Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ550N10 Inner circuit Taping TL 1000 ∗1 ∗2 (1) (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits Unit 100 20 55 V V A 110 55 A A 110 100 A W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c)* Limits 1.25 Unit C / W Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Source current (Body Diode) Continuous Pulsed Continuous IDP IS *3 Pulsed ISP *1 PD *2 Power dissipation Channel temperature Range of storage temperature *1 (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 PW 10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Thermal resistance Parameter Channel to Case * T C=25°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A Data Sheet RSJ550N10 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions VGS=20V, VDS=0V 100 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=100V, VGS=0V VGS (th) 1 - 2.5 V - 12 16.8 - 13.5 18.9 VDS=10V, ID=1mA ID=27.5A, VGS=10V Static drain-source on-state resistance * RDS (on) Forward transfer admittance l Yfs l* 30 - - S VDS=10V, ID=27.5A Input capacitance Ciss - 6150 - pF VDS=25V Output capacitance Coss - 460 - pF VGS=0V Reverse transfer capacitance Crss - 320 - pF f=1MHz Turn-on delay time td(on)* - 32 - ns VDD 50V, I D=27.5A tr * - 105 - ns VGS=10V td(off)* - 375 - ns RL=1.82 tf * - 360 - ns RG=10 Total gate charge Qg * - 143 - nC VDD 50V, I D=27.5A Gate-source charge Qgs * Qgd * - 16 34 - nC nC VGS=10V Gate-drain charge Min. Typ. Max. - - 1.5 Rise time Turn-off delay time Fall time m ID=27.5A, VGS=4V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=55A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A Data Sheet RSJ550N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 50 50 Ta=25°C pulsed VGS=4.5V 40 40 VGS=4.0V VGS=3.0V 30 VGS=3.0V VGS=2.8V Drain Current : ID [A] Drain Current : ID [A] VGS=10.0V VGS=4.5V VGS=4.0V VGS=10.0V VGS=2.8V 20 VGS=2.5V 10 30 VGS=2.5V 20 10 Ta=25°C pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 10 100 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW] 8 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=10V 10 1 0.01 0.1 1 10 100 10 1 0.01 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Typical Transfer Characteristics 100 100 VGS=4V pulsed VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Drain Currnt : ID [A] Static Drain-Source On-State Resistance RDS(on) [mW] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 1 0.01 0.001 0.1 1 10 100 0.0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] 3/6 2011.06 - Rev.A Data Sheet RSJ550N10 Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 100 Ta=25°C pulsed Source Current : Is [A] 10 Static Drain-Source On-State Resistance RDS(on) [mW] VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 40 ID=27.5A ID=50A 30 20 10 0 0.01 0.0 0.5 1.0 1.5 0 2.0 4 8 10 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics Fig.10 Dynamic Input Characteristics 10 tf 8 Gate-Source Voltage : VGS [V] td(off) 1000 100 tr td(on) VDD≒50V VGS=10V RG=10W Ta=25°C Pulsed 10 Ta=25°C VDD=50V ID=27.5A Pulsed 6 4 2 1 0 0.01 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100110120130140150 Drain Current : ID [A] Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 100000 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V 10000 Capacitance : C [pF] 6 Gate-Source Voltage : VGS [V] 10000 Switching Time : t [ns] 2 Ciss 1000 Crss 100 Coss 10 Ta=25°C Single Pulse 1 0.1 0.01 Mounted on epoxy board. (25mm × 27mm × 0.8mm) Rth(ch-a)=71.4°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.01 0.1 1 10 100 0.0001 1000 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.001 4/6 2011.06 - Rev.A RSJ550N10 Data Sheet Fig.13 Maximum Safe Operating Area 1000 Operation in this area is limited by RDS(on) (VGS = 10V) Drain Current : ID [ A ] 100 10 PW = 300ms PW = 1ms 1 PW = 10ms 0.1 PW = 1s Ta=25°C Single Pulse Mounted on epoxy board. (25mm × 27mm × 0.8mm) 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.06 - Rev.A Data Sheet RSJ550N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A