JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4126 TRANSISTOR (PNP) 1. EMITTER FEATURES z PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. z As Complementary Type, The NPN Transistor 2N4124 is Recommended. 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -25 VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -4 V IC Collector Current -0.2 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.01mA,IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -4 V Collector cut-off current ICBO VCB=-20V,IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency * hFE(1) hFE(2) * VCE=-1V, IC=-2mA 120 VCE=-1V, IC=-50mA 60 360 VCE(sat) * IC=-50mA,IB=-5mA -0.4 V VBE (sat) * IC=-50mA,IB=-5mA -0.95 V 4.5 pF Cob fT VCB=-5V,IE=0, f=1MHz VCE=-20V,IC=-10mA, f=100MHz 250 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%. www.cj-elec.com 1 C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015