6.5mA , VCE = VGE
4.0
5.5
7.5
V
ICES
Collector cutoff Current
VCE = VCES , VGE = 0V
-
-
250
uA
IGES
G - E leakage Current
VGE = VGES , VCE = 0V
-
-
100
nA
VCE(sat)
Collector to Emitter
Ic=6.5A, VGE = 15V
-
1.95
2.6
V
saturation voltage
Ic=13A, VGE = 15V
-
2.6
-
V
Cies
Input capacitance
VGE = 0V , f = 1MHz
-
375
-
pF
Coes
Output capacitance
VCE = 30V
-
63
-
pF
Cres
Reverse transfer capacitance
-
13
-
pF
td(on)
Turn on delay time
VCC = 300V , IC = 6.5A
-
15
-
nS
tr
Turn on rise time
VGE = 15V
-
26
-
nS
td(off)
Turn off delay time
RG = 50Ω
-
50
80
nS
tf
Turn off fall time
Inductive Load
-
110
220
nS
Eon
Turn on Switching Loss
-
0.1
-
mJ
Eoff
Turn off Switching Loss
-
0.1
-
mJ
Ets
Total Switching Loss
-
0.2
0.3
mJ
Qg
Total Gate Charge
Vcc = 300V
-
25
37
nC
Qge
Gate-Emitter Charge
VGE = 15V
-
7
11
nC
Qgc
Gate-Collector Charge
Ic = 6.5A
-
8
12
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
-
14
-
nH
SGH13N60UFD
N-CHANNEL IGBT
ELECTRICAL CHARACTERISTICS (DIODE PART)
(Tc=25°C,Unless Otherwise Specified)
Symbol
VFM
Trr
Irr
Qrr
Characteristics
Test Conditions
Min
Min Typ
Max Units
Tc =25°C
-
1.4
1.7
Tc =100°C
-
1.3
-
Diode Reverse
Tc =25°C
-
37
55
Recovery Time
Tc =100°C
-
55
-
Diode Forward Voltage
IF=8.0A
Diode Peak Reverse
IF=8.0A, VR=200V
Tc =25°C
-
3.5
5.0
Recovery Current
-di/dt=200A/uS
Tc =100°C
-
4.5
-
Diode Reverse
Tc =25°C
-
65
138
Recovery Charge
Tc =100°C
-
124
-
V
nS
A
nC
THERMAL RESISTANCE
Symbol
Characteristics
Min
Typ
Max
Units
RθJC
Junction-to-Case (IGBT)
-
-
2.0
°C/W
RθJC
Junction-to-Case (DIODE)
-
-
3.5
°C/W
RθJA
Junction-to-Ambient
-
-
40
°C/W
RθCS
Case-to-Sink
-
0.24
-
°C/W
N-CHANNEL IGBT
SGH13N60UFD
12
50
Vcc = 300V
Load Current : peak of square wave
40
&
9
Tc = 25
&
Load Current [A]
Tc = 100
Ic [A]
30
6
20
3
10
Duty cycle : 50%
Tc = 100
Power Dissipation = 14W
&
0
0.1
0
1
10
100
1000
0
2
4
Fig.1 Typical Load Current vs. Frequency
14
6
8
10
Vce [V]
Frequency [kHz]
Fig.2 Typical Output Characteristics
3.2
Vge = 15V
Ic = 13A
3.0
12
2.8
2.6
Vce(sat) [V]
Max DC Current [A]
10
8
6
2.4
2.2
4
Ic = 6.5A
2.0
2
1.8
1.6
0
25
50
75
&
100
125
Tc [ ]
Fig.3 Maximum Collector Current vs.
Case Temperature
150
20
40
60
80
&]
100
120
140
Tc [
Fig.4 Collector to Emitter Voltage vs.
Case Temperature
N-CHANNEL IGBT
SGH13N60UFD
T hermal Response [Zthjc]
10
0 .5
1
0 .2
0 .1
0 .0 5
Pdm
0 .1
t1
0 .0 2
t2
0 .0 1
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
s ingle puls e
0 .0 1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
600
18
Vcc = 300V
Ic = 6.5A
16
500
14
Cies
12
V GE [V]
Capacitance [pF]
400
300
200
10
8
6
Coes
4
100
2
Cres
0
0
1
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
0
5
10
15
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
20
25
N-CHANNEL IGBT
SGH13N60UFD
1.8
500
Vcc = 300V
Ic = 6.5A
Vcc = 300V
Rg =50Ω
Vge = 15V
1.6
Ic =13A
Esw
400
1.4
Energy [mJ]
Energy [uJ]
1.2
300
Eon
200
1.0
0.8
Ic = 6.5A
0.6
Eoff
0.4
100
Ic = 3A
0.2
0
0
+]
100
200
0.0
300
400
20
&]
40
60
80
100
Tc [
Rg [
Fig.9 Typical Switching Loss vs.
Case Temperature
Fig.8 Typical Switching Loss vs.
Gate Resistance
0.7
100
Vcc = 300V
Rg =50Ω
Tc = 100
&
0.6
Esw
0.4
Ic [A]
Energy [mJ]
0.5
Eoff
10
0.3
Eon
0.2
0.1
&
Safe Operating Area
Vge = 20V, Tc = 100
0.0
1
4
6
8
10
Ic [A]
Fig.10 Typical Switching loss vs.
Collector to Emitter Current
12
1
10
100
Vce [V]
Fig.11 Turn-off SOA
1000
N-CHANNEL IGBT
SGH13N60UFD
100
100
VR = 200V
IF = 8A
10
&
60
Tc = 100
Trr [ns]
Forward Current IF [A]
80
&
&
Tc = 100
40
Tc = 25
&
1
Tc = 25
20
0.1
0
1
2
100
3
1000
-di/dt [A/us]
Forward Voltage Drop V F [V]
Fig.12 Typical Forward Voltage Drop
vs. Forward Current
Fig.13 Typical Reverse Recovery Time
vs. di/dt
100
500
VR=200V
VR = 200V
IF=8A
IF = 8A
450
400
350
&
&
Tc = 100
Qrr [nC]
I rr - [A]
Tc=100
300
10
250
200
&
Tc = 25
&
Tc=25
150
100
50
1
100
-di/dt [A/us]
1000
Fig.14 Typical Reverse Recovery Current
vs. di/dt
0
100
-di/dt [A/us]
Fig.15 Typical Stored Charge vs. di/dt
1000
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life
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support device or system whose failure to perform can be
systems which, (a) are intended for surgical implant
reasonably expected to cause the failure of the life support
into the body, or (b) support or sustain life, or © whose
device or system, or to affect its safety or effectiveness.
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
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Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without
notice.
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First Production
This datasheet contains preliminary data, and supplementary data
will be published at a later data.
Fairchild Semiconductor reserves the right to make changes at any
time without notices in order to improve design.
No Identification Needed
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This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice in
order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.