Data Sheet Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 Symbol VCBO Limits Unit 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC (SC-59) <SOT-346> 2.9 1.1 0.4 0.8 (3) PC 0.5 0.2 A W Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C (2) (1) 0.95 0.95 0.15 (1) Emitter (2) Bace (3) Collector 1.9 0.3Min. Collector current Collector power dissipation 1.6 2.8 Parameter Collector-base voltage Electrical characteristics (Ta=25 C) Parameter Symbol BVCBO BVCEO Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector outoff current Min. 50 50 5 BVEBO ICBO IEBO Emitter cutoff current DC current rransfer ratio Collector-emitter saturation voltage hFE Typ. Max. Unit − − − 0.5 0.5 390 V V V − − 120 − − − − − − − − − − 250 6.5 0.4 VCE(sat) fT Transition frequency Output capacitance Cob − − µA µA − V MHz pF Conditions IC=100µA IC=1mA IE=100µA VCB=30V VEB=4V VCE/IC=3V/10mA IC/IB=150mA/15mA VCE=5V , IE= −20mA , f=100MHz VCB=10V , IE=0A , f=1MHz Packaging specifications and hFE 2SD1484K SMT3 QR Package hFE 2SD1949 UMT3 QR Marking Code Basic ordering unit (pleces) Y Y T106 3000 T146 3000 Type Danotes hFE hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev. E 2SD1949 / 2SD1484K Data Sheet Electrical characteristic curves 100 200 1000 0.50 VCE=6V Ta=25 C 0.45 2 1 -25 C 5 25 C C 20 10 0.5 500 0.40 80 DC CURRENT GAIN hFE COLLECTOR CURRENT : IC (mA) 50 Ta=100 COLLECTOR CURRENT : IC (mA) VCE=6V 100 0.35 0.30 60 0.25 0.20 40 0.15 0.10 20 1V 100 50 0.05 0.2 VCE=3V 200 IB=0mA 0.1 0 0.2 0.4 0.6 0.8 1.0 2 3 4 0.1 0.2 0.5 1 2 5 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT IC (mA) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics Fig.3 DC current gain vs. Collector current ( ) Ta=25 C VCE=10V 25 C -25 C 100 50 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=75 C IC/IB=10 0.5 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 200 1 BASE TO VOLTAGE : VBE (V) 1000 DC CURRENT GAIN hFE 0 0 1.2 0.2 100/1 IC/IB= 0.1 50/1 20/1 0.05 10/1 0.5 0.2 0.1 0.05 25 C Ta=75 C -25 C 20 1 2 5 10 20 0.02 50 100 200 500 1000 5 10 20 50 100 200 500 0.02 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Fig.4 DC current gain vs. Collector currnet ( ) Fig.5 Collector-emitter saturation voltage vs. Collector current Fig.6 Collector-emitter saturation voltage vs. collector current Ta=25 C f=1MHz IE=0A 50 Cib 20 Cob 10 Ta=25 C 5 VCE=6V 500 TRANSITION FREQUENCY : fT (MHZ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT IC (mA) 200 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current www.rohm.com © 2011 ROHM Co., Ltd. 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