Switching Definitions INPUT BOOST MOSFET+IGBT

10-FZ06NBA084FP-M306L48
preliminary datasheet
Switching Definitions INPUT BOOST MOSFET+IGBT
General conditions
= 125 °C
Tj
= 4Ω
Rgon IGBT
Rgoff IGBT
= 4Ω
INPUT BOOST MOSFET+IGBT
Figure 1
MOSFET turn off delayed by 100ns
INPUT BOOST MOSFET+IGBT
Figure 2
Turn-off Switching Waveforms & definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon
(tEon = integrating time for Eon)
160
160
140
140
IC
120
120
tdoff
100
VCE
VGE 90%
100
VCE 90%
80
%
60
%
80
IC
40
IC 1%
40
20
VCE
0
VGE
tdon
60
tEoff
20
VGE10%
VGE
-20
VCE3%
Ic10%
0
tEon
-40
-20
0,1
0,18
0,26
0,34
0,42
0,5
2,9
time (us)
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdoff =
tEoff =
0
15
350
77
0,12
0,25
2,95
3
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdon =
tEon =
V
V
V
A
μs
μs
INPUT BOOST MOSFET+IGBT
Figure 3
time(us)
0
15
350
77
0,02
0,10
3,1
3,15
V
V
V
A
μs
μs
INPUT BOOST MOSFET+IGBT
Figure 4
Turn-off Switching Waveforms & definition of tf
3,05
Turn-on Switching Waveforms & definition of tr
160
180
140
160
Ic
120
IC
140
VCE
fitted
100
120
VCE
IC 90%
80
%
60
100
IC90%
% 80
IC 60%
tr
40
60
IC 40%
40
20
20
IC10%
0
-20
0,25
IC10%
tf
0,275
VC (100%) =
IC (100%) =
tf =
copyright by Vincotech
0,3
350
77
0,007
0
0,325
time (us)
0,35
0,375
-20
2,98
0,4
VC (100%) =
IC (100%) =
tr =
V
A
μs
1
3
3,02
350
77
0,007
3,04
time(us) 3,06
V
A
μs
Revision: 2
10-FZ06NBA084FP-M306L48
preliminary datasheet
Switching Definitions INPUT BOOST MOSFET+IGBT
INPUT BOOST MOSFET+IGBT
Figure 5
INPUT BOOST MOSFET+IGBT
Figure 6
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
120
%
%
Eoff
100
100
Poff
Eon
80
80
60
60
40
40
20
20
0
0
Pon
VCE3%
VGE10%
tEon
tEoff
VGE90%
IC 1%
-20
2,95
-20
0,1
0,2
Poff (100%) =
Eoff (100%) =
tEoff =
0,3
time (us)
27,11
0,84
0,25
0,4
0,5
Pon (100%) =
Eon (100%) =
tEon =
kW
mJ
μs
INPUT BOOST MOSFET+IGBT
Figure 7
2,98
3,01
3,04
3,07
time(us)
27,11
0,29
0,10
3,13
3,16
kW
mJ
μs
INPUT BOOST MOSFET+IGBT
Figure 8
Turn-off Switching Waveforms & definition of trr
3,1
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
120
275
Id
80
Qrr
225
trr
40
175
Vd
0
fitted
125
IRRM10%
%
Id
%
-40
IRRM90%
75
tQrr
IRRM100%
-80
25
-120
-25
-160
3
3,01
Vd (100%) =
Id (100%) =
IRRM (100%) =
trr =
copyright by Vincotech
3,02
350
77
-43
0,012
3,03
time(us)
3,04
3,05
-75
2,98
3,06
Id (100%) =
Qrr (100%) =
tQrr =
V
A
A
μs
2
3,02
77
0,60
0,02
time(us)
3,06
3,1
A
μC
μs
Revision: 2
10-FZ06NBA084FP-M306L48
preliminary datasheet
DC Boost Application
flowBoost0
600V/84A PS*
General conditions
BOOST
=
=
=
=
VGEon
VGEoff
Rgon
Rgoff
Figure 1.
IGBT+MOSFET
15 V
0V
4Ω
4Ω
Figure 2.
Typical average static loss as a function of
input current IiRMS
Ploss=f(Iin)
FWD
Typical average static loss as a function of
input current IiRMS
Ploss=f(Iin)
140
Ploss (W)
Ploss (W)
180
160
120
Vin/Vout=0,2
140
Vin/Vout=1
100
120
80
100
80
60
60
40
40
20
20
Vin/Vout=1
Vin/Vout=0,2
0
0
0
10
20
30
40
50
60
Conditions:
Tj=
125
°C
Ratio of input DC voltage to output DC voltage
parameter: Vin/Vout
from
0,2
in
0,2
Figure 3.
0
70 Iin (A) 80
10
20
30
40
50
Conditions:
Tj=
125
°C
Ratio of input DC voltage to output DC voltage
parameter: Vin/Vout
from
0,2
in
0,2
Figure 4.
to
1,0
steps
IGBT+MOSFET
Typical average switching loss as a function of
input current
Ploss=f(Iin)
70 Iin (A) 80
60
to
steps
1,0
FWD
Typical average switching loss as a function of
input current
Ploss=f(Iin)
18,0
Ploss (W)
Ploss (W)
160,0
16,0
140,0
fsw="to" kHz
14,0
120,0
fsw="to"kHz
fsw="to" kHz
12,0
100,0
10,0
80,0
8,0
60,0
6,0
40,0
4,0
20,0
2,0
fsw="from" kHz
fsw="from" kHz
0,0
0
Conditions:
Sw. freq.
10
20
30
Tj=
125
Vout =
350
fsw from
16
in steps of factor 2
copyright by Vincotech
40
50
60
70
Iin (A)
0,0
80
0
°C
V
Conditions:
kHz to
128
kHz
Sw. freq.
3
10
20
30
Tj=
125
Vout =
350
fsw from
16
in steps of factor 2
40
50
60
70 Iin (A) 80
°C
V
kHz to
128
kHz
Revision: 2
10-FZ06NBA084FP-M306L48
preliminary datasheet
DC Boost Application
flowBoost0
Figure 5.
per PHASE
600V/84A PS*
Figure 6.
Typical available input current as a function of
Vin/Vout
Iin=f(Vin/Vout)
per PHASE
Typical available input current as a function of
switching frequency
Iin=f(fsw)
70
Iin (A)
Iin (A)
70
Th=60°C
60
60
50
50
40
Th=60°C
40
Th=100°C
Th=100°C
30
30
20
20
10
10
0
0,1
0,2
Conditions:
DC link=
parameter:
0,3
350
0,4
0,5
0,6
Tj= Tjmax-25°C
V
Heatsink temp.
Th from
in
0,7
fsw=
0,8
50
0
0,9
1,0
Vin/Vout
1
10
Conditions:
DC link=
kHz
parameter:
60
10
°C to
°C
100
steps
Figure 7.
°C
per PHASE
Tj= Tjmax-25°C
V
Heatsink temp.
Th from
in
Vin
60
10
°C to
°C
fsw (kHz)
250
V
100
steps
°C
Figure 8.
Typical available input current as a function of
fsw and Vin/Vout
Iin=f(fsw,Vin/Vout)
1000
per PHASE
Typical available electric input power as a function
of heatsink temperature
Pin=f(Th)
0,10
18,0
Pin (kW)
Iin (A)
350
100
0,20
16,0
"from" kHz
60,0-65,0
14,0
0,30
55,0-60,0
50,0-55,0
12,0
45,0-50,0
35,0-40,0
30,0-35,0
0,50
Vin/Vout
0,40
40,0-45,0
10,0
25,0-30,0
8,0
20,0-25,0
0,60
15,0-20,0
to" kHz
6,0
10,0-15,0
5,0-10,0
0,70
0,0-5,0
4,0
0,80
2,0
8
16
32
64
128
0,90
256
0,0
60
65
70
75
80
85
90
fsw (kHz)
Conditions:
Tj= Tjmax-25°C
DC link=
Th=
copyright by Vincotech
Conditions:
350 V
80 °C
Vin
Sw. freq.
4
95
100
Th ( o C)
Tj= Tjmax-25°C
250 V
fsw from
16
DC link=
kHz to
350 V
128
kHz
Revision: 2
10-FZ06NBA084FP-M306L48
preliminary datasheet
DC Boost Application
flowBoost0
Figure 9.
600V/84A PS*
per PHASE
efficiency (%)
Typical efficiency as a function of
input power
η=f(Pin)
100,0
99,5
"from" kHz
99,0
98,5
"to" kHz
98,0
97,5
97,0
96,5
96,0
95,5
95,0
0
2
4
6
8
Conditions:
Tj= Tjmax-25°C
Vin
parameter:
250 V
Sw. freq.
fsw from
copyright by Vincotech
16
10
12
14
16
18
20
P in (kW)
DC link=
350 V
kHz to
128 kHz
5
Revision: 2