RF601B2D Diodes Fast recovery diodes RF601B2D zApplications General rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 6.0 0.5±0.1 C0.5 1.5±0.3 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 6.0 2.3±0.2 0.1 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.3 2.3 CPD 2.5 ① 3.0 2.0 6.5±0.2 5.1±0.2 0.1 0.9 （2） （1） （3） 0.65±0.1 0.5±0.1 zConstruction Silicon epitaxial planer zStructure 1.0±0.2 2.3±0.2 2.3±0.2 ROHM : CPD JEITA : SC-63 ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 6 40 150 -55～+150 10.1±0.1 10.1±0.1 φ3.0±0.1 8.0±0.1 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 Unit V V A A ℃ ℃ (*1) Rating of per diode : Io/2 zElectrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time Thermal impedance trr θjc Min. - Typ. 0.87 0.01 14 - Max. 0.93 10 25 6.0 Unit V µA ns ℃/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE Rev.B 1/3 RF601B2D Diodes zElectrical characteristic curves 10 100 10000 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0 1 0 100 200 300 400 500 600 700 800 900 1000 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 200 100 Ta=25℃ Ta=25℃ IF=3A IF=3A n=30pcs n=30pcs REVERSE CURRENT:IR(nA) 880 870 860 AVE:859.4mV 850 AVE:859.4mV 840 Ta=25℃ VR=200V n=30pcs 80 60 50 40 AVE:4.60nA AVE:4.60nA 30 20 110 100 90 AVE:99.4pF 80 70 60 50 Ct DISPERSION MAP IR DISPERSION MAP 1000 8.3ms 150 100 AVE:126.0A 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:13.7ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 50 120 0 30 200 130 10 300 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 1000 30 Ta=25℃ f=1MHz VR=0V n=10pcs 140 70 VF DISPERSION MAP 250 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 150 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 FORWARD VOLTAGE:VF(mV) 10 0.1 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=150℃ Ta=125℃ 100 10 100 Ifsm t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 8 DC D=1/2 10 Rth(j-c) IM=100mA 1 1ms IF=3A FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Mounted on epoxy board Sin(θ＝180) 6 4 2 time 300us 0.1 0.001 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RF601B2D Diodes 15 D=1/2 DC 5 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 10 VR D=t/T VR=100V T Tj=150℃ t DC 10 T VR D=t/T VR=100V Tj=150℃ D=1/2 5 Sin(θ＝180) 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 No break at 30kV No break at 30kV 25 20 15 10 5 0 0 0 30 Io 0A 0V Io 0A 0V ELECTROSTATIC DISCHARGE TEST ESD(KV) 15 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1