APW8733

APW8733
Dual-Phase COT Buck PWM Controller with Dynamic Voltage
Features
General Description
•
High Input Battery Voltages Range from 1.8V to
The APW8733 is a dual-phase PWM control IC which
25V Input Power
provides a precision voltage regulation system for advanced graphic card and motherboard applications. The
•
Multiform Purpose Input Voltage Collocation: VCC
integration of dual-phase power MOSFET drivers into the
controller IC and reduces the number of external parts for
= 5V / VIN = 5.5V ~ 19V for NB MXM application
•
Built in VREF voltage = 2.0V +1% with all
a cost and space saving power management solution.
temperature range
•
External reference input with PWM VID Dynamic
The APW8733 uses a constant on time architecture
voltage control
control, and results in excellent transient response and
accurate DC voltage output in either PFM or PWM Mode.
•
Integrated Bootstrap Forward P-CH MOSFET
•
Built in Adjustable Frequency by TON : 100KHz ~
In Pulse Frequency Mode (PFM), the APW8733 provides
very high efficiency over light to heavy loads with loading
800KHz range
•
modulated switching frequencies. In PWM Mode, the converter works nearly at constant frequency for low-noise
Built in Constant On Time PWM Control with
Current Sharing Operation
•
requirements. The device uses the voltage across the
low side R DS(ON) for current sensing achieves high
Built in External Soft-Start & Soft-Stop functions
for output voltage
•
efficiency. The device integrates adjustable load line voltage positioning (droop) and adopts low side RDS(ON) for
Support Single and Two phases PWM Control by
channel-current balance. The APW8733 also implement
a VID control operation in which the feedback voltage is
LGATE2 & PSI voltage setting
•
Built in Programmable OCP function by Sensing
regulated and tracks external input reference voltage. This
controller protection features include over-temperature
Low Side MOSFET
•
Built in UVP (50%), OVP(145%) & Thermal
(OTP), over-voltage (OVP), under-voltage (UVP) and overcurrent protections (OCP). The device also provides a
Shutdown functions on PWM Channel
•
Built in PGOOD indicator for output voltage
•
Built in POR Control Scheme Implemented at 4.
power-on-reset function and a external programmable
soft-start to prevent wrong operation and limit the input
25V ~ 4.45V range
•
Shutdown Control by EN using an External MOSFET
•
TQFN 3x3-20 Package
surge current during power-on or start-up. The APW8733
is available in TQFN 3x3-20 packages.
Applications
•
VGA
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
1
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APW8733
Simplified Application Circuit
5.0V
VREF
REFIN
VIN
VCC
PSI
UGATE1
VOUT
REFADJ
LGATE1
CLK
VID
OUT
VCC
PGOOD
UGATE2
VSNS
LGATE2
Ordering and Marking Information
Package Code
QB: TQFN3x3-20
APW8733
Operating Ambient Temperature Range
I : -40 to 85oC
Assembly Material
Handling Code
Temperature
Range
Package Code
APW8733 QB:
APW
8733
XXXXX
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
Copyright  ANPEC Electronics Corp.
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APW8733
Pin Configuration
PHASE1
LGATE1
VCC
LGATE2
PHASE2
20
19
18
17
16
BOOT1
1
15
BOOT2
UGATE1
2
14
UGATE2
EN
3
PSI
4
VID
5
(Exposed Pad)
GND
13
PGOOD
12
IOFS
11
VSNS
6
7
8
9
10
REFADJ
REFIN
VREF
TON
GNDSNS
TQFN3x3-20
Top View
= Thermal Pad (connected to GND plane for better heat dissipation)
Absolute Maximum Ratings (Note 1,2)
Symbol
VCC
VBOOT1/2
Parameter
Rating
Unit
VCC Supply Voltage (VCC to GND)
-0.3 ~ 7
V
BOOT1/2 to PHASE1/2 Voltage
-0.3 ~ 7
V
BOOT1/2 to GND Voltage
-0.3 ~ 44
V
> 400ns
-0.3 ~ VBOOT1/2 + 0.3
V
< 400ns
-5 ~ VBOOT1/2 + 0.3
V
> 400ns
-0.3 ~ VCC + 0.3
V
< 400ns
-5 ~ VCC + 0.3
V
> 400ns
-1 ~ 28
V
< 400ns
-5 ~ 35
V
EN, PSI, VID, REFADJ, REFIN, VREF, TON, GNDSNS, VSNS, IOFS
and PGOOD to GND Voltage
-0.3 ~ VCC + 0.3
V
PD
Power Dissipation
Internally Limited
TJ
Maximum Junction Temperature
VUGATE1/2
UGATE1/2 to PHASE1/2 Voltage
VLAGTE1/2
LGATE1/2 to GND Voltage
VPHASE1/2
PHASE1/2 to GND Voltage
W
150
o
C
TSTG
Storage Temperature
-65 ~ 150
o
TSDR
Maximum Lead Soldering Temperature (10 Seconds)
300
o
VESD
Minimum ESD Rating (Human Body Mode)
±2
C
C
kV
Note1: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability
Note 2: The device is ESD sensitive. Handling precautions are recommended.
Copyright  ANPEC Electronics Corp.
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APW8733
Thermal Characteristics (Note 3)
Symbol
θJA
Parameter
Junction-to-Ambient Resistance in free air
θJC
Typical Value
(Note3)
TQFN3x3-20
Junction-to-Case Resistance
TQFN3x3-20
Unit
60
o
8
o
C/W
C/W
Note 3: θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.
Recommended Operating Conditions (Note 4)
Symbol
VIN
Parameter
Range
Unit
Converter Input Voltage
1.8 ~ 25
V
VCC
VCC Supply Voltage (VCC to GND)
4.5 ~ 5.5
V
VOUT
VOUT to GND
0.2 ~ 4
V
IOUT
Converter Output Current
0 ~ 40
TA
Ambient Temperature
-40 ~ 85
o
TJ
Junction Temperature
-40 ~ 125
o
A
C
C
Note 4: Refer to the typical application circuit.
Electrical Characteristics
Refer to Figure. 1 in the “Typical Application Circuits”. These specifications apply over VIN = 12V, VCC = 5V, TA = 25oC, unless otherwise
noted. Typical values are at TA = 25oC.
Symbol
Parameter
Test Conditions
APW8733
Unit
Min
Typ
Max
4.5
-
5.5
V
SUPPLY CURRENT
Vcc
IVCC1
IVCC2
IVCC_SD
VCC Supply Voltage Range
VCC Supply Current
EN = high, VSNS > VREFIN = 1V, PSI = high,
RLG2SET = 4K
Phase1 and Phase2 are both non-switching.
-
500
700
µA
VCC Supply Current
EN = high, VSNS > VREFIN = 1V, PSI = high,
RLG2SET = 2K
Phase1 is non-switching.
Phase2 is shutdown.
-
300
500
µA
VCC Shutdown Current
No switching, EN = GND
3
10
µA
4.25
4.35
4.45
V
-
0.1
-
V
189
210
231
ns
POWER ON RESET (POR)
VPOR
POR Threshold of VCC
VPOR_HYST POR Hysteresis
PWM FREQUENCY SETTING
TON
On Time
VIN=19V, VOUT=1V, RTON=1MΩ
TON(MIN)
Minimum On Time
Over all temperature & VCC
80
110
140
ns
TOFF(MIN)
Minimum Off Time
VREFIN = 1V, VSNS = 0.9V, VPHASE = -0.1V
200
300
400
ns
BOOSTSTRAP SWITCH
VF
Forward Voltage
VCC - VBOOT1/2-GND, IF = 10mA
-
0.3
0.4
V
IR
Reverse Leakage current
VBOOT1/2-GND = 30V, VPHASE1/2 = 25V, VCC=5V
-
0.2
0.5
µA
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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APW8733
Electrical Characteristics
Refer to Figure. 1 in the “Typical Application Circuits”. These specifications apply over VIN = 12V, VCC = 5V, TA = 25oC, unless otherwise
noted. Typical values are at TA = 25oC.
S ymbol
Parame ter
APW 8733
Test Conditions
Unit
Min
Typ
Max
CHIP ENABLE
VENH
Ch ip Enab le Thr eshold
EN Risin g
1.2
-
-
V
V ENL
Ch ip Shutdown Threshol d
EN Fa lling
-
-
0.6
V
EN_LCD L eakage Curre nt
VCC = E N = 5V
-
0 .1
1
µA
PGO OD L eakage curren t
VPGOOD = 5V
-
0 .1
1.0
µA
PGO OD o utp ut low vo lta ge
I PGOOD _SIN K = 4mA
0 .5
1.0
V
PGO OD d elay time
EN goes high to PGOO D go es hi gh
-
30 0
350
us
PGO OD Disabl e Deb ounce
time
VSNS be lows the Hysteresis o f 85%VREFIN
to P GOOD go es low
-
20
-
us
POWER GOOD INDICATOR
POWER SAVING MO DE
V PSI_ H
PSI Hig h Thre sh old Volta ge
VPSI Rising
0.9
1
1.1
V
VPSI_L
PSI Low Thre sh old Vo lta ge
VPSI Falli ng
0.54
0 .6
6.6
V
V LG2 _1
VLG2_1 Thresho ld Vo ltag e
(Note5)
0.54
0 .6
0 .66
V
V LG2 _2
VLG2_2 Thresho ld Vo ltag e
(Note5)
0 .9 675
1.07 5
1.182 5
V
V LG2 _3
VLG2_3 Thresho ld Vo ltag e
(Note5)
1.62
1 .8
1 .98
V
Two-Pha se with PWM to
Sing le-Ph ase with PFM
debo unce time
-
30 0
-
us
Two-Pha se with PWM to
Sing le-Ph ase with PWM
debo unce time
-
30 0
-
us
Two-Pha se with PWM to
Sing le-Ph ase with Ul tra -so nic
PFM de boun ce time
-
30 0
-
us
25
30
35
kHz
IL G2SET
Switchi ng Fr equen cy of
Ul tra -so nic PFM
EN = high, PSI = low, R LG2SET = 4K
Mo de Setting Current
Sou rce from LGATE2 Te rminals
230
24 0
250
µA
1.98
2.00
2 .02
V
REFE RE NCE VO LTAGE
VR EF
Re fe rence Volta ge Accuracy
I REF=100 uA, T A= -20 OC ~ 85O C
I REF
VREF Maximum Output Cu rrent
VREF = GND
-
5
-
mA
Re fe rence Volta ge Load
Re gulation
I REF=0~2mA
-5
-
5
mV
ΔVR EF
VREF Discharg e Resista nce
VREFIN O perating Rang e
RE FIN Inp ut Le akage Curren t
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
5
-
-
100
Ω
0.2
-
2
V
-
-
0.1
µA
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APW8733
Electrical Characteristics
Refer to Figure. 1 in the “Typical Application Circuits”. These specifications apply over VIN = 12V, VCC = 5V, TA = 25oC, unless otherwise
noted. Typical values are at TA = 25oC.
S ymbol
Parame ter
APW 8733
Test Conditions
Unit
Min
Typ
Max
-
20
-
SOFT-STOP
RSTOP
Soft Sto p Discharg e Resistance
VSNS to GND Resistan ce
Ω
VID CONTROL INPUT
VIH
Logic High Th reshold Le vel
1.2
-
-
V
VIL
Logic Low Th reshold Le vel
-
-
0.6
V
R REFADJ
IR EFADJ
VID Input Leakage Curr ent
VID = 3 .3V
-
-
1
µA
On Resistance of RE FA DJ
MO SFET
VID = High
-
20
-
Ω
Leakag e Cur rent o f REFADJ
Pin
VREFADJ = 2V, VID = GND
-
-
0.1
µA
REFADJ DRIV ING
TR
RE FADJ Rising Time
With 2 0pF L oad
-
5
10
ns
TF
RE FADJ Fal ling Time
With 2 0pF L oad
-
5
10
ns
Ri sin g and Falling Ed ge Delay
|T R-T F |
-0.5
-
0.5
ns
T PDR
Ri sin g P ropag ation Delay
50% VID to 50%V REFADJ wi th 20 pF Lo ad
-
10
-
ns
T PDF
Fa lling Pro pagation Dela y
50% VID to 50%V REFADJ wi th 20 pF Lo ad
-
10
-
ns
Propa gation Delay Error
|T PDR- TPD F|
-0.5
-
0.5
ns
-
27
-
ns
VPHASE1- GND
-5
-
5
mV
△ T PD
TU
Un it Pu lse Width
ZERO CURRE NT DETECT
VZC
Ze ro Cu rrent De te ct
PHASE CURRE NT SENSE
gm
Tr ans-condu ctance
Note5
-
1 .0
-
mA/V
V OFFSET
GM A mplifier Offset
Note5
-5
-
5
uV
100 kΩ from IOFS to V RE F
1.425
1 .5
1.575
V
100 kΩ from IOFS to G ND
0.475
0 .5
0.525
V
VIOFS
IO FS Voltage
GATE DRIV ER
R UG_SR C
Up per Sid e Gate Sourcing
I UGATE=100mA Sour cin g
-
2 .0
4.0
Ω
RU G_ SN K
Up per Sid e Gate Sinking
I UGATE=100mA Sinkin g
-
1 .5
3.0
Ω
R LG_SRC
Low S ide Ga te So urcing
I LGATE=100m A Sou rci ng
-
2 .0
4.0
Ω
Low S ide Ga te Sin kin g
I LGATE=100m A Sinkin g
R LG_SNK
T DT
De ad-time
I VSN S
VSNS Input Bias Cur rent
VSNS = 2V
VSNS Disch arge Resistance
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
6
-
1 .0
2.0
Ω
-
30
-
ns
-0.5
-
0.5
µA
-
-
20
Ω
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APW8733
Electrical Characteristics
Refer to Figure. 1 in the “Typical Application Circuits”. These specifications apply over VIN = 12V, VCC = 5V, TA = 25oC, unless otherwise
noted. Typical values are at TA = 25oC.
S ymbol
Parame ter
APW 8733
Test Conditions
Unit
Min
Typ
Max
140
14 5
150
%
-
2
-
us
40
50
60
%
-
2
-
us
110
12 0
130
µA
PROTECTION
Over Vo lta ge Protecti on (OVP )
VSNS-GNDSNS/VR EFIN-GND
OVP Debo unce time
Un der Voltage Protection (UVP)
VSNS-GND/VR EFIN-GN D
UV P De bounce time
IOCSET
OCP Settin g Cu rrent
Sou rce from LGATE1 Te rminals
OCP De boun ce time
Ma ximu m VOCSET Thresho ld
-
2
-
us
0.55
0 .6
-
V
OCP DA C Sa mp le De lay Time
(Note5)
-
50
-
us
OCP DA C Maximum Sample
Time
(Note5)
-
70
-
us
Over Temp erature Pro tection
(OTP)
-
15 0
-
o
Over Temp erature Hysteresis
-
30
-
o
C
C
Note 5: Guarantee by design, not production test.
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APW8733
Pin Description
PIN
NAME
FUNCTION
1
BOOT1
Bootstrap Supply for the floating high-side gate driver of channel 1. Connect the Bootstrap
capacitor between the BOOT1 pin and the PHASE1 pin to form a bootstrap circuit. The bootstrap
capacitor provides the charge to turn on the high-side MOSFET. Typical values for CBOOT1 range
from 0.1µF to 1µF. Ensure that CBOOT1 is placed near the IC.
2
UGATE1
Upper Gate Driver Output for channel 1. Connect this pin to the gate of high-side MOSFET. This
pin is monitored by the adaptive shoot-through protection circuitry to determine when the
high-side MOSFET has turned off.
3
EN
Enable input.
4
PSI
Power Saving Mode. Connect a resistor from PSI to GND to set the power saving mode
threshold current level. Connect this pin to VREF and RLG2SET >= 4K for always two phases
operation. Short this pin to ground for always single-phase operation. (refer to Table.1)
5
VID
VID Input. This pin is used to adjust reference voltage.
6
REFADJ
7
REFIN
External Reference Input. This is input pin of external reference voltage. Connect a voltage
divider from VREF to REFIN to GND to set the reference voltage.
8
VREF
Reference Voltage Output. This is the output pin of high precision 2V reference voltage. Bypass
this pin with a 1uF ceramic capacitor to GND.
9
TON
The Pin is Allowed to Adjust the Switching Frequency. Connect a resistor RTON from TON pin to
VIN.
10
GNDSNS
11
VSNS
Feedback Voltage. Output Voltage Feedback Pin. This pin is connected to the output voltage.
The PGOOD, UVP, and OVP circuits detect this signal to report output voltage status.
12
IOFS
Current Balance Adjustment. Connect a resistor from this pin to VREF or GND to adjust the
current sharing.
13
PGOOD
Open drain power good output.
14
UGATE2
Upper Gate Driver Output for channel 2. Connect this pin to the gate of high-side MOSFET. This
pin is monitored by the adaptive shoot-through protection circuitry to determine when the
high-side MOSFET has turned off.
15
BOOT2
Bootstrap Supply for the floating high-side gate driver of channel 2. Connect the Bootstrap
capacitor between the BOOT2 pin and the PHASE2 pin to form a bootstrap circuit. The bootstrap
capacitor provides the charge to turn on the high-side MOSFET. Typical values for CBOOT2 range
from 0.1μF to 1µF. Ensure that CBOOT2 is placed near the IC.
16
PHASE2
Switch Node for Channel 2. Connect this pin to the source of high-side MOSFET and the drain of
the low-side MOSFET. This pin is used as sink for UGATE2 driver. This pin is also monitored by
the adaptive shoot-through protection circuitry to determine when the high-side MOSFET has
turned off.
17
LGATE2
Low-side Gate Driver Output for Channel 2. Connect this pin to the gate of low-side MOSFET.
This pin is monitored by the adaptive shoot-through protection circuitry to determine when the
low-side MOSFET has turned off.
18
VCC
19
LGATE1
Low-side Gate Driver Output for Channel 1. Connect this pin to the gate of low-side MOSFET.
This pin is monitored by the adaptive shoot-through protection circuitry to determine when the
low-side MOSFET has turned off.
20
PHASE1
Switch Node for Channel 1. Connect this pin to the source of high-side MOSFET and the drain of
the low-side MOSFET. This pin is used as sink for UGATE1 driver. This pin is also monitored by
the adaptive shoot-through protection circuitry to determine when the high-side MOSFET has
turned off.
Exposed Pad
GND
Reference adjustment output.
GND Sense. Negative node of the remote voltage sense.
Supply Voltage. This pin provides current for internal control circuit. Bypass this pin with a
minimum 1uF ceramic capacitor next to the IC.
Ground. Tie this pin to the ground island/plane through the lowest impedance connection
available.
Copyright  ANPEC Electronics Corp.
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APW8733
Block Diagram
VREF
EN
VCC
Internal
Regulator
Power
On
Reset
IOFS
145%VREFIN
PGOOD
VSNS
VSNS
VID
85%VREFIN
PHASE1
PHASE2
REFADJ
OTP
TJ > 150oC
Current
Balance
VSNS
TON
VSNS1
VSNS2
Comparator
On-time
Generator
VSNS
GNDSNS
+
Power
Saving
Setting
EN
REFIN
BOOT1
VCC
BOOT2
VCC
Logic
Control
UGATE1
PSI
Logic
Control
UGATE2
PHASE1
PHASE2
ILG2SET
IOCSET
VCC
VCC
LGATE1
Over
Current
Protection
S/H
Over
Voltage
Protection
PHASE1
PHASE2
Under
Voltage
Protection
LGATE2
Zero
Crossing
Detector
GND
Copyright  ANPEC Electronics Corp.
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APW8733
Typical Application Circuit
33k
PSI
VCC
2.2µF 2R2
TON
BOOT1
100k
VCC
PGOOD
EN
270µFx2
VOUT
PHASE1
0.8µH
APM3106
10µFx2
820µFx3
ROCSET
(Option
)
IOFS
51k
VREF
BOOT2
UGATE2
0.1µF
10µFx2
APM3109
PHASE2
1k
REFIN
1k
VIN =12V
10µFx2
APM3109
LGATE1
1uF
1M
0.1µF
UGATE1
5V
8.2k
REFADJ
LGATE2
1uF
100R
0.8µH
APM3106
0R
RLG2SET
VID
VSNS
GNDSNS
GND
Figure.1 Typical Application Circuit
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APW8733
Function Description
Constant-On-Time PWM Controller with Input Feed-For-
Where FSW is the nominal switching frequency of the con-
ward
verter in PWM mode. The load current at handoff from
PFM to PWM mode is given by:
The constant-on-time control architecture is a pseudo
fixed frequency with input voltage feed-forward. This architecture relies on the output filter capacitor’s effective
series resistance (ESR) to act as a current-sense resis-
TLOAD(PFM − PWM) =
tor so the output ripple voltage provides the PWM ramp
signal. In PFM operation, the high-side switch on-time is
=
controlled by the on-time generator is determined solely
by a one-shot whose pulse width is inversely propor-
1 VOUT − VOUT
×
× TON − PFM
2
L
VIN − VOUT
1
VOUT
×
×
2L
FSW
VIN
Forced-PWM Mode
tional to the input voltage and directly proportional to the
output voltage. In PWM operation, the high-side switch
The Forced-PW M mode disables the zero-crossing
comparator, which truncates the low-side switch on-time
on-time is determined by a switching frequency control
circuit in the on-time generator block. The switching fre-
at the inductor current zero crossing. This causes the
low-side gate-drive waveform to become the complement
quency control circuit senses the switching frequency of
the high-side switch and keeps regulating it at a constant
of the high-side gate-drive waveform. This in turn causes
the inductor current to reverse at light loads while UGATE
frequency in PWM mode. The design improves the frequency variation and is more outstanding than a conven-
maintains a duty factor of VOUT/VIN. The benefit of ForcedPWM mode is to keep the switching frequency fairly
tional constant-on-time controller, which has large switching frequency variation over input voltage, output current,
constant. The Forced-PWM mode is most useful for reducing audio frequency noise, improving load-transient
and temperature. Both in PFM and PWM, the on-time
response, and providing sink-current capability for dy-
generator, which senses input voltage on TON pin, provides very fast on-time response to input line transients.
namic output voltage adjustment.
Another one-shot sets a minimum off-time (typical:
300ns). The on-time one-shot is triggered if the error com-
VCC Power-On-Reset (POR)
The Power-On-Reset (POR) circuit compares the input
parator is high, the low-side switch current is below the
current-limit threshold, and the minimum off-time one-
voltage at VCC with the POR threshold (4.35V rising,
typical) to ensure the input voltage is high enough for
shot has timed out.
Pulse-Frequency Modulation (PFM)
reliable operation. The 0.1V (typ.) hysteresis prevents
supply transients from causing a restart. Once the input
In PFM mode, an automatic switchover to pulse-frequency
modulation (PFM) takes place at light loads. This
voltage exceeds the POR rising threshold, startup begins.
When the input voltage falls below the POR falling
switchover is affected by a comparator that truncates the
low-side switch on-time at the inductor current zero
threshold, the controller turns off the converter.
crossing. This mechanism causes the threshold between
PFM and PWM operation to coincide with the boundary
VREF
This is the output pin of high precision 2V reference
between continuous and discontinuous inductor-current
operation (also known as the critical conduction point).
voltage. Bypass this pin with a 1uF ceramic capacitor to
GND. The VREF must have capability to drive 5mA output
The on-time of PFM is given by:
TON − PFM =
current.
1
VOUT
×
FSW
VIN
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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APW8733
Function Description (cont.)
Soft-start and Soft-stop
After the VCC voltage exceeds the POR voltage threshold
VREF
and the EN threshold exceeds 1.6V, the device initials a
start-up process and then ramps up the output voltage to
External Control
(GPU Standby mode)
the setting of output voltage. The external soft-start circuit
is as shown in Figure. 2. The REFIN voltage is divided by
VID(PWM)
the resistor R1 and R2. The soft-start duration is given
by:
GPU Standby
VOUT
VBOOT
VBOOT
VSTANDBY
REFIN
TSS = 5τ
Where τ = [ (R1xR2) / (R1+R2) ] x CADJ
Figure. 3 Timing Diagram
Since the VREFIN soft-start, to prevent PGOOD abnormal
Over Current Protection (OCP)
trigger during soft-start. For preventing wrong behavior or
trigger some protections during soft start period, sug-
A resistor (ROCSET), connected from the LGATE1 to GND,
gested the CADJ capacitance must be limited under 10nF
and resistors R1 plus R2 is lower than 10kΩ. Moreover,
programs the over-current trip level. Before the IC initiates a start-up process, an internal current source, IOCSET
consider the power sequence issue, suggested the VREFIN
established time is within 100µs(Typ.).After 300µs which
(120µA typical), flowing through the ROCSET develops a
voltage (VROCSET) across the ROCSET. The device holds VOCP
EN goes high, the PGOOD is enabled. In the events of
under-voltage, over-voltage, over-current, or shutdown,
and stops the current source, I OCSET, during normal
operation. When the voltage across the low-side MOSFET
the chip enables the soft-stop function. The soft-stop function discharges the output voltages to the GND through
exceeds the VOCP, the IC turns off both high-side and lowside MOSFETs. The APW8733 has an internal OCP volt-
an internal 20Ω switch.
age (VOCP_MAX), and the value is 0.6V typical. When the
ROCSET x IOCSET is exceeds 0.6V or the ROCSET is floating or
VID
not connected, the over current threshold will be the internal default value 0.6V.
The VID pin adjusts from VBOOT to VOUT should be normal
(Band-Width is large enough). The soft-start time from
The threshold of the valley inductor current is therefore
VBOOT to VOUT depend on R3 & CADJ, and the output ripple of
VREFIN depend on CADJ & VID frequency.
R1
R2
R3
CADJ
PWM
given by:
IOCSET × ROCSET
RDS( ON )(LOW − Side )
VREF
IOCP =
REFIN
IOCP × ROCSET = IL1 × RDS( ON) _ LG1 + IL 2 × RDS( ON) _ LG2
≈ IOUT × RDS(ON)
REFADJ
VID
Buffer
GND
Figure.2 VID internal circuit.
Copyright  ANPEC Electronics Corp.
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APW8733
Function Description (cont.)
For the over-current is never occurred in the normal operating load range; the variation of all parameters in the
Rx
PHASE1
above equation should be considered:
- The RDS(ON) of low-side MOSFET is varied by temperature and gate to source voltage. Users should determine
the maximum R DS(ON) by using the manufacturer’s
datasheet.
VOFFSET
ISEN1
ISEN2
Sample
& Hold
ISEN1- ISEN2
Rx
VSNS1
Current
Balance
VSNS2
PHASE2
- The minimum I OCSET (120µA) and minimum R OCSET
should be used in the above equation.
VOFFSET
- Note that the IOCP is the current flow through the lowside MOSFET; IOCP must be greater than valley inductor
Figure. 4 Illustration of Current Balance Circuit
current which is output current minus the half of inductor
ripple current.
LOCP > IOUT −
VSNS
Offset Current Adjust
The APW8733 integrated IOFS allows the offset current
∆I
2
to adjust phase current. The IOFS pin voltage is nominal
0.5V when connecting a resistor to GND and 1.5V when
Where ∆I = output inductor ropple current
connecting a resistor to VREF. Connecting a resistor from
IOFS pin to GND generate a current source as:
Current Sharing
The APW8733 extracts phase currents for current balance
by parasitic on-resistance of the lower switches when
IOFS = 0.5V / RIOFS
turned on as shown in Figure. 4. The GM amplifier senses
the voltage drop across the lower switch and converts it
This current is added to phase1 current signal ISEN1 for
current balance. Consequently, phase2 will share more
into current signal each time it turns on. The sampled and
held current is expressed as:
percentage of output current. Connecting a resistor from
IOFS pin to VREF generates a current source as:
ISENx=Gm x ∆V = (GND-VPHASE) / RX + VOFFSET / RX
IOFS = (VREF - 1.5V) / RIOFS
=ILX x RDS(ON) / RX + VOFFSET / RX
This current is added to phase2 current signal ISEN2 for
current balance. Consequently, phase1 will share more
percentage of output current.
The differential current of the current sharing control circuit (ISEN1-ISEN2) is used to generate two current parts, I1
and I2. The VSNS1 and VSNS2 will increase or decrease because of these two currents. For example, when ISEN1 >
Automatic Phase Reduction (PSI)
The APW8733 features automatic phase reduction that
turns off phase2 driver signal at light load condition and
ISEN2, the VSNS1 will decrease and the VSNS2 will increase.
Therefore, the on-time of PWM1 will decrease and the on-
reduces both switching and conduction losses. The automatic phase reduction maintains high power conver-
time of PWM2 will increase. Then, the device will reduce
IL1 current and increase IL2 current for current sharing, vice
sion efficiency over the output current range. The output
current is sensed and mirrored to PSI pin as:
verse.
VPSI = [( IL1 x RDS(ON)_LG1 + IL2 x RDS(ON)_LG2 ) / 800] x RPSI
VPSI ~= ( IOUT x RDS(ON) / 800 ) x RPSI
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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APW8733
Function Description (cont.)
A resistor (RLG2SET), connected from the L GATE2 to GND,
programs the VLG2 voltage. Before the IC initiates a start-
Power-Good Output
up process, an internal current source, I LG2SET (240µA
typical), flowing through the RLG2SET develops a voltage
parator continuously monitors the output voltage. PGOOD
is actively held low in shutdown, and standby. When PWM
(VLG2) across the RLG2SET. The device holds VLG2 and stops
the current source, ILG2SET, during normal operation. The
converter’s output voltage is greater than 85% (typ.) of its
target value, the internal open-drain device will be pulled
VLG2 is therefore given by:
low and the PGOOD will go high. The When the output
voltage VOUT outruns 145% (typ.) or falls down 85% (typ.)
VLG2SET = ILG2SET x RLG2SET
of the target voltage, PGOOD signal will be pulled low
and latched immediately.
PGOOD is an open-drain output and the PGOOD com-
Noted that, the setting time must be ready with 120µs
(Typ.) for correct mode setting in different output power
Over-Temperature Protection (OTP)
The over-temperature circuit limits the junction tempera-
MOSFET application.Select case1 to set the RLG2SET is no
connected. Select case2 to set the VLG2SET which is ranged
ture of the APW8733. When the junction temperature exceeds 150oC, a thermal sensor pulls UGTAE and LGATE
between VLG2_3(1.8V) and VLG2_2(1.075V). Select case3 to
set the VLG2SET which is ranged between VLG2_2(1.075V)
low, allowing the devices to cool. The thermal sensor
allows the converters to start a soft-start process and
and VLG2_1(0.6V). Select case3 to set the VLG2SET which is
lower than VLG2_1(0.6V).
regulate the output voltage again after the junction temperature cools by 30oC. The OTP is designed with a 30oC
The APW8733 operation mode is as follows:
hysteresis to lower the average Junction Temperature
(TJ) during continuous thermal overload conditions, in-
Table.1
creasing the lifetime of the device.
Case
1
2
3
4
RLG2SET
VPSI > 1
NC
5.6k
B
A
3.3k
1.8k
VPSI < 0.6 Debounce Time (us)
C
D
E
F
AàB
BàA
300
0
AàC
CàA
300
0
AàD
DàA
300
0
EàF
FàE
0
0
Over Voltage Protection (OVP)
The over-voltage protection (OVP) circuit monitors the
VSNS (VSNS) voltage to prevent the output from overvoltage. When the VSNS rises above 145% (typ.) of the
setting reference voltage, the APW8733 turns off highside and low-side MOSFETs, and through an internal 20Ω
switch to sink the output voltage (VOUT). The converter
shuts down and the output is latched to be floating after
PGOOD goes high. Cycling the EN enable signal, VCC
power-on-reset signal can reset the latch. The OVP func-
Where:
A: Two Phases with PWM
tion is not latched before PGOOD goes high.
B: Single Phase with PFM
C: Single Phase with PWM
D: Single Phase with Ultra-sonic PFM
E: Single Phase with PWM
F: Single Phase with PFM
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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APW8733
Function Description (cont.)
Under Voltage Protection (UVP)
Layout Consideration
The under-voltage protection circuit monitors the voltage
For all switching power supplies, the layout is an important step in the design; especially at high peak currents
on VSNS (VSNS) by Under-Voltage (UV) comparator to protect the PWM converter against short-circuit conditions.
and switching frequencies. If the layout is not carefully
done, the regulator might show noise problems and duty
When the VSNS falls below the falling UVP threshold (50%
of the setting reference voltage), a fault signal is gener-
cycle jitter.
1. The input capacitor should be placed close to the VIN/
ated and the device turns off high-side and low-side
MOSFETs. The converter shuts down and the output is
VCC and GND. Connecting the capacitor and VIN/VCC/
GND with short and wide trace without any via holes for
latched to be floating after PGOOD goes high. Cycling the
EN enable signal, VCC power-on-reset signal can reset
good input voltage filtering. The distance between VIN/
VCC and GND to capacitor less than 2mm respectively is
the latch. The UVP function doesn’t active before PGOOD
goes high.
recommended.
2. To minimize copper trace connections that can inject
Programming the On-Time Control and PWM Switching Frequency
noise into the system, the inductor should be placed as
close as possible to the PHASE1/PHASE2 pin to mini-
The APW8733 does not use a clock signal to produce
mize the noise coupling into other circuits.
3. The output capacitor should be place closed to con-
PWM. The device uses the constant-on-time control architecture to produce pseudo-fixed frequency with input
verter VOUT and GND.
4. Since the feedback pin and network is a high imped-
voltage feed-forward. The on-time pulse width is proportional to output voltage VOUT and inverses proportional to
ance circuit the feedback network should be routed away
from the inductor. The feedback pin and feedback net-
input voltage VIN. In PWM, the on-time calculation is written as below:
TON = 3.85 × 10 −12 × RTON ×
work should be shielded with a ground plane or trace to
minimize noise coupling into this circuit.
VOUT
VIN − 0.5
Where:
RTON is the resistor connected from TON pin to VIN.
Furthermore, the approximate PWM switching frequency
is written as:
TON =
D
VOUT / VIN
=> FSW =
FSW
TON
Where:
FSW is the PWM switching frequency. APW8733 doesn’t
have VIN pin to calculate on-time pulse width. Therefore,
monitoring VTON voltage as input voltage to calculate ontime. And then, use the relationship between on-time and
duty cycle to obtain the switching frequency.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
15
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APW8733
Package Information
TQFN3x3-20
D
E
b
A
Pin 1
A1
A3
D2
NX
aaa C
L
K
E2
Pin 1 Corner
e
S
Y
M
B
O
L
TQFN3x3-20
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.70
0.80
0.028
0.031
A1
0.00
0.05
0.000
0.002
0.25
0.006
0.010
A3
0.20 REF
0.008 REF
b
0.15
D
2.90
3.10
0.114
0.122
D2
1.50
1.80
0.059
0.071
E
2.90
3.10
0.114
0.122
E2
1.50
1.80
0.059
0.071
0.50
0.012
e
0.40 BSC
L
0.30
K
0.20
0.016 BSC
0.008
0.08
aaa
0.020
0.003
Note : 1. Followed from JEDEC MO-220 WEEE
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
16
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APW8733
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
TQFN3x3-20
A
H
T1
C
d
D
330±2.00
50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
P0
P1
P2
D0
D1
T
A0
B0
K0
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
3.30±0.20
3.30±0.20
1.00±0.20
4.0±0.10
8.0±0.10
W
E1
12.0±0.30 1.75±0.10
F
5.5±0.05
(mm)
Devices Per Unit
Package Type
TQFN3x3-20
Unit
Tape & Reel
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
Quantity
3000
17
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APW8733
Taping Direction Information
TQFN3x3-20
USER DIRECTION OF FEED
Classification Profile
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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APW8733
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
<2.5 mm
≥2.5 mm
Volume mm
<350
235 °C
220 °C
3
Volume mm
≥350
220 °C
220 °C
3
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
Volume mm
350-2000
260 °C
250 °C
245 °C
3
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
HBM
MM
Latch-Up
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
MIL-STD-883-3015.7
JESD-22, A115
JESD 78
19
Description
5 Sec, 245°C
1000 Hrs, Bias @ Tj=125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
VHBM≧2KV
VMM≧200V
10ms, 1tr≧100mA
www.anpec.com.tw
APW8733
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2016
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