2953

NTE2953
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Applications:
D AC−to−DC Power Supply Equipment
D Motor Control
D Server Power Supplies
D Synchronous Rectification
D
G
S
Absolute Maximum Ratings:
Drain−Source Voltage (+25C  TJ  +175C), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain−Gate Voltage (+25C  TJ  +175C, RGS = 20kW), VDSR . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Drain Current, ID
(VGS = 10V, Tmb = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70.4A
(VGS = 10V, Tmb = +100C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49.7A
Peak Drain Current (Pulsed, tp  10ms, Tmb = +25C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281A
Source Current (Tmb = +25C), IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.2A
Peak Source Current (Pulsed, tp  10ms, Tmb = +25C), ISM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281A
Non−Repetitive Drain−Source Avalanche Energy, EDS(AL)S
(VGS = 10V, TJ(init) = +25C, ID = 70.4A, Vsup  100V, Unclamped, RGS = 50W) . . . . 673mJ
Total Power Dissipation (Tmb = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63.8W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Peak Soldering Temperature, Tsld(M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C
Maximum Thermal Resistance, Junction−to−Mounting Base, Rth(j−mb) . . . . . . . . . . . . . . . . . 2.35K/W
Typical Thermal Resistance, Junction−to−Ambient, Rth(j−a) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Isolation Capacitance (f = 1Mhz), Cisol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10pF
RMS Isolation Voltage, Visol(RMS)
(50Hz  f  60Hz, RH  65%, Sinusoidal Waveform, Clean and Dust Free) . . . . . . . . . 2500V
Rev. 9−14
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)DSS VGS = 0V, ID = 250mA, TJ = +25C
100
−
−
V
VGS = 0V, ID = 250mA, TJ = −55C
90
−
−
V
VDS = VGS, ID = 1mA, TJ = +25C
2.0
3.0
4.0
V
VDS = VGS, ID = 1mA, TJ = +175C
1.0
−
−
V
VDS = VGS, ID = 1mA, TJ = −55C
−
−
4.6
V
VDS = 100V, VGS = 0, TJ = +25C
−
−
10
mA
VDS = 100V, VGS = 0, TJ = +100C
−
−
200
mA
VGS = 20V, VDS = 0V, TJ = +25C
−
2
100
nA
VGS = 10V, ID = 15A, TJ = +25C
−
3.95
4.6
mW
VGS = 10V, ID = 15A, TJ = +100C
−
6.9
8.1
mW
VGS = 10V, ID = 15A, TJ = +175C
−
11.05
12.9
mW
f = 1MHz
−
0.9
−
W
VGS = 10V, VDS = 50V, ID = 15A
−
153
−
nC
QGS
−
28
−
nC
Pre-Threshold Gate-Source Charge
QGS(th)
−
25
−
nC
Post-Threshold Gate-Source Charge
QGS(th-pl)
−
3
−
nC
QGD
−
40
−
nC
VDS = 50V, ID = 15A
−
3.5
−
V
VGS = 0V, VDS = 50V, f = 1MHz,
TJ = +25C
−
9900
−
pF
−
660
−
pF
−
381
−
pF
−
35
−
ns
−
40
−
ns
td(off)
−
170
−
ns
tf
−
71
−
ns
IS = 10A, VGS = 0V, TJ = +25C
−
0.72
1.2
V
Static Characteristics
Drain−Source Breakdown Voltage
Gate−Source Threshold Voltage
Drain Leakage Current
Gate Leakage Current
Drain−Source ON−State Resistance
Internal Gate Resistance (AC)
VGS(th)
IDSS
IGSS
RDS(on)
RG
Dynamic Characteristics
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Gate−Source Plateau Voltage
QG(tot)
VGS(pl)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
Fall Time
tr
VDS = 50V, RL = 4W, VGS = 10V,
RG(ext) = 4.7W, TJ = +25C
Source−Drain Diode
Source−Drain Voltage
VSD
Reverse Recovery Time
trr
IS = 10A, dIS/dt = −100A/ms
−
63
−
ns
Recovered Charge
Qr
VGS = 0, VDS = 50V
−
173
−
nC
.114 (2.9)
.181 (4.6)
Max
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)