Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 TXB0108 8-Bit Bidirectional Voltage-Level Translator with Auto-Direction Sensing and ±15-kV ESD Protection 1 Features 3 Description • This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB. 1 • • • • • • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V on B Port (VCCA ≤ VCCB) VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State OE Input Circuit Referenced to VCCA Low Power Consumption, 4-μA Max ICC Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – A Port – 2000-V Human-Body Model (A114-B) – 1000-V Charged-Device Model (C101) – B Port – ±15-kV Human-Body Model (A114-B) – ±8-kV Human-Body Model (A114-B) (YZP Package Only) – 1000-V Charged-Device Model (C101) When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The TXB0108 is designed so that the OE input circuit is supplied by VCCA. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. 2 Applications • • • • Handset Smartphone Tablet Desktop PC Device Information(1) PART NUMBER TXB0108 PACKAGE BODY SIZE (NOM) TVSOP (20) 5.00 mm x 4.40 mm SON (20) 2.00 mm x 4.00 mm BGA MICROSTAR JUNIOR (20) 2.50 mm x 3.00 mm TSSOP (20) 6.50 mm x 4.40 mm VQFN (20) 4.50 mm x 3.50 mm DSGBA (20) 1.90 mm x 2.40 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application Block Diagram for TXB010X 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 5 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6.14 6.15 5 5 5 6 6 7 7 7 7 7 7 8 8 8 9 Absolute Maximum Ratings ..................................... Handling Ratings....................................................... Recommended Operating Conditions ...................... Thermal Information .................................................. Electrical Characteristics .......................................... Timing Requirements: VCCA = 1.2 V ......................... Timing Requirements: VCCA = 1.5 V ± 0.1 V ............ Timing Requirements: VCCA = 1.8 V ± 0.15 V .......... Timing Requirements: VCCA = 2.5 V ± 0.2 V ............ Timing Requirements: VCCA = 3.3 V ± 0.3 V .......... Switching Characteristics: VCCA = 1.2 V ................. Switching Characteristics: VCCA = 1.5 V ± 0.1 V .... Switching Characteristics: VCCA = 1.8 V ± 0.15 V .. Switching Characteristics: VCCA = 2.5 V ± 0.2 V .... Switching Characteristics: VCCA = 3.3 V ± 0.3 V .... 6.16 Operating Characteristics........................................ 9 6.17 Typical Characteristics .......................................... 10 7 8 Parameter Measurement Information ................ 11 Detailed Description ............................................ 12 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 12 12 13 14 Application and Implementation ........................ 15 9.1 Application Information............................................ 15 9.2 Typical Application ................................................. 15 10 Power Supply Recommendations ..................... 17 11 Layout................................................................... 17 11.1 Layout Guidelines ................................................. 17 11.2 Layout Example .................................................... 17 12 Device and Documentation Support ................. 18 12.1 Trademarks ........................................................... 18 12.2 Electrostatic Discharge Caution ............................ 18 12.3 Glossary ................................................................ 18 13 Mechanical, Packaging, and Orderable Information ........................................................... 18 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (April 2012) to Revision F Page • Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 • Changed VOLA value 0.9 to 0.3 .............................................................................................................................................. 6 Changes from Revision D (September 2011) to Revision E • Added notes to pin out graphics............................................................................................................................................. 3 Changes from Revision C (August 2011) to Revision D • 2 Page Page Added ±8-kV Human-Body Model (A114-B) (YZP Package Only) to Features ..................................................................... 1 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 5 Pin Configuration and Functions PW PACKAGE (TOP VIEW) 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 B1 B2 B3 B4 VCCB GND B5 B6 B7 B8 A1 1 20 VCCA 2 19 A2 A3 A4 A5 3 18 4 17 5 16 6 15 A6 A7 7 14 8 13 9 12 10 11 B2 B3 B4 B5 VCCA A2 A3 A4 A5 A6 A7 A8 B6 B7 B8 GND 1 20 Note: YZP PACKAGE (BALL SIDE VIEW) E B6 B8 A8 A6 D GND B7 A7 OE 4 19 VCCB 18 B2 17 B3 5 6 16 B4 15 B5 C VCCB B5 A5 VCCA 7 14 B6 13 B7 B B4 B3 A3 A4 12 B8 A B2 B1 A1 A2 1 2 3 4 2 3 8 9 10 OE A8 OE B1 VCCB B1 1 11 GND A1 A2 A3 A4 VCCA OE A5 A6 A7 A8 RGY PACKAGE (TOP VIEW) A1 DQS PACKAGE (TOP VIEW) For the RGY package, the exposed center thermal pad must be connected to ground. A. Pullup resistors are not required on both sides for Logic I/O. B. If pullup or pulldown resistors are needed, the resistor value must be over 50 kΩ. C. 50 kΩ is a safe recommended value, if the customer can accept higher VOL or lower VOH, smaller pullup or pulldown resistor is allowed, the draft estimation is VOL = VCCOUT × 4.5 k/(4.5 k + RPU) and VOH = VCCOUT × RDW/(4.5 k + RDW). D. If pullup resistors are needed, please refer to the TXS0108 or contact TI. E. For detailed information, please refer to application note SCEA043. GXY OR ZXY PACKAGE (BOTTOM VIEW) 1 2 3 4 5 D C B A Pin Functions PIN (1) NAME PW, RGY NO. DQS NO. YZP NO. I/O (1) FUNCTION A1 1 1 A3 I/O VCCA 2 5 C4 S Input/output 1. Referenced to VCCA. A2 3 2 A4 I/O Input/output 2. Referenced to VCCA. A3 4 3 B3 I/O Input/output 3. Referenced to VCCA. A4 5 4 B4 I/O Input/output 4. Referenced to VCCA. A5 6 7 C3 I/O Input/output 5. Referenced to VCCA. A6 7 8 E4 I/O Input/output 6. Referenced to VCCA. A7 8 9 D3 I/O Input/output 7. Referenced to VCCA. A8 9 10 E3 I/O Input/output 8. Referenced to VCCA. OE 10 6 D4 I Output enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. GND 11 15 D1 S Ground B8 12 11 E2 I/O Input/output 8. Referenced to VCCB. B7 13 12 D2 I/O Input/output 7. Referenced to VCCB. B6 14 13 E1 I/O Input/output 6. Referenced to VCCB. B5 15 14 C2 I/O Input/output 5. Referenced to VCCB. A-port supply voltage. 1.1 V ≤ VCCA ≤ 3.6 V, VCCA ≤ VCCB. I = input, O = output, I/O = input and output, S = power supply Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 3 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com Pin Functions (continued) PIN I/O (1) FUNCTION NAME PW, RGY NO. DQS NO. YZP NO. B4 16 17 B1 I/O Input/output 4. Referenced to VCCB. B3 17 18 B2 I/O Input/output 3. Referenced to VCCB. B2 18 19 A1 I/O Input/output 2. Referenced to VCCB. VCCB 19 16 C1 S B1 20 20 A2 I/O Input/output 1. Referenced to VCCB. — For the RGY package, the exposed center thermal pad must be connected to ground. Thermal Pad — B-port supply voltage. 1.65 V ≤ VCCB ≤ 5.5 V. Pin Assignments (20-Ball GXY/ZXY Package) 4 1 2 3 4 5 D VCCB B2 B4 B6 B8 C B1 B3 B5 B7 GND B A1 A3 A5 A7 OE A VCCA A2 A4 A6 A8 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 6 Specifications 6.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCCA Supply voltage range –0.5 4.6 V VCCB Supply voltage range –0.5 6.5 V VI Input voltage range (2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2) A inputs –0.5 VCCA + 0.5 B inputs –0.5 VCCB + 0.5 IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCCA, VCCB, or GND ±100 mA (1) (2) (3) (3) V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. The value of VCCA and VCCB are provided in the recommended operating conditions table. 6.2 Handling Ratings Tstg Storage temperature range MIN MAX UNIT –65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1), A Port Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1), B Port V(ESD) Electrostatic discharge 2 –15 15 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2), A Port Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2), A Port (YZP Package only) 1 –8 8 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2), B Port (1) (2) kV 1 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) VCCA VCCA VCCB High-level input voltage VIL Low-level input voltage Δt/Δv Input transition rise or fall rate (1) (2) (3) VCCB Supply voltage VIH TA (2) Data inputs OE 1.2 V to 3.6 V Data inputs 1.2 V to 5.5 V OE 1.2 V to 3.6 V A-port inputs 1.2 V to 3.6 V B-port inputs 1.2 V to 3.6 V 1.65 V to 5.5 V 1.65 V to 5.5 V MIN MAX 1.2 3.6 1.65 5.5 VCCI x 0.65 (3) VCCI VCCA x 0.65 5.5 0 VCCI x 0.35 (3) 0 VCCA x 0.35 1.65 V to 5.5 V 40 1.65 V to 3.6 V 40 4.5 V to 5.5 V 30 Operating free-air temperature –40 85 UNIT V V V ns/V °C The A and B sides of an unused data I/O pair must be held in the same state, i.e., both at VCCI or both at GND. VCCA must be less than or equal to VCCB and must not exceed 3.6 V. VCCI is the supply voltage associated with the input port. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 5 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com 6.4 Thermal Information TXB0108 THERMAL METRIC (1) PW RGY DQS YZP GXY ZXY UNIT 20 PINS RθJA Junction-to-ambient thermal resistance 101.8 35.3 108.5 66.2 156.7 156.7 RθJC(to Junction-to-case (top) thermal resistance 35.5 42.1 32.3 0.4 39.9 39.9 RθJB Junction-to-board thermal resistance 52.8 11.1 42.4 52.0 85.9 85.9 ψJT Junction-to-top characterization parameter 2.2 0.7 0.7 1.5 1.1 1.1 ψJB Junction-to-board characterization parameter 52.2 11.2 42 51.9 85.4 85.4 RθJC(b Junction-to-case (bottom) thermal resistance – 3.8 – – – – p) °C/W ot) (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) (1) (2) PARAMETER TEST CONDITIONS VCCA VCCB 1.2 V IOH = –20 μA VOLA IOL = 20 μA VOHB IOH = –20 μA 1.65 V to 5.5 V VOLB IOL = 20 μA 1.65 V to 5.5 V OE Ioff IOZ MAX 0.3 1.4 V to 3.6 V 0.4 VCCB – 0.4 V V μA 1.65 V to 5.5 V ±1 ±2 0 V to 5.5 V ±1 ±2 B port 0 V to 3.6 V 0V ±1 ±2 1.2 V to 3.6 V 1.65 V to 5.5 V ±1 ±2 OE = GND VI = VCCI or GND, IO = 0 1.4 V to 3.6 V 3.6 V 0V 0V 5.5 V VI = VCCI or GND, IO = 0 1.4 V to 3.6 V ICCA + ICCB VI = VCCI or GND, IO = 0 1.2 V ICCZA VI = VCCI or GND, IO = 0, OE = GND ICCZB VI = VCCI or GND, IO = 0, OE = GND OE A port B port 1.65 V to 5.5 V 1.65 V to 5.5 V 3.6 V 0V 0V 5.5 V 1.4 V to 3.6 V 1.65 V to 5.5 V 1.2 V 1.4 V to 3.6 V μA μA 0.06 5 2 μA –2 3.4 5 –2 μA 2 3.5 10 μA 0.05 1.65 V to 5.5 V 1.2 V 1.4 V to 3.6 V V 0.4 0V A or B port UNIT V 1.2 V to 3.6 V ICCB 6 MIN VCCA – 0.4 1.2 V 1.2 V (1) (2) MAX A port ICCA Cio TYP 1.4 V to 3.6 V 1.2 V CI MIN –40°C to 85°C 1.1 VOHA II TA = 25°C 5 μA 3.3 1.65 V to 5.5 V 1.2 V to 3.6 V 1.65 V to 5.5 V 1.2 V to 3.6 V 1.65 V to 5.5 V 5 5 5.5 5 6.5 8 10 μA pF pF VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 6.6 Timing Requirements: VCCA = 1.2 V TA = 25°C, VCCA = 1.2 V VCCB = 1.8 V VCCB = 2.5 V VCCB = 3.3 V VCCB = 5 V TYP TYP TYP TYP 20 20 20 20 Mbps 50 50 50 50 ns Data rate tw Pulse duration Data inputs UNIT 6.7 Timing Requirements: VCCA = 1.5 V ± 0.1 V over recommended operating free-air temperature range, VCCA = 1.5 V ± 0.1 V (unless otherwise noted) VCCB = 1.8 V ± 0.15 V MIN MAX Data rate tw VCCB = 2.5 V ± 0.2 V MIN MAX 50 Pulse duration Data inputs VCCB = 3.3 V ± 0.3 V MIN MAX 50 20 VCCB = 5 V ± 0.5 V MIN 50 20 50 20 UNIT MAX 20 Mbps ns 6.8 Timing Requirements: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) VCCB = 1.8 V ± 0.15 V MIN MAX Data rate tw VCCB = 2.5 V ± 0.2 V MIN MAX 52 Pulse duration Data inputs VCCB = 3.3 V ± 0.3 V MIN MAX 60 19 VCCB = 5 V ± 0.5 V MIN 60 17 60 17 UNIT MAX 17 Mbps ns 6.9 Timing Requirements: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) VCCB = 2.5 V ± 0.2 V MIN MAX Data rate tw VCCB = 3.3 V ± 0.3 V MIN MAX 70 Pulse duration Data inputs VCCB = 5 V ± 0.5 V MIN 100 14 100 10 UNIT MAX 10 Mbps ns 6.10 Timing Requirements: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) VCCB = 3.3 V ± 0.3 V MIN Data rate tw VCCB = 5 V ± 0.5 V MAX MIN 100 Pulse duration Data inputs 10 UNIT MAX 100 10 Mbps ns 6.11 Switching Characteristics: VCCA = 1.2 V TA = 25°C, VCCA = 1.2 V PARAMETER tpd FROM (INPUT) TO (OUTPUT) VCCB = 1.8 V VCCB = 2.5 V VCCB = 3.3 V VCCB = 5 V TYP TYP TYP TYP A B 9.5 7.9 7.6 8.5 B A 9.2 8.8 8.4 8 A 1 1 1 1 B 1 1 1 1 A 20 17 17 18 B 20 16 15 15 A-port rise and fall times 4.1 4.4 4.1 3.9 ten OE tdis OE trA, tfA Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 UNIT ns μs ns ns 7 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com Switching Characteristics: VCCA = 1.2 V (continued) TA = 25°C, VCCA = 1.2 V PARAMETER FROM (INPUT) TO (OUTPUT) VCCB = 1.8 V VCCB = 2.5 V VCCB = 3.3 V VCCB = 5 V TYP TYP TYP TYP UNIT trB, tfB B-port rise and fall times 5 5 5.1 5.1 ns tSK(O) Channel-to-channel skew 2.4 1.7 1.9 7 ns 20 20 20 20 Mbps Max data rate 6.12 Switching Characteristics: VCCA = 1.5 V ± 0.1 V over recommended operating free-air temperature range, VCCA = 1.5 V ± 0.1 V (unless otherwise noted) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A B ten OE tdis OE VCCB = 1.8 V ± 0.15 V VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V UNIT MIN MAX MIN MAX MIN MAX MIN MAX B 1.4 12.9 1.2 10.1 1.1 10 0.8 9.9 A 0.9 14.2 0.7 12 0.4 11.7 0.3 13.7 A 1 1 1 1 B 1 1 1 1 ns μs A 6.6 33 6.4 25.3 6.1 23.1 5.9 24.6 B 6.6 35.6 5.8 25.6 5.5 22.1 5.6 20.6 A-port rise and fall times 0.8 6.5 0.8 6.3 0.8 6.3 0.8 6.3 ns trB, tfB B-port rise and fall times 1 7.3 0.7 4.9 0.7 4.6 0.6 4.6 ns tSK(O) Channel-to-channel skew trA, tfA 2.6 Max data rate 1.9 50 1.6 50 1.3 50 50 ns ns Mbps 6.13 Switching Characteristics: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A B ten OE tdis OE VCCB = 1.8 V ± 0.15 V VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V UNIT MIN MAX MIN MAX MIN MAX MIN MAX B 1.6 11 1.4 7.7 1.3 6.8 1.2 6.5 A 1.5 12 1.2 8.4 0.8 7.6 0.5 7.1 A 1 1 1 1 B 1 1 1 1 ns μs A 5.9 26.7 5.6 21.6 5.4 18.9 4.8 18.7 B 6.1 33.9 5.2 23.7 5 19.9 5 17.6 trA, tfA A-port rise and fall times 0.7 5.1 0.7 5 1 5 0.7 5 ns trB, tfB B-port rise and fall times 1 7.3 0.7 5 0.7 3.9 0.6 3.8 ns tSK(O) Channel-to-channel skew 0.6 ns 0.8 Max data rate 0.7 52 0.6 60 60 60 ns Mbps 6.14 Switching Characteristics: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) PARAMETER tpd 8 FROM (INPUT) TO (OUTPUT) A B VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V MIN MAX B 1.1 A 1 Submit Documentation Feedback VCCB = 5 V ± 0.5 V UNIT MIN MAX MIN MAX 6.4 1 5.3 0.9 4.7 7 0.6 5.6 0.3 4.4 ns Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 Switching Characteristics: VCCA = 2.5 V ± 0.2 V (continued) over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) PARAMETER FROM (INPUT) ten OE tdis OE VCCB = 2.5 V ± 0.2 V TO (OUTPUT) MIN VCCB = 3.3 V ± 0.3 V MAX MIN VCCB = 5 V ± 0.5 V MAX MIN UNIT MAX A 1 1 1 B 1 1 1 μs A 5 16.9 4.9 15 4.5 13.8 B 4.8 21.8 4.5 17.9 4.4 15.2 A-port rise and fall times 0.8 3.6 0.6 3.6 0.5 3.5 ns trB, tfB B-port rise and fall times 0.6 4.9 0.7 3.9 0.6 3.2 ns tSK(O) Channel-to-channel skew trA, tfA 0.4 Max data rate 0.3 70 ns 0.3 100 ns 100 Mbps 6.15 Switching Characteristics: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A B ten OE tdis OE VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V UNIT MIN MAX MIN MAX B 0.9 4.9 0.8 4 A 0.5 5.4 0.2 4 A 1 1 B 1 1 A 4.5 13.9 4.1 12.4 B 4.1 17.3 4 14.4 ns μs ns trA, tfA A-port rise and fall times 0.5 3 0.5 3 ns trB, tfB B-port rise and fall times 0.7 3.9 0.6 3.2 ns tSK(O) Channel-to-channel skew 0.4 Max data rate 0.3 100 ns 100 Mbps 6.16 Operating Characteristics TA = 25°C VCCA 1.2 V 1.2 V 1.5 V 1.8 V 2.5 V 2.5 V 3.3 V 2.5 V 5V 3.3 V to 5V VCCB PARAMETER TEST CONDITIONS 5V CpdA CpdB CpdA CpdB A-port input, B-port output B-port input, A-port output A-port input, B-port output B-port input, A-port output A-port input, B-port output B-port input, A-port output A-port input, B-port output B-port input, A-port output CL = 0, f = 10 MHz, tr = tf = 1 ns, OE = VCCA (outputs enabled) CL = 0, f = 10 MHz, tr = tf = 1 ns, OE = GND (outputs disabled) 1.8 V 1.8 V 1.8 V UNIT TYP TYP TYP TYP TYP TYP 9 8 7 7 7 7 TYP 8 12 11 11 11 11 11 11 35 26 27 27 27 27 28 26 19 18 18 18 20 21 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.03 0.01 0.01 0.01 0.01 0.01 0.01 0.03 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 pF pF 9 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com 6.17 Typical Characteristics VCCB = 3.3 V VCCB = 3.3 V Figure 1. Input Capacitance for OE Pin (CI) vs Power Supply (VCCA) Figure 2. Capacitance for A Port I/O Pins (CIO) vs Power Supply (VCCA) VCCA = 1.8 V Figure 3. Capacitance fpr B Port I/O Pins (CIO) vs Power Supply (VCCB) 10 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 7 Parameter Measurement Information 2 × VCCO From Output Under Test 50 kW From Output Under Test 15 pF 15 pF 1 MW Open 50 kW TEST tPZL/tPLZ tPHZ/tPZH LOAD CIRCUIT FOR ENABLE/DISABLE TIME MEASUREMENT LOAD CIRCUIT FOR MAX DATA RATE, PULSE DURATION PROPAGATION DELAY OUTPUT RISE AND FALL TIME MEASUREMENT S1 S1 2 × VCCO Open VCCI Input VCCI/2 VCCI/2 0V tPLH tPHL tw Output VCCO/2 0.9 y VCCO 0.1 y VCCO VOH tf tr VCCI VCCO/2 VOL Input VCCI/2 0V VOLTAGE WAVEFORMS PULSE DURATION VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES A. B. C. D. E. F. G. VCCI/2 CL includes probe and jig capacitance. All input pulses are supplied by generators having the following characteristics: PRRv10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns. The outputs are measured one at a time, with one transition per measurement. tPLH and tPHL are the same as tpd. VCCI is the VCC associated with the input port. VCCO is the VCC associated with the output port. All parameters and waveforms are not applicable to all devices. Figure 4. Load Circuits and Voltage Waveforms Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 11 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com 8 Detailed Description 8.1 Overview The TXB0108 device is an 8-bit, directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.2 V to 3.6 V, while the B port can accept I/O voltages from 1.65 V to 5.5 V. The device is a buffered architecture with edge-rate accelerators (one-shots) to improve the overall data rate. This device can only translate push-pull CMOS logic outputs. If for open-drain signal translation, please refer to TI TXS010X products. 8.2 Functional Block Diagram 12 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 8.3 Feature Description 8.3.1 Architecture The TXB0108 architecture (see Figure 5) does not require a direction-control signal to control the direction of data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0108 can maintain a high or low, but are designed to be weak so that they can be overdriven by an external driver when data on the bus starts flowing the opposite direction. The output one-shots detect rising or falling edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T3) for a short duration, which speeds up the lowto-high transition. Similarly, during a falling edge, the one-shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up the high-to-low transition. The typical output impedance during output transition is 70 Ω at VCCO = 1.2 V to 1.8 V, 50 Ω at VCCO = 1.8 V to 3.3 V and 40 Ω at VCCO = 3.3 V to 5 V. VCCA VCCB One Shot T1 4k One Shot T2 A B One Shot T3 4k T4 One Shot Figure 5. Architecture of TXB0108 I/O Cell 8.3.2 Input Driver Requirements Typical IIN vs VIN characteristics of the TXB0108 are shown in Figure 6. For proper operation, the device driving the data I/Os of the TXB0108 must have drive strength of at least ±2 mA. IIN VT/4 kW VIN –(VD – VT)/4 kW A. VT is the input threshold voltage of the TXB0108 (typically VCCI/2). B. VD is the supply voltage of the external driver. Figure 6. Typical IIN vs VIN Curve Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 13 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com Feature Description (continued) 8.3.3 Output Load Considerations TI recommends careful PCB layout practices with short PCB trace lengths to avoid excessive capacitive loading and to ensure that proper O.S. triggering takes place. PCB signal trace-lengths should be kept short enough such that the round-trip delay of any reflection is less than the one-shot duration. This improves signal integrity by ensuring that any reflection sees a low impedance at the driver. The O.S. circuits have been designed to stay on for approximately 10 ns. The maximum capacitance of the lumped load that can be driven also depends directly on the one-shot duration. With very heavy capacitive loads, the one-shot can time-out before the signal is driven fully to the positive rail. The O.S. duration has been set to best optimize trade-offs between dynamic ICC, load driving capability, and maximum bit-rate considerations. Both PCB trace length and connectors add to the capacitance that the TXB0108 output sees, so it is recommended that this lumped-load capacitance be considered to avoid O.S. re-triggering, bus contention, output signal oscillations, or other adverse system-level affects. 8.3.4 Enable and Disable The TXB0108 has an OE input that is used to disable the device by setting OE = low, which places all I/Os in the high-impedance (Hi-Z) state. The disable time (tdis) indicates the delay between when OE goes low and when the outputs actually get disabled (Hi-Z). The enable time (ten) indicates the amount of time the user must allow for the one-shot circuitry to become operational after the OE is high. 8.3.5 Pullup or Pulldown Resistors on I/O Lines The TXB0108 is designed to drive capacitive loads of up to 70 pF. The output drivers of the TXB0108 have low dc drive strength. If pullup or pulldown resistors are connected externally to the data I/Os, their values must be kept higher than 50 kΩ to ensure that they do not contend with the output drivers of the TXB0108. For the same reason, the TXB0108 should not be used in applications such as I2C or 1-Wire where an open-drain driver is connected on the bidirectional data I/O. For these applications, use a device from the TI TXS01xx series of level translators. 8.4 Device Functional Modes The TXB0108 device has two functional modes, enabled and disabled. To disable the device, set the OE input low, which places all I/Os in a high impedance state. Setting the OE input high will enable the device. 14 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TXB0108 can be used in level-translation applications for interfacing devices or systems operating at different interface voltages with one another. It can only translate push-pull CMOS logic outputs. If for open-drain signal translation, please refer to TI TXS010X products. Any external pulldown or pullup resistors are recommended to be larger than 50kΩ. 9.2 Typical Application Figure 7. Typical Operating Circuit 9.2.1 Design Requirements For this design example, use the parameters listed in Table 1. Make sure the VCCA ≤VCCB. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 1.2 V to 3.6 V Output voltage range 1.65 V to 5.5 V 9.2.2 Detailed Design Procedure To begin the design process, determine the following: • Input voltage range - Use the supply voltage of the device that is driving the TXB0108 device to determine the input voltage range. For a valid logic high the value must exceed the VIH of the input port. For a valid logic low, the value must be less than the VIL of the input port. • Output voltage range - Use the supply voltage of the device that the TXB0108 device is driving to determine the output voltage range. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 15 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com - Do not recommend having the external pullup or pulldown resistors. If mandatory, it is recommended the value should be larger than 50 kΩ. • An external pulldown or pullup resistor decreases the output VOH and VOL. Use the below equations to draft estimate the VOH and VOL as a result of an external pulldown and pullup resistor. VOH = VCCx × RPD / (RPD + 4.5 kΩ) VOL = VCCx × 4.5kΩ / (RPU + 4.5 kΩ) Where: • VCCx is the output port supply voltage on either VCCA or VCCB • RPD is the value of the external pull down resistor • RPU is the value of the external pull up resistor • 4.5 kΩ is the counting the variation of the serial resistor 4 kΩ in the I/O line. 9.2.3 Application Curves Figure 8. Level-Translation of a 2.5-MHz Signal 16 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 TXB0108 www.ti.com SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 10 Power Supply Recommendations During operation, ensure that VCCA ≤ VCCB at all times. During power-up sequencing, VCCA ≥ VCCB does not damage the device, so any power supply can be ramped up first. The TXB0108 has circuitry that disables all output ports when either VCC is switched off (VCCA/B = 0 V). The output-enable (OE) input circuit is designed so that it is supplied by VCCA and when the (OE) input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state of the outputs during power-up or power-down, the OE input pin must be tied to GND through a pulldown resistor and must not be enabled until VCCA and VCCB are fully ramped and stable. The minimum value of the pulldown resistor to ground is determined by the current-sourcing capability of the driver. 11 Layout 11.1 Layout Guidelines To ensure reliability of the device, the following common printed-circuit board layout guidelines is recommended. • Bypass capacitors should be used on power supplies and should be placed as close as possible to the VCCA, VCCB pin and GND pin. • Short trace lengths should be used to avoid excessive loading. • PCB signal trace-lengths must be kept short enough so that the round-trip delay of any reflection is less than the one-shot duration, approximately 10 ns, ensuring that any reflection encounters low impedance at the source driver. 11.2 Layout Example Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 17 TXB0108 SCES643F – NOVEMBER 2006 – REVISED NOVEMBER 2014 www.ti.com 12 Device and Documentation Support 12.1 Trademarks All trademarks are the property of their respective owners. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 18 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXB0108 PACKAGE OPTION ADDENDUM www.ti.com 19-Jun-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TXB0108DQSR ACTIVE USON DQS 20 3000 Green (RoHS & no Sb/Br) CU NIPDAUAG Level-1-260C-UNLIM -40 to 85 5MR 5MH TXB0108PWR ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 YE08 TXB0108PWRG4 ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 YE08 TXB0108RGYR ACTIVE VQFN RGY 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU | Call TI Level-2-260C-1 YEAR -40 to 85 YE08 TXB0108RGYRG4 ACTIVE VQFN RGY 20 3000 Green (RoHS & no Sb/Br) Call TI Level-2-260C-1 YEAR -40 to 85 YE08 TXB0108YZPR ACTIVE DSBGA YZP 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 5M TXB0108ZXYR ACTIVE BGA MICROSTAR JUNIOR ZXY 20 2500 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 YE08 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 19-Jun-2015 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 17-Jun-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TXB0108DQSR USON SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DQS 20 3000 177.8 12.4 2.21 4.22 0.81 4.0 12.0 Q1 TXB0108PWR TSSOP PW 20 2000 330.0 16.4 6.95 7.1 1.6 8.0 16.0 Q1 TXB0108RGYR VQFN RGY 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 TXB0108RGYR VQFN RGY 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 TXB0108YZPR DSBGA YZP 20 3000 180.0 8.4 1.99 2.49 0.56 4.0 8.0 Q1 TXB0108ZXYR BGA MI CROSTA R JUNI OR ZXY 20 2500 330.0 12.4 2.8 3.3 1.0 4.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 17-Jun-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TXB0108DQSR USON DQS 20 3000 202.0 201.0 28.0 TXB0108PWR TSSOP PW 20 2000 367.0 367.0 38.0 TXB0108RGYR VQFN RGY 20 3000 355.0 350.0 50.0 TXB0108RGYR VQFN RGY 20 3000 367.0 367.0 35.0 TXB0108YZPR DSBGA YZP 20 3000 182.0 182.0 20.0 TXB0108ZXYR BGA MICROSTAR JUNIOR ZXY 20 2500 338.1 338.1 20.6 Pack Materials-Page 2 D: Max = 2.418 mm, Min =2.358 mm E: Max = 1.918 mm, Min =1.858 mm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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