SSF32E0E 30V N-Channel MOSFET GENERAL FEATURES ● VDS =30V,ID = 0.1A RDS(ON) < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram APPLICATIONS ●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and Pin Assignment SOT-523 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size S32E SSF32E0E SOT-523 Tape Width Quantity 8 mm 3000 units Ø180mm ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID 0.1 ID (70℃) 0.07 IDM 0.4 A PD 0.2 W TJ,TSTG -55 To 150 ℃ R θJA 400 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BVDSS VGS=0V ID=250μA Page 1 of 4 30 V Rev.1.2 SSF32E0E 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate-Source Breakdown Voltage IDSS IGSS VDS=30V,VGS=0V 1 μA VGS=±5V,V DS=0V 100 nA VGS=±10V,VDS=0V 150 nA VGS=±20V,VDS=0V 10 uA BVGSO V DS=0V, IG=±250uA ±20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.8 Drain-Source On-State Resistance RDS(ON) V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 VGS=4V, ID=0.01A 5 8 VGS=2.5V, ID=0.001A 7 13 VDS=3V,ID=0.01A V Ω 0.02 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=5V,VGS=0V, F=1.0MHz 45 PF 12 PF 7 PF 15 nS 75 nS SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-Off Delay Time td(off) VDD=5V,VGS=5V, RGEN=10Ω，RL=500Ω ID=0.01A VSD VGS=0V,IS=0.01A DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) 1.3 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.2 V SSF32E0E 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.2 SSF32E0E 30V N-Channel MOSFET SOT-523 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b1 b2 c D E E1 Dimensions in Millimeters MIN. MAX. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 e e1 0.500TYP 0.900 L L1 0.260 0.460 θ 0° 8° 1.100 0.400REF NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.2