datasheet

SKM300GB126D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
310
A
Tc = 80 °C
218
A
200
A
ICnom
ICRM
SEMITRANS® 3
Trench IGBT Modules
SKM300GB126D
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
400
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
250
A
Tc = 80 °C
169
A
200
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders
• AC inverter drives
• UPS
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1656
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 200 A
VGE = 15 V
chiplevel
chiplevel
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 8 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
VCC = 600 V
IC = 200 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
min.
typ.
max.
Unit
Tj = 25 °C
1.70
2.10
V
Tj = 125 °C
2.00
2.46
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
3.5
4.5
mΩ
5.5
6.8
mΩ
5.8
6.5
V
2.7
mA
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
14.4
nF
f = 1 MHz
0.75
nF
f = 1 MHz
0.65
nF
1800
nC
3.8
Tj = 125 °C
Ω
280
ns
Tj = 125 °C
37
ns
Tj = 125 °C
21
mJ
Tj = 125 °C
560
ns
Tj = 125 °C
100
ns
Tj = 125 °C
33
mJ
per IGBT
0.12
K/W
GB
© by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM300GB126D
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 3
Trench IGBT Modules
SKM300GB126D
IRRM
Qrr
Err
Rth(j-c)
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
typ.
max.
Unit
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
3
3.5
mΩ
4
4.5
mΩ
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 6200 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
290
A
44
µC
18
mJ
0.25
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
15
nH
TC = 25 °C
0.35
mΩ
TC = 125 °C
0.5
mΩ
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
Typical Applications*
• Electronic welders
• AC inverter drives
• UPS
GB
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM300GB126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM300GB126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM300GB126D
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5