GA400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 400 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Designed for industrial level PRODUCT SUMMARY VCES 600 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IC DC at TC = 25 °C 750 A BENEFITS VCE(on) (typical) at 400 A, 25 °C 1.24 V • Increased operating efficiency Speed DC to 1 kHz Package DIAP low profile Circuit Half bridge • Performance optimized as output inverter stage for TIG welding machines • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC (1) TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 750 TC = 80 °C 525 Pulsed collector current ICM 1000 Clamped inductive load current ILM 1000 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation (IGBT) PD RMS isolation voltage VISOL A TC = 25 °C TC = 80 °C 219 145 ± 20 TC = 25 °C 1563 TC = 80 °C 875 Any terminal to case (VRMS t = 1 s, TJ = 25 °C) 3500 V W V Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 12-Jun-15 Document Number: 93363 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 300 A - 1.14 1.35 VGE = 15 V, IC = 400 A - 1.24 1.52 VGE = 15 V, IC = 300 A, TJ = 125 °C - 1.08 1.29 VGE = 15 V, IC = 400 A, TJ = 125 °C - 1.21 1.5 VCE = VGE, IC = 250 μA 3.0 4.6 6.3 VGE = 0 V, VCE = 600 V - 0.075 1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.8 10 IFM = 300 A - 1.48 1.75 IFM = 400 A - 1.63 1.98 IFM = 300 A, TJ = 125 °C - 1.50 1.77 IFM = 400 A, TJ = 125 °C - 1.70 2.04 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 8.5 - V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss SYMBOL TEST CONDITIONS Eon IC = 400 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 25 °C Turn-off switching loss Eoff - 113 - Total switching loss Etot - 121.5 - Turn-on switching loss Eon - 21 - Turn-off switching loss Eoff - 163 - Total switching loss Etot - 184 - - 532 - tr - 377 - td(off) - 496 - - 1303 - Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time td(on) mJ IC = 400 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 125 °C ns tf RBSOA TJ = 150 °C, IC = 1000 A, VCC = 400 V, VP = 600 V, Rg = 22 VGE = 15 V to 0 V, L = 500 μH trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 25 °C IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 125 °C Fullsquare - 150 179 ns - 43 59 A - 3.9 6.3 μC - 236 265 ns - 64 80 A - 8.6 11.1 μC Revision: 12-Jun-15 Document Number: 93363 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C - - 0.08 - - 0.4 - 0.05 - case to heatsink: M6 screw 4 - 6 case to terminal 1, 2, 3: M5 screw 2 - 4 - 270 - Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module RthJC RthCS °C/W Mounting torque Nm Weight Allowable Case Temperature (°C) 800 700 600 IC (A) 500 400 300 TJ = 125 °C 200 TJ = 25 °C 100 0 0.25 160 140 120 DC 100 80 60 40 20 0 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 VCE (V) 93363_01 300 400 500 600 700 800 1.7 VGE = 12 V VGE = 15 V VGE = 18 V 700 600 1.6 1.5 600 A 1.4 VGE = 9 V 1.3 VCE (V) 500 IC (A) 200 Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature 800 400 400 A 1.2 1.1 300 1.0 200 0.9 300 A 100 A 0.8 100 93363_02 100 IC - Continuous Collector Current (A) 93363_03 Fig. 1 - Typical Output Characteristics, TJ = 25 °C, VGE = 15 V 0 0.25 g 0.7 0.6 0.50 0.75 1.00 1.25 1.50 1.75 VCE (V) Fig. 2 - Typical Output Characteristics, TJ = 125 °C 2.00 20 93363_04 40 60 80 100 120 140 160 TJ (°C) Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Revision: 12-Jun-15 Document Number: 93363 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors 800 10 VCE = 20 V 700 TJ = 125 °C 600 1 ICES (mA) IC (A) 500 TJ = 125 °C 400 TJ = 25 °C 300 0.1 TJ = 25 °C 200 0.01 100 0 3 4 5 6 7 8 VGE (V) 93363_05 0.001 100 9 200 300 400 500 600 VCES (V) 93363_08 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current Fig. 5 - Typical IGBT Transfer Characteristics 5.0 600 4.5 500 4.0 400 IF (A) Vgeth (V) TJ = 25 °C 3.5 TJ = 125 °C 300 200 3.0 TJ = 125 °C 2.5 100 2.0 0 TJ = 25 °C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC (mA) 93363_06 0 1000 100 10 1.5 2.0 2.5 Fig. 9 - Typical Diode Forward Characteristics Allowable Case Temperature (°C) 10 000 IC (A) 1.0 VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage 160 140 120 DC 100 1 80 60 40 20 0 1 93363_07 0.5 93363_09 10 100 VCE (V) Fig. 7 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V, Rg = 22 0 1000 93363_10 40 80 120 160 200 240 IF - Continuous Forward Current (A) Fig. 10 - Maximum DC Forward Current vs. Case Temperature Revision: 12-Jun-15 Document Number: 93363 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors 10 000 175 Switching Time (ns) 150 Energy (mJ) 125 100 Eoff 75 50 25 tf td(off) 1000 td(on) tr Eon 100 0 0 100 200 300 0 400 IC (A) 93363_11 5 10 15 20 25 Rg (Ω) 93363_14 Fig. 11 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 14 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 400 A, VCC = 360 V, VGE = 15 V, L = 500 μH 300 10 000 260 tf 1000 TJ = 125 °C 240 td(off) trr (ns) Switching Time (ns) 280 td(on) tr 100 220 200 180 160 TJ = 25 °C 140 120 10 0 100 200 300 100 100 200 300 400 500 600 700 800 900 1000 400 IC (A) 93363_12 Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt, VCC = 400 V, IF = 300 A 175 130 120 Eoff 150 110 100 125 90 100 80 Irr (A) Energy (mJ) dIF/dt (A/μs) 93363_15 Fig. 12 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH 75 TJ = 125 °C 70 60 50 50 Eon 40 TJ = 25 °C 30 25 20 0 0 93363_13 5 10 15 20 10 100 200 300 400 500 600 700 800 900 1000 25 Rg (Ω) Fig. 13 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 400 A, VCC = 360 V, VGE = 15 V, L = 500 μH 93363_16 dIF/dt (A/µs) Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt, VCC = 400 V, IF = 300 A Revision: 12-Jun-15 Document Number: 93363 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors 22 20 18 16 Qrr (μC) 14 TJ = 125 °C 12 10 8 6 TJ = 25 °C 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt (A/μs) 93363_17 Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt, VCC = 400 V, IF = 300 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93363_18 Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93363_19 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 12-Jun-15 Document Number: 93363 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code G A 400 T D 60 S 1 2 3 4 5 6 7 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - A = Generation 4 IGBT 3 - Current rating (400 = 400 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (D = Dual INT-A-PAK Low Profile) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (S = Standard Speed IGBT) CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95435 Revision: 12-Jun-15 Document Number: 93363 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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