2012161315661191

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD2142
TRANSISTOR (NPN)
SOT–23
FEATURES
 Darlington Connection for a High hFE
 High Input Impedance
MARKING: R1M
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
3. COLLECTOR
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
300
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Collector-base breakdown voltage
Parameter
Symbol
V(BR)CBO
Test conditions
IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
12
V
Collector cut-off current
ICBO
VCB=30V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=12V, IC=0
0.1
µA
hFE
VCE=3V, IC=100mA
1.4
V
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
Min
40
Typ
Max
Unit
V
5000
IC=200mA, IB=0.2mA
VCE=5V,IC=10mA, f=100MHz
200
MHz
VCB=10V, IE=0, f=1MHz
2.5
pF
A,Oct,2010