2583

NTE2583
Silicon NPN Transistor
High Speed Switching Regulator
TO−220 Full Pack
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Note 1. Pulse Width  300s, Duty Cycle  10%.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 400V, IE = 0
−
−
10
A
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
A
DC Current Gain
hFE
VCE = 5V, IC = 1.6A
20
−
50
VCE = 5V, IC = 8A
10
−
−
VCE = 5V, IC = 10mA
10
−
−
fT
VCE = 10V, IC = 1.6A
−
20
−
MHz
Cob
VCB = 10V, f = 1MHz
−
120
−
pF
Current Gain−Bandwidth Product
Output Capacitance
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.6A
−
−
0.8
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.6A
−
−
1.5
V
Rev. 6−15
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 1mA, IE = 0
500
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 5mA, RBE = 
400
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 1mA, IC = 0
7
−
−
V
Collector−Emitter Sustaining Voltage
VCEX(sus) IC = 4.5A, IB1 = 0.45A, IB2 = −1.8A,
L = 500H, Clamped
400
−
−
V
−
−
0.5
s
−
−
2.5
s
−
−
0.3
s
Turn−On Time
ton
Storage Time
tstg
Fall Time
IC = 7A, IB1 = 1.4A, IB2 = 2.8A,
RL = 28.6, VCC = 200V, Note 2
tf
Note 2. Pulse Width = 20s, Duty Cycle  1%.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated