ROHM RT1E060XN

Data Sheet
4V Drive Nch MOSFET
RT1E060XN
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TSST8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol : XR
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RT1E060XN
 Inner circuit
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Unit
30
20
6
V
V
A
*1
24
1
24
A
A
A
*2
VGSS
ID
IDP *1
IS
Pulsed
ISP
PD
Power dissipation
Channel temperature
Range of storage temperature
(7)
(6)
(5)
∗2
Limits
VDSS
Gate-source voltage
(8)
1.25
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
100
C / W
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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1/6
2011.04 - Rev.A
Data Sheet
RT1E060XN
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
16
22
ID=6A, VGS=10V
-
21
29
m ID=6A, VGS=4.5V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
23
32
Forward transfer admittance
l Yfs l *
4.5
-
-
S
ID=6A, VDS=10V
Input capacitance
Ciss
-
440
-
pF
VDS=10V
Output capacitance
Coss
-
170
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
85
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
8
-
ns
ID=3A, VDD 15V
Rise time
ID=6A, VGS=4.0V
tr *
-
16
-
ns
VGS=10V
td(off) *
-
32
-
ns
RL=5
tf *
-
8
-
ns
RG=10
Total gate charge
Qg *
-
6.8
-
nC
ID=6A, VDD 15V
Gate-source charge
Qgs *
Qgd *
1.6
2.6
-
nC
nC
VGS=5V
Gate-drain charge
-
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=6A, VGS=0V
*Pulsed
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2/6
2011.04 - Rev.A
Data Sheet
RT1E060XN
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
6
6
VGS=3.0V
Ta=25°C
Pulsed
VGS=10.0V
5
5
VGS=4.5V
VGS=4.5V
4
VGS=4.0V
VGS=2.8V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=4.0V
3
2
1
VGS=2.5V
4
VGS=3.0V
VGS=2.8V
3
2
1
VGS=2.5V
Ta=25°C
Pulsed
0
0
0
0.2
0.4
0.6
0.8
1
0
2
4
Drain-Source Voltage : VDS [V]
10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
100
100
VGS=10V
pulsed
Ta=25°C
Pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
8
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
10
VGS=4.0V
VGS=4.5V
VGS=10V
1
0.01
0.1
1
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.01
100
0.1
Drain Current : ID [A]
1
10
100
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
100
100
10
1
0.01
VGS=4V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=4.5V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
6
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
1
0.01
100
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
3/6
2011.04 - Rev.A
Data Sheet
RT1E060XN
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
100
100
VDS=10V
pulsed
VDS=10V
pulsed
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
10
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.001
0.01
0.1
1
10
100
0.0
1.0
2.0
2.5
3.0
3.5
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
VGS=0V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
80
ID=6.0A
ID=3.0A
60
40
20
0
0.01
0.0
0.5
1.0
1.5
0
2.0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
1000
10
VDD≒15V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
100
Ta=25°C
VDD=15V
ID=6A
Pulsed
8
Gate-Source Voltage : VGS [V]
tf
Switching Time : t [ns]
1.5
Gate-Source Voltage : VGS [V]
100
Source Current : Is [A]
0.5
td(off)
td(on)
10
6
4
2
tr
1
0
0.01
0.1
1
10
100
0
4
6
8
10
12
14
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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2
4/6
2011.04 - Rev.A
Data Sheet
RT1E060XN
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
10000
100
Operation in this area is limited by RDS(on)
(VGS = 10V)
Ta=25°C
f=1MHz
VGS=0V
Drain Current : ID [ A ]
Capacitance : C [pF]
10
1000
Ciss
100
Coss
1
10
PW = 1ms
PW = 10ms
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
10
0.1
1
0.1
Crss
0.01
PW = 100μs
0.01
0.01
100
0.1
1
DC operation
10
100
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r（t）
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=100°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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5/6
2011.04 - Rev.A
Data Sheet
RT1E060XN
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.04 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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R1120A