10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet flow PHASE0 600 V / 75 A Features flow 0 housing ● Trench Fieldstop IGBT3 technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design Target Applications Schematic ● Motor Drive ● UPS Types ● 10-FZ062PA075SA-P993F08 ● 10-F0062PA075SA-P993F09 Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 60 A 225 A 104 W Half-Bridge Switch Collector-emitter break down voltage DC collector current V CE IC T j = T jmax Repetitive peak collector current I CRM t p limited by T jmax Power dissipation P tot T j = T jmax Gate-emitter peak voltage V GE Short circuit ratings t SC V CC T s = 80 °C T s = 80 °C ±20 V 6 360 µs V T jmax 175 °C V RRM 600 V 51 A 150 A 69 W T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(T jmax - 25) °C Maximum Junction Temperature T j ≤ 150 °C V GE = 15 V Half-Bridge Diode Peak Repetitive Reverse Voltage DC forward current IF T j = T jmax Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T s = 80 °C T s = 80 °C Thermal Properties Isolation Properties Isolation voltage V is t =2s DC voltage Creepage distance Clearance Comparative Tracking Index copyright Vincotech CTI 4000 V min 12,7 mm 17 mm housing min 12,7 mm 12 mm housing 9,88 mm >200 1 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Characteristic Values Parameter Conditions Symbol V GE [V] V GS [V] V r [V] V CE [V] V DS [V] Value I C [A] I F [A] I D [A] T j [°C] 0,0012 25 75 25 150 Min Unit Typ Max 5 5,8 6,5 1 1,63 1,87 2,1 Half-Bridge Switch Gate emitter threshold voltage V GE(th) Collector-emitter saturation voltage V CEsat V CE = V GE 15 V V Collector-emitter cut-off current incl. Diode I CES 0 600 25 0,03 mA Gate-emitter leakage current I GES 20 0 25 700 nA Integrated Gate resistor R gint Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf Turn-on energy loss E on Turn-off energy loss E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG Thermal resistance junction to sink R th(j-s) Ω 4 R goff = 2 Ω R gon = 2 Ω ±15 300 75 25 150 25 150 25 150 25 150 25 150 25 150 123 132 15 21 169 199 87 105 0,52 0,89 1,68 2,26 ns mWs 4700 f = 1 MHz 0 25 15 480 25 pF 300 145 75 25 phase-change material λ = 3,4 W/mK 465 nC 0,83 K/W Half-Bridge Diode Diode forward voltage Peak reverse recovery current VF I RRM Reverse recovery time t rr Reverse recovered charge Q rr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance junction to sink copyright Vincotech 50 R gon = 2 Ω ±15 300 ( di rf/dt )max E rec R th(j-s) phase-change material λ = 3,4 W/mK 75 25 150 25 150 25 150 25 150 25 150 25 150 1 1,64 1,59 94 111 101 128 3,24 6,50 6615 4122 0,75 1,57 1,18 2 2,1 V A ns µC A/µs mWs K/W 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 1. Typical output characteristics I C = f(V CE) Half-Bridge Switch figure 2. Half-Bridge Switch Typical output characteristics I C = f(V CE) IC (A) 200 IC (A) 200 160 160 120 120 80 80 40 40 0 0 0 At tp = Tj = V GE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = V GE from 350 μs 25 °C 7 V to 17 V in steps of 1 V figure 3. Typical transfer characteristics I C = f(V GE) Half-Bridge Switch 1 2 3 4 5 350 μs 150 °C 7 V to 17 V in steps of 1 V figure 4. Typical diode forward current as a function of forward voltage I F = f(V F) Half-Bridge Diode 200 IC (A) IF (A) 75 V CE (V) 60 160 45 120 30 80 Tj = Tjmax - 25°C Tj = Tjmax - 25°C 15 40 Tj = 25°C Tj = 25°C 0 0 0 At tp = V CE = 2 350 10 copyright Vincotech 4 6 8 10 V GE (V) 12 0 At tp = μs V 3 0,5 1 350 μs 1,5 2 2,5 V F (V) 3 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 5. Half-Bridge Switch figure 6. Half-Bridge Switch Typical switching energy losses Typical switching energy losses as a function of collector current E = f(I C) as a function of gate resistor E = f(R G) E (mWs) 4 E (mWs) 4 Eoff High T 3,2 3,2 Eoff Low T 2,4 2,4 1,6 1,6 Eoff High T Eoff Low T Eon High T Eon Low T Eon High T 0,8 0,8 Eon Low T 0 0 0 30 60 90 120 I C (A) 0 150 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = °C 25/150 V CE = 300 V V GE = ±15 V R gon = 2 Ω R goff = 2 Ω With an inductive load at Tj = °C 25/150 V CE = 300 V V GE = ±15 V IC = 75 A figure 7. Half-Bridge Switch Typical reverse recovery energy loss as a function of collector current E rec = f(I C) figure 8. Half-Bridge Switch Typical reverse recovery energy loss as a function of gate resistor E rec = f(R G) E (mWs) 2,5 E (mWs) 2,5 Erec 2 2 Tj = Tjmax -25°C Tj = Tjmax -25°C 1,5 Erec 1,5 Tj = 25°C Erec 1 1 Tj = 25°C 0,5 Erec 0,5 0 0 0 30 60 90 120 I C (A) 150 0 With an inductive load at Tj = 25/150 °C V CE = 300 V V GE = ±15 V R gon = 2 Ω copyright Vincotech 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = 25/150 °C V CE = 300 V V GE = ±15 V IC = 75 A 4 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 9. Half-Bridge Switch figure 10. Half-Bridge Switch Typical switching times as a Typical switching times as a function of collector current t = f(I C) function of gate resistor t = f(R G) 1 t ( µs) t ( µs) 1 tdoff tdoff tdon tdon 0,1 tf 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 30 60 90 120 I C (A) 150 0 With an inductive load at Tj = 150 °C V CE = 300 V V GE = ±15 V R gon = 2 Ω R goff = 2 Ω 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = 150 °C V CE = 300 V V GE = ±15 V IC = 75 A figure 11. Typical reverse recovery time as a function of collector current t rr = f(I C) Half-Bridge Diode figure 12. Half-Bridge Diode Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(R gon) t rr( µs) 0,25 t rr( µs) 0,14 trr 0,12 Tj = Tjmax -25°C trr 0,2 Tj = Tjmax -25°C Tj = 25°C trr 0,1 0,15 0,08 trr Tj = 25°C 0,06 0,1 0,04 0,05 0,02 0 0 0 At Tj = V CE = V GE = R gon = 30 25/150 300 ±15 2 copyright Vincotech 60 90 120 I C (A) 0 150 At Tj = VR= IF= V GE = °C V V Ω 5 2 25/150 300 75 ±15 4 6 8 R g on ( Ω ) 10 °C V A V 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 13. Half-Bridge Diode figure 14. Half-Bridge Diode Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current Q rr = f(I C) function of IGBT turn on gate resistor Q rr = f(R gon) 10 Qrr( µC) Qrr( µC) 10 Qrr 8 8 Tj = Tjmax -25°C Qrr Tj = Tjmax -25°C 6 6 Qrr Tj = 25°C 4 4 Tj = 25°C Qrr 2 2 0 0 0 At At Tj = V CE = V GE = R gon = 30 60 90 120 I C (A) 150 0 2 4 25/150 300 °C V At Tj = VR= 25/150 300 °C V ±15 2 V Ω IF= V GE = 75 ±15 A V figure 15. Typical reverse recovery current as a function of collector current I RRM = f(I C) Half-Bridge Diode 6 8 R g on ( Ω) 10 figure 16. Half-Bridge Diode Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(R gon) 150 IrrM (A) 150 IrrM (A) IRRM 120 120 IRRM Tj = Tjmax -25°C Tj = Tjmax - 25°C 90 90 IRRM Tj = 25°C Tj = 25°C 60 60 30 30 IRRM 0 0 0 At Tj = V CE = V GE = R gon = 30 25/150 300 ±15 2 copyright Vincotech 60 90 120 I C (A) 0 150 At Tj = VR= IF= V GE = °C V V Ω 6 2 25/150 300 75 ±15 4 6 8 R gon ( Ω ) 10 °C V A V 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 17. Half-Bridge Diode figure 18. Half-Bridge Diode Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I C) and reverse recovery current as a function of IGBT turn on gate resistor dI 0/dt ,dI rec/dt = f(R gon) 10000 direc / dt (A/ µs) direc / dt (A/µ s) 10000 dI0/dt dIrec/dt 8000 dI0/dt dIrec/dt 8000 Tj = 25°C dIrec/dtLow T Tj = Tjmax - 25°C 6000 6000 di0/dtHigh T dIo/dtLow T 4000 4000 dIrec/dtHigh T 2000 2000 dIrec/dtHigh T 0 0 0 At Tj = V CE = V GE = R gon = 30 60 90 I C (A) 120 150 0 4 25/150 300 °C V At Tj = VR= 25/150 300 °C V ±15 2 V Ω IF= V GE = 75 ±15 A V figure 19. IGBT transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) Half-Bridge Switch 6 figure 20. FWD transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) R gon ( Ω ) 8 10 Half-Bridge Diode Zth(j-s) (K/W) 101 Zth(j-s) (K/W) 101 100 100 10 2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 -1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10-1 10-2 10-2 10-5 At D = R th(j-s) = 10-4 10-3 10-2 10-1 100 t p (s) 10-5 10110 At D = R th(j-s) = tp/T 0,83 K/W 10-4 10-3 1,18 R (K/W) 2,50E-02 1,27E-01 3,97E-01 R (K/W) 3,13E-02 1,33E-01 5,21E-01 copyright Vincotech 100 t p (s) 10110 K/W FWD thermal model values 1,75E-01 4,04E-02 6,97E-02 8,14E-03 3,66E-02 4,72E-04 10-1 tp/T IGBT thermal model values Tau (s) 9,78E+00 1,12E+00 1,86E-01 10-2 Tau (s) 9,08E+00 1,00E+00 1,71E-01 2,81E-01 3,39E-02 1,36E-01 6,90E-03 7,81E-02 4,32E-04 7 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 21. Half-Bridge Switch figure 22. Half-Bridge Switch Power dissipation as a Collector current as a function of heatsink temperature P tot = f(T s) function of heatsink temperature I C = f(T s) 100 IC (A) Ptot (W) 240 200 80 160 60 120 40 80 20 40 0 0 0 At Tj = 50 175 100 150 T s ( o C) 0 200 At Tj = V GE = °C figure 23. Half-Bridge Diode 50 175 15 100 T s ( o C) 200 °C V figure 24. Power dissipation as a function of heatsink temperature P tot = f(T s) 150 Half-Bridge Diode Forward current as a function of heatsink temperature I F = f(T s) 90 Ptot (W) IF (A) 150 75 120 60 90 45 60 30 30 15 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T s ( o C) 200 0 At Tj = °C 8 50 175 100 150 T s ( o C) 200 °C 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Half-Bridge figure 25. Safe operating area as a function Half-Bridge Switch figure 26. Gate voltage vs Gate charge of collector-emitter voltage I C = f(V CE) V GE = f(Q g) Half-Bridge Switch IC (A) VGE (V) 21 18 10uS 103 100uS DC 100mS 15 120 V 480 V 1mS 10mS 102 12 9 101 6 100 3 0 10-1 0 10 At D = Ts = V GE = Tj = 101 102 V CE (V) 0 103 At IC = single pulse 80 ±15 T jmax copyright Vincotech 100 75 200 300 400 500 Q g (nC) 600 A ºC V 9 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Switching Definitions General conditions Tj = 150 °C = 2Ω R gon R goff = 2Ω figure 1. Half-Bridge Switch Turn-off Switching Waveforms & definition of t doff, t Eoff figure 2. Half-Bridge Switch Turn-on Switching Waveforms & definition of t don, t Eon (t E off = integrating time for E off) (t E on = integrating time for E on) 150 260 % % 125 tdoff IC 210 VCE 100 VCE 90% VGE 90% 160 75 VCE 110 IC 50 tEoff 25 VGE -25 -0,2 IC10% VGE10% 10 0 VGE tdon 60 VCE 3% tEon IC 1% -40 -0,05 0,1 0,25 0,4 0,55 2,8 time (us) V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = -15 15 300 t doff = t E off = 2,95 3,1 V V V V GE (0%) = V GE (100%) = V C (100%) = 75 A I C (100%) = 75 A 0,20 0,45 μs μs t don = t E on = 0,13 0,23 μs μs figure 3. Half-Bridge Switch Turn-off Switching Waveforms & definition of t f -15 15 300 3,25 3,4 3,55 time(us) V V V figure 4. Half-Bridge Switch Turn-on Switching Waveforms & definition of t r 140 260 % % 120 fitted 220 VCE IC 100 180 IC 90% 80 140 IC 60% 60 VCE 100 IC 40% 40 IC90% tr 60 20 IC10% 0 -20 0,05 20 tf 0,1 0,15 0,2 0,25 0,3 IC -20 3,03 0,35 time (us) IC10% 3,11 3,19 3,35 time(us) V C (100%) = I C (100%) = 300 75 V A V C (100%) = I C (100%) = 300 75 V A tf = 0,105 μs tr = 0,02 μs copyright Vincotech 3,27 10 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Switching Definitions figure 5. Half-Bridge Switch Turn-off Switching Waveforms & definition of t Eoff figure 6. Half-Bridge Switch Turn-on Switching Waveforms & definition of t Eon 120 120 % Poff % Eoff Eon 100 100 80 80 60 60 40 40 20 20 Pon VGE 10% VCE 3% VGE 90% 0 0 tEoff tEon IC 1% -20 -0,2 -0,05 0,1 0,25 0,4 -20 2,95 0,55 3,05 3,15 3,25 3,35 time(us) time (us) P off (100%) = E off (100%) = t E off = 22,63 2,26 0,45 kW mJ μs P on (100%) = E on (100%) = t E on = 22,63 0,89 0,23 kW mJ μs figure 7. Half-Bridge Switch Turn-off Switching Waveforms & definition of t rr 120 Id % 80 trr 40 Vd fitted 0 IRRM10% -40 -80 -120 IRRM90% IRRM100% -160 3,05 3,1 3,15 3,2 3,25 3,3 3,35 time(us) V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 11 300 75 111 0,13 V A A μs 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Switching Definitions figure 8. Half-Bridge Diode Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) figure 9. Half-Bridge Diode Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 150 120 % % Id Qrr Erec 100 100 80 50 tQrr tErec 60 0 40 -50 20 -100 -150 3,05 Prec 0 3,15 3,25 3,35 3,45 -20 3,05 3,55 3,15 3,25 3,35 time(us) I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 75 6,50 0,26 A μC μs P rec (100%) = E rec (100%) = t E rec = 12 22,63 1,57 0,26 3,45 3,55 time(us) kW mJ μs 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code without thermal paste with solder pins 12mm housing 10-FZ062PA075SA-P993F08 with thermal paste with solder pins 12mm housing 10-FZ062PA075SA-P993F08-/3/ without thermal paste with solder pins 17mm housing 10-F0062PA075SA-P993F09 with thermal paste with solder pins 17mm housing 10-F0062PA075SA-P993F09-/3/ Text Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Datamatrix Outline Pin table Pin X Y Function 1 0 0 DC- 2 0 2,3 DC- 3 0 4,6 DC- 4 0 6,9 DC- 5 0 15,6 DC+ 6 0 17,9 DC+ 7 0 20,2 DC+ 8 0 22,5 DC+ 9 13,85 16,45 G1 10 16,75 16,45 S1 11 33,5 11,5 OUT 12 33,5 9,2 OUT 13 33,5 6,9 OUT 14 33,5 4,6 OUT 15 33,5 2,3 OUT 16 33,5 0 OUT 17 13,85 13,55 OUT 18 19,55 4,95 S2 19 19,55 7,85 G2 copyright Vincotech 13 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Ordering Code and Marking - Outline - Pinout Ordering Pinout Code & Marking Identification ID Component Voltage Current Function T1, T2 IGBT 600 V 75 A Half-Bridge Switch D1, D2 FWD 600 V 75 A Half-Bridge Diode copyright Vincotech 14 Comment 04 Jun. 2016 / Revision 2 10-FZ062PA075SA-P993F08 10-F0062PA075SA-P993F09 datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 135 Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: 10-Fx062PA075SA-P993F0x-D2-14 04. Jun. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 15 04 Jun. 2016 / Revision 2