Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. 2 .5 4 -0+ 0.2.2 rated 8 .7 -0+ 0.2.2 175 5 .6 0 Q101 compliant +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-gate voltage RGS = 20 KÙ VDGR 30 Gate-source voltage VGS Drain-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V ID V V 108 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A Drain current (pulse peak value) *1 IDM 435 A Total power dissipation Tmb = 25 Ptot 157 W Storage & operating temperature Tstg, Tj -55 to 175 reverse drain current (DC) Tmb = 25 IDR 108 A 75 A IDRM 435 A EDS(AL)S 329 J Thermal resistance junction to mounting base Rth j-mb 0.95 K/W Thermal resistance junction to ambient Rth j-a 50 K/W pulsed reverse drain current *1 non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS 30 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25 www.kexin.com.cn 1 Transistors IC SMD Type KUK7607-30B Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS V ID = 0.25 mA; VGS = 0 V;Tj = -55 27 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 0.02 VDS = 30 V; VGS = 0 V;Tj = 25 drain-source on-state resistance IGSS RDSon VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A;Tj = 25 .. Qgs gate-to-drain (Miller) charge Qgd input capacitance Ciss output capacitance Coss reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage 2 Qg(tot) gate-to-source charge VGS = 10 V; VDD = 24 V;ID = 25 A V 4.4 V 1 ìA 500 ìA 2 100 nA 5.9 7 mÙ 13.3 mÙ VGS = 10 V; ID = 25 A;Tj = 175 total gate charge 4 V VDS = 30 V; VGS = 0 V;Tj = 175 gate-source leakage current Unit ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max 30 36 nC 9 nC 12 nC 1820 7446 pF 632 1014 pF Crss 256 360 pF td(on) 20 ns tr 51 ns 51 ns 44 ns 4.5 nH 2.5 nH from source lead to source bond pad 7.5 nH Is = 40A; VGS = 0 V 0.85 VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 25 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù td(off) tf Ld Ls VSD from drain lead 6 mm from package to centre of die 1.2 V reverse recovery time trr IS = 25 A; -dIF/dt = -100 A/ìs; 46 ns recovered charge Qr VGS = -10 V; VDS = 20 V 28 nC www.kexin.com.cn