NPN small signal transistor SSTA13 Dimensions (Unit : mm) Features (1) High Current Gain. 2.9 0.4 (3) Package 1.3 2.4 Packaging specifications Type 0.95 0.45 0.2Min. SSTA13 Taping Code T116 Basic ordering unit (pieces) 3000 (2) (1) 0.95 0.95 1.9 (1)Emitter SSTA13 0.15 Each lead has same dimensions (2)Base Abbreviated symbol : R1M (3)Collector Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCES 30 V Emitter-base voltage V VEBO 10 Collector current IC 0.3 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 125 °C Electrical characteristics (Ta=25°C) Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCES 30 − − V IC= 100μA Collector-emitter breakdown voltage BVCEO 30 − − V IC= 10μA BVEBO 10 − − V IE= 10μA ICBO − − 0.1 μA VCB= 30V Parameter Emitter-base breakdown voltage Collector-base cutoff current Symbol Conditions IEBO − − 0.1 μA VEB= 10V Collector-emitter saturation voltage VCE(sat) − − 1.5 V IC/IB= 100mA/ 0.1mA Base-emitter voltage VBE(on) − − 2.0 V VCE= 5V, IC= 100mA 5000 − − 10000 − − Emitter-base cutoff current − DC current transfer ratio hFE Transition frequency fT 125 − − MHz Cob − 5.4 − pF Collector output capacitance ∗ VCE= 5V, IC= 10mA VCE= 5V, IC= 100mA ∗ VCE= 5V, IE= 10mA, f=100MHz VCB= 10V, f=100kHz, IE=0 ∗ Pulsed www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/2 2011.09 - Rev.B SSTA13 Data Sheet Electrical characteristics curves 14 12 300 10 8.0 200 6.0 4.0 100 2.0 IB=0μA 0 0 1.0 2.0 80 100k 1.2 40 20 10k 5k 2k 1k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB=0μA 1.0 2.0 3.0 4.0 Ta=25°C 20k Ta=−55°C 10k 5k 2k 1k 0.1 0.2 500 1000 0.5 1.0 2.0 5.0 10 20 50 100 200 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Base emitter saturation voltage vs. collector current www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1.0 0.8 0.6 50 100 200 20 500 1000 Fig.3 Base emitter 'ON' voltage vs. collector current 1.8 Ta=25°C 1.6 IC/IB=1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 50 100 200 20 500 1000 Fig.6 Collector emitter saturation voltage vs. collector current 100 Ta=25°C f=1MHz 50 1000 Ta=25°C VCE=5V 500 200 100 50 20 Cib 10 5 Cob 2 20 10 1.0 5.0 10 COLLECTOR CURRENT : IC (mA) CAPACITANCE (pF) 1.4 1.2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1.6 1.4 500 1000 Fig.4 DC current gain vs. collector current ( Ι ) 1.8 1.6 COLLECTOR CURRENT : IC (mA) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) 2.2 Ta=25°C IC/IB=1000 2.0 1.8 0.4 1.0 2.0 5.0 100k Ta=25°C VCE=5V 50k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 5V 3V 0.4 0.2 Ta=25°C 2.0 VCE=5V Fig.2 Typical output characteristics ( ΙΙ ) VCE=10V 20k 0.8 2.2 COLLECTOR - EMITTER VOLTAGE : VCE (V) Ta=25°C 50k 1.6 60 COLLECTOR - EMITTER VOLTAGE : VCE (V) Fig.1 Typical output characteristics ( Ι ) 1.8 0 0 2.0 BASE EMITTER VOLTAGE : VBE(on) (V) 400 2.4 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 16 100 Ta=25°C 20 18 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) 500 Ta=25°C 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.8 Current gain-bandwidth product vs. collector current 2/2 1 0.5 1 2 5 10 20 50 REVERSE BIAS VOLTAGE (V) Fig.9 Capacitance vs. reverse bias voltage 2011.09 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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