CEN7002A

CEN7002A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V.
RDS(ON) = 4 Ω @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-23-T package.
CEN7002A
SOT-23-T
G
D
S
G
Die upside up
package.
ABSOLUTE MAXIMUM RATINGS
SOT-23-T
S
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
60
Units
V
Gate-Source Voltage
VGS
±20
V
ID
0.25
A
IDM
1.3
A
PD
0.35
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
350
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
2004.December
http://www.cetsemi.com
7 - 30
CEN7002A
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
60
1
µA
V
Gate Body Leakage Current, Forward
IGSSF
VGS = 16V, VDS = 0V
0.1
µA
Gate Body Leakage Current, Reverse
IGSSR
VGS = -16V, VDS = 0V
-0.1
µA
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = 250µA
2.5
V
VGS = 10V, ID = 0.25A
1
1.2
3
Ω
VGS = 4.5V, ID = 0.2A
1.8
4
Ω
VDS = 15V, ID = 0.2A
0.6
S
VDS = 5V, VGS = 0V,
f = 1.0 MHz
30
pF
6.5
pF
2.1
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics d
Turn-On Time
td(on)
Turn-Off Time
td(off)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD = 10V, ID = 0.25A,
VGS = 10V, RGEN = 10Ω
VDS = 15V, ID = 0.25A,
VGS = 4.5V
9
15
ns
21
26
ns
0.6
0.7
nC
0.1
nC
0.08
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 0.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7 - 31
0.8
A
1.2
V
7
CEN7002A
1.0
1.2
25 C
0.8
VGS=5V
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,7,6V
0.6
VGS=4V
0.4
0.2
0.9
0.6
0.3
TJ=125 C
VGS=3V
0.0
0.0
0
1
2
3
4
5
0
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
50
40
Ciss
30
20
Coss
10
Crss
0
2
4
6
8
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
ID=0.25A
VGS=10V
VDS, Drain-to-Source Voltage (V)
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
0
1.2
6
4
2
VDS, Drain-to-Source Voltage (V)
60
1.3
-55 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
7 - 32
10
5 V =15V
DS
ID=0.25A
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEN7002A
3
2
1
0
0.0
10
10
10
10
0.2
0.4
0.6
0.8
1
0
RDS(ON)Limit
1ms
10ms
100ms
1s
DC
-1
-2
TA=25 C
TJ=150 C
Single Pulse
-3
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0.02
10
Single Pulse
-2
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
7 - 33
10
1
10
2
2
7