Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SC3834
NPN SILICON TRANSISTOR
SWITCH NPN TRANSISTOR

DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon
transistor.

FEATURES
* Humidifier, DC-DC converter, and general purpose

ORDERING INFORMATION
Ordering Number
Package
Lead Free Plating
Halogen Free
2SC3834L-TA3-T
2SC3834G-TA3-T
TO-220
2SC3834L-TF3-T
2SC3834G-TF3-T
TO-220F
2SC3834L-T3P-T
2SC3834G-T3P-T
TO-3P
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

1
B
B
B
Pin Assignment
2
3
C
E
C
E
C
E
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2SC3834

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-emitter voltage
Emitter-Base Voltage
Collector Current (Pulse)
SYMBOL
VCBO
VCEO
VEBO
IC
Base Current
Collector Dissipation (TC=25C)
IB
TO-220
TO-220F
TO-3P
PC
RATINGS
200
120
8
UNIT
V
V
V
A
A
W
W
W
7
3
60
27
65
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCEO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
fT
C
TEST CONDITIONS
IC= 50mA
VCB=200V, IE=0A
VEB=8V, IC=0A
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
IE=-0.5mA, VCE=12V, f=100MHz
VCB=10 V, IE=0A, f=1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
120
TYP
70
MAX UNIT
V
μA
100
μA
100
220
0.5
1.2
30
110
V
V
MHz
pF
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2SC3834
TYPICAL CHARACTERISTICS
250mA
300mA
6
Collector Current,IC (A)
VCE(SAT)-IB Characteristics (Typical)
IC-VCE Characteristics (Typical)
7
Collector-Emitter Saturation,VCE(SAT) (V)

NPN SILICON TRANSISTOR
200mA
150mA
100mA
5
60mA
40mA
4
3
20mA
2
IB=10mA
1
0
0
30
1
2
3
Collector-Emitter Voltage,VCE (V)
4
fT-IE Characteristics (Typical)
2
IC=1A
1
0
0.005 0.01
0.05 0.1
Base Current,IB (A)
5A
0.5
1
Safe Operating Area (Single Pulse)
20
VCE=12V
3A
100ms
10
10ms
5
20
1
Without
Healstink
Natural
Cooling
0.5
10
0.1
0
-0.01
0.05
-0.05 -0.1
-0.5 -1
Emitter Current,IE (A)
-5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
10
50
120
Collect-Emitter Voltage,VCE (V)
200
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2SC3834
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)

PC-TA Derating
40
ith
W
In
fin
30
ite
H
ea
ts
in
20
k
Maximum Power Dissipation,PC (W)
50
10
2
0
Without Heatsink
0
25
100 125
50
75
Ambient Temperature,TA (℃)
150
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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