CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN2510H8 BVDSS ID@VGS=10V, TC=25°C 100V ID@VGS=10V, TA=25°C VGS=10V, ID=30A 11.9A 17mΩ VGS=6V, ID=20A 21mΩ RDSON(TYP) 55A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol Outline DFN5×6 MTN2510H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTN2510H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTN2510H8 CYStek Product Specification Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 2/11 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TA=85°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=30A, VDD=25V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C TA=85°C Operating Junction and Storage Temperature Range 10s VDS VGS (Note 1) (Note 1) (Note 2) IDSM (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) IDM IAS EAS EAR PD (Note 2) (Note 2) 100 ±20 55 39 ID (Note 2) PDSM (Note 2) Tj, Tstg Steady State 11.9 9.5 8.6 Unit V 7.9 6.3 5.7 150 *1 30 45 22.5 *2 130 65 5.7 2.5 4.0 1.8 3.6 1.6 -55~+175 A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient (Note 2) Thermal Resistance, Junction-to-case Symbol t≤10s Steady State RθJA RθJC Typical 18 42 1 Maximum 22 50 1.15 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 3/11 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit 100 2 55 - 3.2 31 17 21 4 ±100 1 25 25 30 V V S nA - 1547 236 122 26 8.7 7.4 30 26 90 48 2 - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 0.87 120 380 55 150 1.3 - Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg μA A mΩ mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=30A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=30A VGS =6V, ID=20A pF VGS=0V, VDS=25V, f=1MHz nC VDS=50V, VGS=10V, ID=30A ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=30A, VGS=0V IF=25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 4/11 Recommended Soldering Footprint unit : mm MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 5/11 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 150 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V ID, Drain Current (A) 120 VGS=6V 90 60 VGS=5V 30 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=10V VGS=6V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 2.4 ID=30A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 120 80 40 2 VGS=10V, ID=30A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 17mΩ 0 0 0 MTN2510H8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 6/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 50 75 100 125 150 175 Gate Charge Characteristics 10 100 VDS=50V VGS , Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 8 ID=30A 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 ID, Maximum Drain Current(A) RDSON Limited 100μs 1ms 10ms 10 100ms 1s 1 TC=25°C, Tj=175°C VGS=10V, RθJC=1.15°C/W Single Pulse DC MTN2510H8 25 30 50 40 30 20 VGS=10V, RθJC=1.15°C/W 10 0 0.1 0.01 10 15 20 Qg, Total Gate Charge(nC) 60 1000 100 5 Maximum Drain Current vs CaseTemperature Maximum Safe Operating Area ID, Drain Current(A) 0 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC, CaseTemperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 7/11 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 150 3000 VDS=10V 2500 Power (W) ID, Drain Current(A) 120 90 60 TJ(MAX) =175C TC=25°C θJC=1.15°C/W 2000 1500 1000 30 500 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0.01 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.15°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTN2510H8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 8/11 Reel Dimension Carrier Tape Dimension MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 9/11 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 10/11 DFN5×6 Dimension (C Forming) Marking : 2510 Device Name Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. MTN2510H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2013.07.04 Revised Date : 2015.03.23 Page No. : 11/11 DFN5×6 Dimension (G Forming) Marking: Device Name 2510 Date Code 8-Lead power pakPlastic PlasticPackage Package 8-Lead DFN5×6 CYStek Package Code: CYS Package Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.40 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.055 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 4.00 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.157 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2510H8 CYStek Product Specification