APW7159A

APW7159A
Dual Channel Synchronous Buck PWM Controller for SMPS
Features
General Description
•
•
The APW7159A is a dual channel voltage mode and syn-
Single 12V Power Supply Required
Excellent Output Voltage Regulation
chronous PWM controller which drives dual N-channel
MOSFETs. The two channels are operated with 180 de-
- 1.0V±0.8% Internal Reference Over Line and
Temperature
•
gree phase shift.
The device integrates all of the control, monitoring, and
Simple Single Loop Control Design
- Voltage Mode PWM Control
•
•
protecting functions into a single package; provides two
controlled power output with over-voltage, over-
0~100% Duty Ratio
Programmable Frequency Range from 50kHz to
temperature, and over-current protections.
The APW7159A provides excellent regulation for output
400kHz (Constant 50kHz when Floating)
Integrated Soft-Start and Soft-Off (Patent Pending)
•
•
•
•
•
load variation. The internal 1.0V temperature-compensated reference voltage provides high accuracy of 0.8%
Support Pre-Biased Power-On
Both Channel with 180o Phase Shift
over line and temperature. The device includes a 50kHz
free-running triangle-wave oscillator that is adjustable
Integrated Boot-Strap Diode
Over-Current Protection
from 50kHz to 400kHz.
The APW7159A has been equipped with excellent pro-
- Sense High Side MOSFET’s RDS(ON)
120% Over-Voltage Protection
•
•
•
•
•
tection functions: POR, OCP, UVP, and OVP protections.
The Power-On-Reset (POR) circuit can monitor the VCC
50% Under-Voltage Protection
Over-Temperature Protection
and OCSET voltage to make sure the supply voltage exceeds their threshold voltage while the controller is
Available in SOP-20 Package
Lead Free and Green Devices Available
running. The Over-Current Protection (OCP) monitors the
output current by using the voltage drop across the high
(RoHS Compliant)
side MOSFET’s RDS(ON). When the output current reaches
the trip point, the controller will be latched. Under-Voltage
Applications
Protection (UVP) and Over-Voltage Protection (OVP) monitor the FB voltage to protect APW7159A from burnout when
•
output voltage is under 50% or over 120% of normal output voltage. The APW7159A is available in SOP-20
SMPS
package.
Simplified Application Circuit
VIN
Phase Shift
VOUT1
PWM
Controller
1
PWM
Controller
2
VOUT2
APW7159A
S
ANPEC reserves the right to make changes to improve reliability or manufacturability
without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
1
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APW7159A
Ordering and Marking Information
Package Code
K : SOP-20
Operating Ambient Temperature Range
I : -40 to 85oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APW7159A
Assembly Material
Handling Code
Temperature Range
Package Code
APW7159A
APW7159A
XXXXX
K:
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
Pin Configuration
FB1
1
20 RT
COMP1
2
19 SS
OCSET1
3
18 FB2
GND
4
17 COMP2
VCC
5
16 OCSET2
15 BOOT2
BOOT1
6
UGATE1
PHASE1
7
8
LGATE1
9
14 UGATE2
13 PHASE2
12 LGATE2
11 NC
PGND 10
SOP-20
(Top View)
Absolute Maximum Ratings
Symbol
VVCC
VBOOT1/2
(Note 1)
Parameter
Rating
Unit
Input Bias Supply Voltage (VCC to GND)
-0.3 ~ 16
V
BOOT1/ BOOT2 to PHASE1/PHASE2 Voltage
-0.3 ~ 16
V
<400ns pulse width
-5 ~ VBOOT1/2+5
V
>400ns pulse width
-0.3 ~ VBOOT1/2+0.3
V
<400ns pulse width
-5 ~ VVCC+0.3
V
>400ns pulse width
-0.3 ~ VVCC+0.3
V
<400ns pulse width
-10 ~ 30
V
>400ns pulse width
-0.3 ~ 16
V
-0.3 ~ 7
V
-0.3 ~ VVCC+0.3
V
UGATE1/UGATE2 to PHASE1/PHASE2
LGATE1/LGATE2 to PGND Voltage
PHASE1/PHASE2 to PGND Voltage
RT, SS, COMP1, COMP2, FB1, FB2 to GND Voltage
OCSET1, OCSET2 to GND
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
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APW7159A
Absolute Maximum Ratings (Cont.)
Symbol
(Note 1)
Parameter
PGND to GND Voltage
PD
Power Dissipation
TSDR
Unit
-0.3 ~ 0.3
V
Internally Limited
Maximum Junction Temperature
TSTG
Rating
Storage Temperature
Maximum Lead Soldering Temperature, 10 Seconds
W
150
o
-65 ~ 150
o
260
o
C
C
C
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Thermal Characteristics
Symbol
θJA
Parameter
Junction-to-Ambient Thermal Resistance in Free Air (Note 2)
SOP-20
Typical Value
Unit
100
°C/W
Note 2: θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.
Recommended Operating Conditions (Note 3)
Symbol
VVCC
VIN1/VIN2
Parameter
Input Bias Supply Voltage (VCC to GND)
Converter Input Voltage
VOUT1/VOUT2 Converter Output Voltage
IOUT1/IOUT2
Converter Output Current
Range
Unit
10 ~ 13.2
V
2 ~ 13.2
V
1 ~ VIN1/VIN2
V
0 ~ 30
A
TA
Ambient Temperature
-40 ~ 85
o
TJ
Junction Temperature
-40 ~ 125
o
C
C
Note 3 : Refer to the typical application circuit
Electrical Characteristics
Unless otherwise specified, these specifications apply over VIN=12V, VOUT= 3.3V and TA= -40 ~ 85 oC. Typical values are at TA=25oC.
Symbol
Parameter
APW7159A
Test Conditions
Unit
Min.
Typ.
Max.
SUPPLY CURRENT
IVCC
VCC Supply Current (Shutdown
Mode)
VVCC<5V, SS=GND
-
0.5
1
mA
VCC Supply Current (Shutdown
Mode)
5V< VVCC <9V, SS=GND
-
0.8
1.6
mA
VCC Supply Current
UGATE1/UGATE2 and
LGATE1/LGATE2 open
-
5
10
mA
9
9.5
10
V
Falling VCC Threshold 1
7.5
8
8.5
V
Falling VCC Threshold 2
-
4.6
-
V
Rising VOCSET1/VOCSET2 Threshold
-
1.6
-
V
Falling VOCSET1/VOCSET2 Threshold
-
1.0
-
V
POWER-ON-RESET (POR) AND LOCKOUT VOLTAGE THRESHOLDS
Rising VCC Threshold
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
3
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APW7159A
Electrical Characteristics (Cont.)
Unless otherwise specified, these specifications apply over VIN=12V, VOUT= 3.3V and TA= -40 ~ 85 oC. Typical values are at TA=25oC.
Symbol
Parameter
APW7159A
Test Conditions
Unit
Min.
Typ.
Max.
OSCILLATOR
FOSC
VOSC
Free Running Frequency
RT = NC, VVCC =12V
45
50
55
kHz
Programmable Frequency Range
Connect Resistor from RT to GND
45
-
400
kHz
Total Frequency Accuracy
Over-Temperature
-10
-
10
%
Ramp Amplitude (Note 4)
-
1.9
-
V
Duty Cycle
0
-
100
%
-
1.0
-
V
-0.8
-
+0.8
%
-
0.01
-
%/A
RL=10kΩ, CL=10pF (Note 4)
-
88
-
dB
(Note 4)
-
15
-
MHz
Slew Rate (Note 4)
RL=10kΩ, CL=10pF (Note 4)
-
6
-
V/µs
FB1/FB2 Input Current
VFB1/VFB2=1.0V
-
-
0.1
µA
COMP1/COMP2 Source Current
VCOMP=2V
-
5
-
mA
COMP1/COMP2 Sink Current
VCOMP=2V
-
5
-
mA
REFERENCE VOLTAGE
VREF
Reference Voltage
Reference Voltage Tolerance
Load Regulation
VVCC=10V~13.2V
(Note 4)
IOUT1= IOUT2=0A~10A
PWM ERROR AMPLIFIERS
Open Loop Gain (Note 4)
Unity-Gain Bandwidth
(Note 4)
RL=10kΩ, CL=10pF
BOOT-STRAP DIODE AND SOFT-START
VF
Diode Forward Voltage
ISS
Soft-Start Charge Current
IF=10mA
-
0.8
-
V
24
30
36
µA
GATE DRIVERS
IUGATE1/
IUGATE2
ILGATE1/
ILGATE2
High Side Gate Source Current
VBOOT1=VBOOT2=12V,
VUGATE1-VPHASE1=2V/VUGATE2 – VPHASE2=2V
-
1.7
-
A
High Side Gate Sink Current
VBOOT1=VBOOT2=12V, VUGATE1-VPHASE1=
10V/VUGATE2 – VPHASE2=10V
-
1.1
-
A
Low Side Gate Source Current
VVCC=12V, VLGATE1=VLGATE2=2V
-
1.9
-
A
VVCC=12V,VLGATE1= VLGATE2=10V
-
1.6
-
A
-
40
-
ns
-
40
-
ns
180
200
220
µA
Low Side Gate Sink Current
Dead Time 1
UGATE1/UGATE2 Falling to
LGATE1/LGATE2 Rising
LGATE1/LGATE2 Falling to
UGATE1/UGATE2 Rising
(Note 4)
Dead Time 2 (Note 4)
PROTECTION
IOCSET1/
IOCSET2
OCSET1/OCSET2 Current Source
Over Voltage Protection
Measure on FB1/FB2
115
120
125
%VREF
Under Voltage Protection
Measure on FB1/FB2
45
50
55
%VREF
-
150
-
o
-
o
Over-Temperature Shutdown
Over-Temperature Hysteresis
(Note 4)
(Note 4)
-
40
C
C
Note 4: Guarantee by design, not production test
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
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APW7159A
Typical Operating Characteristics
Reference Voltage vs. Junction
Temperature
Switching Frequency vs. Junction
Temperature
1003
55
54
Switching Frequency (kHz)
Reference Voltage (mV)
1002
1001
1000
999
998
997
996
-40 -20
0
20
40
60
52
51
50
49
48
47
46
45
-40 -20
80 100 120
Junction Temperature
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
53
0
20
40
60
80 100 120
Junction Temperature
5
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APW7159A
Operating Waveforms
Refer to the typical application circuit. The test condition is VIN=12V, TA= 25oC unless otherwise specified.
Power On
Power Off
VIN1= VIN2=VVCC , IOUT=0mA
VIN1= VIN2=Vvcc
1
1
VOUT1
VOUT2
VOUT1
2
2
VOUT2
3
3
CH1: VIN1=VIN2=VVCC, 5V/Div
CH2: VOUT1, 2V/Div
CH3: VOUT2, 2V/Div
Time: 2ms/Div
CH1: VIN1=VIN2=VVCC, 5V/Div
CH2: VOUT1, 2V/Div
CH3: VOUT2, 2V/Div
Time: 5ms/Div
Enable
Shutdown
R LOAD1=R LOAD2 =10Ω
VSS
1
1
V SS
VOUT1
VOUT1
2
2
VOUT2
VOUT2
3
3
CH1: VSS, 5V/Div
CH2: VOUT1, 2V/Div
CH3: VOUT2, 2V/Div
Time: 2ms/Div
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
CH1: VSS, 5V/Div
CH2: VOUT1, 2V/Div
CH3: VOUT2, 2V/Div
Time: 10ms/Div
6
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APW7159A
Operating Waveforms (Cont.)
Refer to the typical application circuit. The test condition is VIN=12V, TA= 25oC unless otherwise specified.
Short-Circuit Protection
Over-Current Protection
ROCSET=1kΩ, RDS (high-side)=10mΩ
VIN=Vvcc
VIN=V VCC
1
1
VOUT
VOUT
2
2
3
3
VPHASE
VPHASE
IL
4
4
IL
CH1: VIN=VVCC, 10V/Div
CH2: VOUT, 2V/Div
CH3: VPHASE, 10V/Div
CH4: IL, 10A/Div
Time: 50µA/Div
CH1: VIN=VVCC, 10V/Div
CH2: VOUT, 2V/Div
CH3: VPHASE, 10V/Div
CH4: IL, 10A/Div
Time: 10ms/Div
UGATE Falling
IOUT =10A
UGATE Rising
IOUT =10A
VLGATE
VLGATE
VUGATE
VUGATE
1,2
1,2
VPHASE
VPHASE
3
3
CH1: VUGATE, 10V/Div
CH2: VLGATE, 5V/Div
CH3: VPHASE, 10V/Div
Time: 20ns/Div
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
CH1: VUGATE, 10V/Div
CH2: VLGATE, 5V/Div
CH3: VPHASE, 10V/Div
Time: 20ns/Div
7
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APW7159A
Operating Waveforms (Cont.)
Refer to the typical application circuit. The test condition is VIN=12V, TA= 25oC unless otherwise specified.
Load Transient Response
Load Transient Response
VIN2=VVCC =12V, VOUT2=3.3V
VIN1=VVCC =12V, VOUT1=5V
IOUT2 slew rate=10A/µs
IOUT1 slew rate=10A/µs
VOUT1
VOUT2
1
1
I OUT1
IOUT2
2
2
CH1: VOUT2, 200mV/Div
CH1: VOUT1, 200mV/Div
CH2: IOUT2, 5A/Div
Time: 100µs/Div
CH2: IOUT1, 5A/Div
Time: 100µs/Div
Pin Description
PIN
FUNCTION
NO.
NAME
1
FB1
Feedback Input of Channel 1. The Buck converter senses feedback voltage via FB1 and regulates the
FB1 voltage at 1.0V. Connecting FB1 with a resistor-divider from the output sets the output voltage of
the Buck converter.
2
COMP1
Error Amplifier Output of Channel 1. It is used to compensate the regulation control loop. Refer to the
section “Application Information” for details.
3
OCSET1
This pin is used to set the maximum inductor current of channel 1. Refer to the section in “Function
Description” for detail.
4
GND
Signal Ground.
5
VCC
Power Supply Input. Connect a nominal 10V to 13.2V power supply voltage to this pin. A
power-on-reset function monitors the input voltage at this pin. It is recommended that a decoupling
capacitor (1 to 10µF) should be connected to the GND for noise decoupling.
6
BOOT1
This pin provides the bootstrap voltage to the high-side gate driver for driving the N-channel MOSFET.
An external capacitor from PHASE1 to BOOT1, an internal diode, and the power supply voltage VCC,
generate the bootstrap voltage for the high-side gate driver (UGATE1).
7
UGATE1
High-Side Gate Driver Output of Channel 1. This pin is the gate driver for high-side MOSFET.
8
PHASE1
This pin is the return path for the high-side gate driver 1. Connect this pin to the high-side MOSFET
source and connect a capacitor to BOOT1 for the bootstrap voltage. This pin is also used to monitor
the voltage drop across the MOSFET for over-current protection.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
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APW7159A
Pin Description (Cont.)
PIN
FUNCTION
NO.
NAME
9
LGATE1
10
PGND
Low-side Gate Driver Output of channel 1. This pin is connected to low-side MOSFET.
Power Ground of the Low-Side Gate Drivers. Use a separate track to connect this pin to Source of the
low-side MOSFET. The Source of the low-side MOSFET must be connected to system ground with
very low impedance. Connecting this pin to the GND.
11
NC
12
LGATE2
Low-side Gate Driver Output of channel 2. This pin is the gate driver for low-side MOSFET.
13
PHASE2
This pin is the return path for the high-side gate driver of channel 2. Connect this pin to the high-side
MOSFET source and connect a capacitor to BOOT2 for the bootstrap voltage. This pin is also used to
monitor the voltage drop across the MOSFET for over-current protection.
14
UGATE2
High-side Gate Driver Output of Channel 2. This pin is connected to high-side MOSFET.
15
BOOT2
This pin provides the bootstrap voltage to the high-side gate driver for driving the N-channel
MOSFET. An external capacitor from PHASE2 to BOOT2, an internal diode, and the power supply
voltage VCC, generate the bootstrap voltage for the high-side gate driver (UGATE2).
16
OCSET2
This pin is used to set the maximum inductor current of channel 2. Refer to the section in “Function
Description” for detail.
17
COMP2
Error Amplifier Output of Channel 2. It is used to compensate the regulation control loop. Refer to the
section “Application Information” for details.
18
FB2
Feedback Input of Channel 2. The converter senses feedback voltage via FB2 and regulates the FB2
voltage at 1.0V. Connecting FB2 with a resistor-divider from the output sets the output voltage of the
Buck converter.
19
SS
Connect a capacitor to the GND and a 30µA current source charges this capacitor to set the soft-start
time. The pin also integrates EN/Shutdown function. Pulling SS below 0.7V shuts down the IC.
20
RT
This pin allows adjusting the switching frequency. Connect a resistor from RT to the ground to
increase the switching frequency.
-
No Connection.
Exposed Pad Connect the pad to the system ground plane on PCBs. The PCB will be a heat sink of the IC.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
9
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APW7159A
Block Diagram
VCC
Regulator
Power-OnReset
I SS
(30µA typ.)
V REF
SS
(1.0V typ.)
OCSET2
OCSET1
I OCSET2
I OCSET1
BOOT2
BOOT1
UGATE2
Over-Current
Comparator
2
15k
PHASE2
Soft-Start
and
Fault Logic
UGATE1
Over-Current
Comparator
1
15k
PHASE1
VCC
VCC
Gate
Control
LGATE2
Gate
Control
LGATE1
15k
15k
Over-Voltage
Comparator
2
PGND2
Over-Voltage
Comparator
1
1.2
Under-Voltage
Comparator
1
Under-Voltage
Comparator
2
PGND1
1.2
0.5
0.5
FB2
FB1
VREF
Error
Amplifier
2
PWM
Comparator
2
PWM
Comparator
1
Error
Amplifier
1
V REF
COMP2
COMP1
Oscillator
RT
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
10
GND
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APW7159A
Typical Application Circuit
2k
2k
10µF
1µF
1µF
1nF
(option)
100nF
VOUT1
5V/30A
L1
7.2µH
2200µFx2
ESR=30mΩ
4R7
BOOT1
BOOT2
UGATE1
UGATE2
PHASE1
PHASE2
(option)
LGATE1
LGATE2
PGND
VVCC
VOUT2
3.3V/30A
2200µFx2
ESR=30mΩ
4R7
1.5nF
COMP2
33nF
APW7159
6.8nF
L2
7.2µH
(option)
33nF
12k
1k
APM3106
PGND
COMP1
12k
470µF
APM3109
APM3106
10µF
1nF
(option)
100nF
APM3109
1.5nF
15nF
VIN
OCSET2
OCSET1
6.8nF
12k
12k
FB1
FB2
VCC
RT
GND
SS
15nF
1k
5R1
3k
5.2k
1µF
47nF
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
11
RT
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APW7159A
Function Description
VCC Power-On-Reset (POR)
VSS
Voltage
The Power-On-Reset (POR) function of APW7159A continually monitors the voltage on VCC and OCSET1/
OCSET2 pin. When the voltage on VCC and OCSET1/
OCSET2 exceeds their rising POR threshold voltage respectively (9.5V and 1.6V typical), the POR function ini-
1.4
tiates soft-start operation. Where the voltage at OCSET1/
OCSET2 pin is equal to VIN1/VIN2 minus a fixed voltage
1
VFB
1
drop (VOCSET1/VOCSET2 = VIN1/VIN2 – V ROCSET1/VROCSET2). For operation with a single +12V power source, VIN1/VIN2 and
VFB2
VCC are equivalent and the +12V power source must
exceed the rising VCC threshold. With all input supplies
t0
t1
t2
t3
t4
Time
Figure 1. Soft-start timing sequence
above their POR thresholds, the device initiates a softstart interval.
Soft-Off (5V<VCC<9V) (Note 5)
Soft-Start
The APW7159A also integrates a soft-off circuitry. When
the voltage on VCC falls below the falling threshold1 (8V
The SS pin controls the soft-start and enables/disables
the controller. Connect a soft-start capacitor from SS pin
typical), an internal current source, I SS (30µA typical), starts
to discharge from SS. When the VVCC falls below the fall-
to GND to set the soft-start interval. Figure1 shows the
soft-start interval. When VCC reaches its Power-On-Re-
ing threshold2 (4.6V typical), the device is shutdown. The
APW7159A will initiate a soft-start process until re-cycle
set threshold (9.5V typical), a soft-start current source, ISS
(30µA typical), starts to charge the capacitor. When the
power supply (9.5V typical).
VSS reaches the threshold about 1V, the internal 1.0V reference starts to rise and follows the VSS; the error ampli-
Over-Temperature Protection (OTP)
Note 5: The mentioned soft-off function is patent pending by ANPEC
The over-temperature circuit limits the junction temperature of the APW7159A. When the junction temperature
fier output (V COMP) suddenly rises to 1.1V, which is the
valley of the triangle wave of the oscillator, leads the VOUT1/
exceeds 150oC, a thermal sensor pulls UGTAE1/UGATE2
and LGATE1/LGATE2 low, allowing the devices to cool.
VOUT2 to start up. VOUT1 and VOUT2 have power on sequence
issue, VOUT2 will start up after VSS rise up to 1.4V. The soft-
The thermal sensor allows the converters to start a softstart process and to regulate the output voltage again
start time can be calculated as below:
TSOFT −START = t 3 − t1 = t 4 − t 2 =
CSS
⋅ 1V
ISS
after the junction temperature cools by 40oC. The OTP is
designed with a 40oC hysteresis to lower the average
Where
CSS = external capacitor connected at SS pin
Junction Temperature (TJ ) during continuous thermal
overload conditions, increasing the lifetime of the device.
ISS = soft-start current, typical ISS current is 30µA
The APW7159A does not have EN pin, pull SS low (SS
Over-Current Protection
<0.7V) shut down the IC.
The over-current function protects the switching converter
against over-current or short-circuit conditions. The controller senses the inductor current by detecting the drainto-source voltage, which the product of the inductor’s current and high side MOSFET on-resistance during it’s onstate. This method enhances the converter’s efficiency
and reduces cost by eliminating a current sensing resistor required.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
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APW7159A
Function Description (Cont.)
Over-Current Protection (Cont.)
Over-Voltage Protection
A resistor (ROCSET1/ROCSET2) connected between OCSET1/
The over-voltage protection monitors the FB voltage to
prevent the output from over-voltage. When the output
OCSET2 pin and the drain of the upper MOSFET will determine the over-current limit. An internal current source
voltage rises to 120% of the nominal output voltage, the
APW7159A turns off all devices. The APW7159A will ini-
will flow through this resistor, creating a voltage drop,
which will be compared with the voltage across the up-
tiate a soft-start process until re-cycle power supply.
per MOSFET. When the voltage across the upper MOSFET
exceeds the voltage drop across the ROCSET1/ROCSET2, the
Adaptive Shoot-Through Protection
The gate driver incorporates adaptive shoot-through protection to high-side and low-side MOSFETs from con-
IC shuts off the entire gate drives. After a soft-start period
delay, the APW7159A initiates a new soft-start process.
ducting simultaneously and shorting the input supply.
This is accomplished by ensuring the falling gate has
After 3 times over-current events are counted continuously,
all devices and gate drivers (UGATE1/UGATE2/LGATE1/
turned off one MOSFET before the other is allowed to
rise.
LGATE2) were shutdown. Both outputs of the PWM converter are latched to be floating. The threshold of the over-
During turn-off of the low-side MOSFET, the LGATE1/
LGATE2 voltage is monitored until it reaches a 1.6V
current limit is therefore given by :
ILIMIT =
IOCSET ⋅ ROCSET
RDS( ON) (high − side )
threshold, at which time the UGATE is released to rise
after a constant delay. During turn-off of the high-side
For the over-current is never occurred in the normal operating load range; the variation of all parameters in the
MOSFET, the UGATE1/UGATE2 to PHASE1/PHASE2 voltage is also monitored until it reaches a 1.6V threshold, at
above equation should be determined.
- The MOSFET’s RDS(ON) is varied by temperature and
which time the LGATE1/LGATE2 is released to rise after
gate to source voltage, the user should determine the
maximum RDS(ON) in manufacturer’s datasheet.
Pre-Bias Power-On
-The minimum IOCSET1/IOCSET2 (typical 200µA) and minimum R OCSET1 /R OCSET2 should be used in the above
voltage will smoothly rising without discharged even the
voltage is not zero.
a constant delay.
When the APW7159A initiates the soft-start, the output
equation.
-Note that the ILIMIT is the current flow through the upper MOSFET; ILIMIT must be greater than maximum output
Switching Frequency
The APW7159A provides the oscillator switching frequency adjustment. The device includes a 50kHz free-
current add the half of inductor ripple current.
The over-current protection will shut down the device and
running triangle wave oscillator. If operates in higher frequency than 50kHz, connect a resistor from RT pin to the
discharge the CSS with a 30µA sink current. If the ROCSET1/
ROCSET2 is not connected or VOCSET1/VOCSET2 is below 1.6V,
ground to increase the switching frequency. Equation 1
and figure 2 shows the relationship between oscillation
the APW7159A will not initiate soft-start process and force
device shutdown.
frequency and RT resistance.
FOSC (kHz ) = 50 +
Under-Voltage Protection
The under-voltage function monitors the voltage on FB by
Under-Voltage comparator to protect the PWM converter
7550
R T (kΩ )
against short-circuit conditions. When the VFB falls below
the falling UVP threshold (50% VREF), a fault signal is internally generated and the device turns off high-side
and low-side MOSFETs. The converter is shutdown and
the output is latched to be floating.
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APW7159A
Function Description (Cont.)
Switching Frequency (Cont.)
Oscillator Frequency vs. RT Resistance
Oscillator Frequency (kHz)
700
600
500
400
300
200
100
0
0
100
200
300
400
500
600
RT Resistance (k)
Figure 2. Oscillator Frequency vs. RT Resistance
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APW7159A
Application Information
Output Voltage Selection
Output Capacitor Selection
The output voltage can be programmed with a resistive
divider. Use 1% or better resistors for the resistive divider
Higher capacitor value and lower ESR reduce the output
ripple and the load transient drop. Therefore, selecting high
is recommended. The FB pin is the inverter input of the
error amplifier, and the reference voltage is 1V. The out-
performance low ESR capacitors is intended for switching regulator applications. In some applications, mul-
put voltage is determined by:
tiple capacitors have to be parallelled to achieve the
desired ESR value. A small decoupling capacitor in

R
VOUT = 1× 1 + OUT
R GND





parallel for bypassing the noise is also recommended,
and the voltage rating of the output capacitors also must
be considered. If tantalum capacitors are used, make
sure they are surge tested by the manufactures. If in doubt,
Where ROUT is the resistor connected from VOUT to FB and
RGND is the resistor connected from FB to the GND.
consult the capacitors manufacturer.
Output Inductor Selection
Input Capacitor Selection
The input capacitor is chosen based on the voltage rating
The inductor value determines the inductor ripple current
and affects the load transient response. Higher inductor
value reduces the inductor’s ripple current and induces
and the RMS current rating. For reliable operation, select
the capacitor voltage rating to be at least 1.3 times higher
lower output ripple voltage. The ripple current and ripple
voltage can be approximated by:
IRIPPLE =
than the maximum input voltage. The RMS current of the
bulk input capacitor is calculated as the following equation:
VIN − VOUT VOUT
×
FS × L
VIN
IRMS = IOUT ⋅ D ⋅ (1 − D )
∆VOUT = IRIPPLE × ESR
During power up, the input capacitors have to handle
large amount of surge current. If tantalum capacitors are
where Fs is the switching frequency of the regulator.
used, make sure they are surge tested by the
manufactures. If in doubt, consult the capacitors
Although increase of the inductor value and frequency
reduces the ripple current and voltage, a tradeoff will
manufacturer. For high frequency decoupling, a ceramic
capacitor 1µF can be connected between the drain of
exist between the inductor’s ripple current and the
regulator load transient response time.
upper MOSFET and the source of lower MOSFET.
A smaller inductor will give the regulator a faster load
MOSFET Selection
transient response at the expense of higher ripple current.
Increasing the switching frequency (FS) also reduces the
The selection of the N-channel power MOSFETs are
determined by the RDS(ON), reverse transfer capacitance
ripple current and voltage, but it will increase the
switching loss of the MOSFET and the power dissipation
(CRSS) and maximum output current requirement. There
are two components of loss in the MOSFETs: conduction
of the converter. The maximum ripple current occurs at
the maximum input voltage. A good starting point is to
loss and transition loss. For the upper and lower
MOSFET, the losses are approximately given by the fol-
choose the ripple current to be approximately 30% of
the maximum output current. Once the inductance value
lowing equations:
2
PUPPER = IOUT ( 1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FS
has been chosen, select an inductor is capable of carrying the required peak current without going into
2
PLOWER = IOUT (1+ TC)(RDS(ON))(1-D)
saturation. In some types of inductors, especially core
that is made of ferrite, the ripple current will increase
Where IOUT is the load current
TC is the temperature dependency of RDS(ON)
abruptly when it saturates. This will result in a larger output ripple voltage.
FS is the switching frequency
tSW is the switching interval
D is the duty cycle
Copyright  ANPEC Electronics Corp.
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APW7159A
Application Information (Cont.)
MOSFET Selection (Cont.)
Note that both MOSFETs have conduction loss while the
upper MOSFET includes an additional transition loss.
The PWM modulator is shown in Figure 5. The input is
the output of the error amplifier and the output is the
PHASE node. The transfer function of the PWM modulator
is given by:
VIN
GAINPWM =
∆VOSC
V IN
The switching internal, tSW , is the function of the reverse
transfer capacitance C RSS. The (1+TC) term is to factor
in the temperature dependency of the RDS(ON) and can be
extracted from the “RDS(ON) vs Temperature” curve of the
power MOSFET.
OSC
PWM Compensation
ΔV OSC
The output LC filter of a step down converter introduces a
double pole, which contributes with -40dB/decade gain
Figure 5. The PWM Modulator
The compensation network is shown in Figure 6. It
provides a close loop transfer function with the highest
tor and output capacitors. The transfer function of the LC
filter is given by:
1
FESR =
2 × π × ESR × COUT
zero crossover frequency and sufficient phase margin.
The transfer function of error amplifier is given by:
1 
1 
//  R2 +

VCOMP
sC1 
sC2 
GAINAMP =
=
1 
VOUT

R1//  R3 +

sC3


The FLC is the double poles of the LC filter, and FESR is the
zero introduced by the ESR of the output capacitor.
V OUT

1
1

 
s +
 ×  s +

R2
C2
R1
R3
C3
(
+
)
×
×
R1 + R3

 

=
×
C1 + C2  
1
R1× R3 × C1 

s s +

× s +
R2 × C1× C2  
R3 × C3 

C OUT
ESR
The poles and zeros of the transfer function are:
1
FZ1 =
2 × π × R2 × C2
1
FZ2 =
2 × π × (R1 + R3) × C3
1
FP1 =
 C1× C2 
2 × π × R2 × 

 C1 + C2 
Figure 3. The Output LC Filter
FLC
-40dB/dec
GAIN (dB)
PHASE
Driver
should be added. The compensation network is shown in
Figure 6. The output LC filter consists of the output induc-
L
PWM
Comparator
Output of
Error Amplifier
slope and 180 degrees phase shift in the control loop. A
compensation network among COMP, FB, and V OUT
V PHASE
Driver
FP2 =
FESR
1
2 × π × R3 × C3
C1
-20dB/dec
R3
C3
R2
C2
V OUT
R1
Frequency(Hz)
V COMP
V REF
Figure 4. The LC Filter GAIN and Frequency
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
FB
Figure 6. Compensation Network
16
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APW7159A
Application Information (Cont.)
PWM Compensation (Cont.)
The closed loop gain of the converter can be written as:
The poles and zero of this transfer functions are:
FLC =
GAINLC X GAINPWM X GAINAMP
Figure 7. shows the asymptotic plot of the closed loop
R3 =
R1
FS
−1
2 × FLC
C3 =
1
π × R3 × FS
converter gain, and the following guidelines will help to
design the compensation network. Using the below
guidelines should give a compensation similars to the
curve plotted. A stable closed loop has a -20dB/ decade
1
2 × π × L × COUT
slope and a phase margin greater than 45 degree.
1. Choose a value for R1, usually between 1K and 5K.
FZ1 FZ2
2. Select the desired zero crossover frequency
FP1
FP2
GAIN (dB)
FO: (1/5 ~ 1/10) X FS >FO>FESR
Use the following equation to calculate R2:
∆VOSC FO
R2 =
×
× R1
VIN
FLC
Compensation
Gain
20log
(R2/R1)
20log
(VIN/ΔVOSC)
3. Place the first zero FZ1 before the output LC filter double
pole frequency FLC.
FLC
FZ1 = 0.75 X FLC
FESR
Calculate the C2 by the equation:
1
C2 =
2 × π × R2 × FLC × 0.75
PWM & Filter
Gain
Converter
Gain
Frequency(Hz)
Figure 7. Converter Gain and Frequency
4. Set the pole at the ESR zero frequency FESR:
FP1 = FESR
Layout Consideration
Calculate the C1 by the equation:
C2
C1 =
2 × π × R2 × C2 × FESR − 1
In any high switching frequency converter, a correct layout is important to ensure proper operation of the
5. Set the second pole FP2 at the half of the switching
regulator. With power devices switching at 200kHz, the
resulting current transient will cause voltage spike across
frequency and also set the second zero FZ2 at the output LC
filter double pole FLC. The compensation gain should not
the interconnecting impedance and parasitic circuit
elements. As an example, consider the turn-off transition
exceed the error amplifier open loop gain, check the
compensation gain at FP2 with the capabilities of the error
of the PWM MOSFET. Before turn-off, the MOSFET is carrying the full load current. During turn-off, current stops
amplifier.
flowing in the MOSFET and is free-wheeling by the lower
MOSFET and parasitic diode. Any parasitic inductance of
FP2 = 0.5 X FS
the circuit generates a large voltage spike during the
switching interval. In general, using short and wide printed
FZ2 = FLC
Combine the two equations will get the following component
circuit traces should minimize interconnecting impedances and the magnitude of voltage spike. And signal
calculations:
GAINLC =
1 + s × ESR × COUT
s × L × COUT + s × ESR × COUT + 1
and power grounds are to be kept separating till combined using the ground plane construction or single point
2
grounding. Figure 8. illustrates the layout, with bold lines
Copyright  ANPEC Electronics Corp.
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APW7159A
Application Information (Cont.)
Layout Consideration (Cont.)
Close to IC
APW7159A
indicating high current paths; these traces must be short
and wide. Components along the bold lines should be
VIN
GND
placed lose together. Below is a checklist for your layout:
- Keep the switching nodes (UGATE, LGATE, and PHASE)
VCC
OCSET
away from sensitive small signal nodes since these
nodes are fast moving signals. Therefore, keep traces
BOOT
to these nodes as short as possible.
- The traces from the gate drivers to the MOSFETs (UGATE
UGATE
ROCSET
L
O
A
D
PHASE
and LGATE) should be short and wide.
- Place the source of the high-side MOSFET and the drain
LGATE
of the low-side MOSFET as close as possible. Minimizing the impedance with wide layout plane between the
two pads reduces the voltage bounce of the node.
- Decoupling capacitor, compensation component, the
VOUT
Figure 8. Layout Consideration
resistor dividers, and boot capacitors should be close
their pins. (For example, place the decoupling ceramic
capacitor near the drain of the high-side MOSFET as
close as possible. The bulk capacitors are also placed
near the drain).
- The input capacitor should be near the drain of the upper MOSFET; the output capacitor should be near the
loads. The input capacitor GND should be close to the
lower MOSFET GND.
- The drain of the MOSFETs (VIN and PHASE nodes)
should be a large plane for heat sinking.
- The ROCSET resistance should be placed near the IC as
close as possible.
- The decoupling capacitor for VCC should be placed
near the VCC and GND. CBOOT should be connected as
close to the BOOT and PHASE pins as possible.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
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APW7159A
Package Information
SOP-20
D
h X 45o
E
E1
SEE VIEW A
e
c
A
L
0
GAUGE PLANE
SEATING PLANE
A1
A2
0.25
b
VIEW A
S
Y
M
B
O
L
SOP-20
MILLIMETERS
INCHES
MIN.
MAX.
A
2.65
A1
0.10
0.30
A2
2.05
b
0.31
0.51
0.012
0.020
c
0.20
0.33
0.008
0.013
D
12.60
13.00
0.496
0.512
0.413
0.299
MIN.
0.104
0.012
0.004
0.081
E
10.10
10.50
0.398
E1
7.40
7.60
0.291
e
MAX.
1.27 BSC
0.050 BSC
h
0.25
0.75
0.010
0.030
L
0.40
1.27
0.016
0.050
0
0o
8o
0o
8o
Note : 1. Follow from JEDEC MS-013 AC.
2. Dimension "D" does not include mold flash, protrusions
or gate burrs. Mold flash, protrusion or gate burrs shall not
exceed 6 mil per side.
3. Dimension "E" does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
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APW7159A
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
SOP-20
A
H
330.0±2.00
50 MIN.
P0
P1
4.0±0.10
12.0±0.10
T1
C
24.40+2.00 13.0+0.50
-0.00
-0.20
P2
D0
2.0±0.10
1.5+0.10
-0.00
d
D
W
E1
F
1.5 MIN.
20.2 MIN.
24.0±0.30
1.75±0.10
11.5±0.10
D1
T
A0
B0
K0
1.5 MIN.
0.6+0.00
-0.40
10.9±0.20
13.3±0.20
3.1±0.20
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-20
Tape & Reel
1000
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APW7159A
Taping Direction Information
SOP-20
USER DIRECTION OF FEED
Classification Profile
Copyright  ANPEC Electronics Corp.
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APW7159A
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
<2.5 mm
≥2.5 mm
Volume mm
<350
235 °C
220 °C
3
Volume mm
≥350
220 °C
220 °C
3
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
Volume mm
350-2000
260 °C
250 °C
245 °C
3
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
HBM
MM
Latch-Up
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2009
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
MIL-STD-883-3015.7
JESD-22, A115
JESD 78
22
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
VHBM≧2KV
VMM≧200V
10ms, 1tr≧100mA
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APW7159A
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
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