V23990-K238-F40-PM MiniSKiiP®2 PACK 1200V/35A MiniSKiiP®2 housing Features ● Solderless interconnection 4 ● Trench Fieldstop IGBT technology Target Applications Schematic ● Servo Drives ● Industrial Motor Drives ● UPS Types ● V23990-K238-F40-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 41 A tp limited by Tjmax 105 A VCE ≤ 1200V, Tj ≤ Top max 70 A 112 W ±20 V T1,T2,T3,T4,T5,T6 Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Turn off safe operating area Power dissipation per IGBT Gate-emitter peak voltage Short circuit ratings Maximum Junction Temperature Ptot Tj=Tjmax Tj=Tjmax Th=80°C Th=80°C VGE tSC Tj≤150°C 10 VCC VGE=15V 800 µs V Tjmax 175 °C VRRM 1200 V 33 A 66 A 77 W 175 °C D1,D2,D3,D4,D5,D6 Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright Vincotech Tjmax 1 Th=80°C Th=80°C Revision: 2.1 V23990-K238-F40-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+125 °C 4000 V Creepage distance min 12.7 mm Clearance min 12.7 mm Insulation Properties Insulation voltage copyright Vincotech Vis t=2s DC voltage 2 Revision: 2.1 V23990-K238-F40-PM Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,6 1,88 2,32 2,2 T1,T2,T3,T4,T5,T6 Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time VCE=VGE 0,0012 35 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH 0,06 120 Rgoff=16Ω Rgon=16Ω ±15 600 35 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω none tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 96 95 22 27 218 291 92 113 1,95 3,07 1,95 3,28 ns mWs 1950 f=1MHz 0 25 pF 155 Tj=25°C 115 ±15 Tj=25°C Thermal grease thickness≤50µm λ=1W/mK 270 nC 0,85 K/W D1,D2,D3,D4,D5,D6 Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink per chip 35 Rgon=16Ω 600 ±15 di(rec)max /dt Erec RthJH 35 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,3 Thermal grease thickness≤50µm λ=1W/mK 2,34 2,32 30,3 40,2 126 292 2,06 5,34 1074 257 0,69 2,07 2,7 V A ns µC A/µs mWs 1,2 K/W 1000 Ω Thermistor Rated resistance R Deviation of R100 ∆R/R T=25°C R100=1670 Ω T=100°C -3 3 % T=100°C 1670,313 Ω A-value B(25/50) Tol. % T=25°C 7,635*10-3 1/K B-value B(25/100) Tol. % T=25°C 1,731*10-5 1/K² R100 P Vincotech NTC Reference copyright Vincotech E 3 Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 T1,T2,T3,T4,T5,T6 IGBT Figure 1 Typical output characteristics IC = f(VCE) T1,T2,T3,T4,T5,T6 IGBT Figure 2 Typical output characteristics IC = f(VCE) 100 IC (A) IC (A) 100 80 80 60 60 40 40 20 20 0 0 0 At tp = Tj = VGE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = VGE from 350 µs 25 °C 7 V to 17 V in steps of 1 V T1,T2,T3,T4,T5,T6 IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 3 V CE (V) 5 350 µs 150 °C 7 V to 17 V in steps of 1 V D1,D2,D3,D4,D5,D6 FWD Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 100 IF (A) IC (A) 35 4 30 80 25 60 20 15 40 10 20 5 0 0 0 2 4 6 8 10 V GE (V) 12 0 At Tj = tp = VCE = 0,8 1,6 2,4 3,2 V F (V) 4 At 25/150 350 10 copyright Vincotech °C µs V tp = 4 350 µs Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 T1,T2,T3,T4,T5,T6 IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(IC) T1,T2,T3,T4,T5,T6 IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 8 E (mWs) E (mWs) 8 Eon High T 6 Eon High T 6 Eoff High T Eon Low T Eon Low T 4 4 Eoff High T Eoff Low T Eoff Low T 2 2 0 0 0 15 30 45 60 I C (A) 0 75 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V Rgon = 16 Ω Rgoff = 16 Ω 32 48 64 RG(Ω) 80 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V IC = 35 A D1,D2,D3,D4,D5,D6 FWD Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(IC) D1,D2,D3,D4,D5,D6 FWD Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) 3 E (mWs) E (mWs) 16 Erec 2,5 3 2,5 Tj = Tjmax -25°C Tj = Tjmax -25°C 2 2 Erec 1,5 1,5 1 1 Tj = 25°C Erec Tj = 25°C Erec 0,5 0,5 0 0 0 15 30 45 60 I C (A) 75 0 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V Rgon = 16 Ω copyright Vincotech 16 32 48 64 RG(Ω) 80 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V IC = 35 A 5 Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 T1,T2,T3,T4,T5,T6 IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) T1,T2,T3,T4,T5,T6 IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) 1 tdoff t ( µs) t ( µs) 1 tdon tdoff tf tf 0,1 0,1 tdon tr tr 0,01 0,01 0,001 0,001 0 16 32 48 64 I C (A) 80 0 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V Rgon = 16 Ω Rgoff = 16 Ω 16 32 48 64 RG(Ω ) 80 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V IC = 35 A D1,D2,D3,D4,D5,D6 FWD Figure 11 Typical reverse recovery time as a function of collector current trr = f(IC) D1,D2,D3,D4,D5,D6 FWD Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) 0,8 t rr( µs) t rr( µs) 0,4 Tj = Tjmax -25°C trr trr 0,3 0,6 0,2 0,4 Tj = Tjmax -25°C trr trr Tj = 25°C 0,2 0,1 Tj = 25°C 0 0 0 At Tj = VCE = VGE = Rgon = 15 25/150 600 ±15 16 copyright Vincotech 30 45 60 I C (A) 0 75 At Tj = VR = IF = VGE = °C V V Ω 6 16 25/150 600 35 ±15 32 48 64 R g on ( Ω ) 80 °C V A V Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 D1,D2,D3,D4,D5,D6 FWD Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(IC) D1,D2,D3,D4,D5,D6 FWD Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 8 Qrr( µC) Qrr( µC) 8 Qrr Tj = Tjmax -25°C 6 6 Qrr Tj = Tjmax -25°C 4 4 Qrr Tj = 25°C 2 2 Qrr Tj = 25°C 0 0 At 0 At Tj = VCE = VGE = Rgon = 15 25/150 600 ±15 16 30 45 60 I C (A) 75 0 16 At Tj = VR = IF = VGE = °C V V Ω D1,D2,D3,D4,D5,D6 FWD Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(IC) 32 25/150 600 35 ±15 48 R g on ( Ω) 80 °C V A V D1,D2,D3,D4,D5,D6 FWD Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) IrrM (A) 120 IrrM (A) 50 64 IRRM Tj = Tjmax -25°C 40 90 IRRM 30 60 Tj = 25°C 20 Tj = Tjmax - 25°C 30 IRRM 10 IRRM Tj = 25°C 0 0 0 At Tj = VCE = VGE = Rgon = 15 25/150 600 ±15 16 copyright Vincotech 30 45 60 I C (A) 75 °C V V Ω 7 0 16 At Tj = VR = IF = VGE = 25/150 600 35 ±15 32 48 64 R gon ( Ω ) 80 °C V A V Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 D1,D2,D3,D4,D5,D6 FWD Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(IC) 9000 direc / dt (A/ µs) 3000 dI0/dt direc / dt (A/µ s) D1,D2,D3,D4,D5,D6 FWD Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) dIrec/dt 2500 dIrec/dt dI0/dt 7500 2000 6000 dIo/dtLow T 1500 4500 di0/dtHigh T Tj = Tjmax - 25°C 1000 3000 Tj = 25°C dIrec/dtLow T 500 1500 dIrec/dtHigh T dIrec/dtHigh T 0 0 0 At Tj = VCE = VGE = Rgon = 15 25/150 600 ±15 16 30 45 I C (A) 60 75 0 At Tj = VR = IF = VGE = °C V V Ω T1,T2,T3,T4,T5,T6 IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 16 25/150 600 35 ±15 32 48 80 °C V A V D1,D2,D3,D4,D5,D6 FWD Figure 20 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) 101 ZthJH (K/W) Zth-JH (K/W) 101 R gon ( Ω ) 64 100 10 -1 10 -2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 0 10 -1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-2 10-5 At D= RthJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-5 10110 At D= RthJH = tp / T 0,85 K/W 10-4 10-3 R (C/W) 0,09 0,26 0,35 0,11 0,03 R (C/W) 0,08 0,33 0,50 0,22 0,10 8 100 t p (s) 10110 K/W FWD thermal model values copyright Vincotech 10-1 tp / T 1,2 IGBT thermal model values Tau (s) 1,5E+00 2,7E-01 8,9E-02 1,4E-02 2,8E-03 10-2 Tau (s) 2,1E+00 2,4E-01 6,6E-02 1,3E-02 2,3E-03 Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 T1,T2,T3,T4,T5,T6 IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) T1,T2,T3,T4,T5,T6 IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 60 Ptot (W) IC (A) 200 160 45 120 30 80 15 40 0 0 0 At Tj = 50 175 100 150 T h ( o C) 200 0 At Tj = VGE = °C D1,D2,D3,D4,D5,D6 FWD Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 IF (A) Ptot (W) T h ( o C) 200 °C V D1,D2,D3,D4,D5,D6 FWD Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 150 150 60 120 45 90 30 60 15 30 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 200 0 At Tj = °C 9 50 175 100 150 T h ( o C) 200 °C Revision: 2.1 V23990-K238-F40-PM T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6 T1,T2,T3,T4,T5,T6 IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) T1,T2,T3,T4,T5,T6 IGBT Figure 26 Gate voltage vs Gate charge VGE = f(QGE) IC (A) VGE (V) 16 240V 14 103 12 100uS 960V 10 102 8 1mS 10 1 6 10mS 4 100mS 100 DC 2 0 10-1 0 10 At D= Th = VGE = Tj = 10 1 10 2 103 0 V CE (V) At IC = single pulse 80 ºC ±15 V Tjmax ºC 50 35 100 150 200 Q g (nC) 250 A Thermistor Thermistor Figure 1 Typical PTC characteristic as a function of temperature RT = f(T) PTC-typical temperature characteristic R/Ω 2000 1800 1600 1400 1200 1000 25 copyright Vincotech 50 75 100 T (°C) 125 10 Revision: 2.1 V23990-K238-F40-PM Switching Definitions Output Inverter General conditions Tj = 150 °C Rgon = 16 Ω Rgoff = 16 Ω Output inverter IGBT Figure 1 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 140 240 % % 120 Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) IC 200 tdoff VCE 100 VGE 90% VCE 90% 160 IC 120 80 60 80 tEoff 40 VCE VGE tdon IC 1% 40 20 IC10% VGE10% 0 VCE 3% 0 VGE tEon -20 -0,3 -0,15 0 0,15 0,3 0,45 0,6 0,75 -40 3,25 0,9 time (us) VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = -15 15 600 35 0,29 0,67 3,4 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A µs µs Output inverter IGBT Figure 3 3,55 3,7 -15 15 600 35 0,10 0,34 V V V A µs µs 3,85 time(us) 4,15 Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 4 Turn-on Switching Waveforms & definition of tr 140 220 % % 120 Ic 190 fitted IC 100 160 VCE IC 90% 80 130 VCE IC 60% 60 100 IC90% IC 40% 40 70 20 tr 40 IC10% tf 0 -20 0,15 0,2 0,25 IC10% 10 0,3 0,35 0,4 -20 3,35 0,45 3,45 3,55 3,65 time (us) VC (100%) = IC (100%) = tf = copyright Vincotech 600 35 0,11 3,75 3,85 time(us) VC (100%) = IC (100%) = tr = V A µs 11 600 35 0,03 V A µs Revision: 2.1 V23990-K238-F40-PM Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 220 % Poff % Eoff 100 Pon 180 80 140 Eon 60 100 40 60 20 VGE 90% 20 0 VGE 10% tEoff VCE 3% tEon IC 1% -20 -0,2 -0,05 0,1 0,25 0,4 0,55 0,7 -20 3,25 0,85 3,4 3,55 3,7 3,85 time (us) Poff (100%) = Eoff (100%) = tEoff = 21,03 3,28 0,67 4 time(us) Pon (100%) = Eon (100%) = tEon = kW mJ µs 21,03 3,07 0,34 kW mJ µs Output inverter IGBT Figure 7 Turn-off Switching Waveforms & definition of trr 120 % Id 80 trr 40 Vd 0 IRRM10% -40 fitted -80 IRRM90% IRRM100% -120 3,3 3,5 3,7 3,9 4,1 4,3 time(us) Vd (100%) = Id (100%) = IRRM (100%) = trr = copyright Vincotech 12 600 35 -40 0,29 V A A µs Revision: 2.1 V23990-K238-F40-PM Switching Definitions Output Inverter Output inverter FWD Figure 8 Output inverter FWD Figure 9 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 120 % % Id 100 Qrr Erec 100 80 50 tQrr tErec 60 0 40 -50 20 Prec -100 0 -150 -20 3,2 3,45 3,7 3,95 4,2 4,45 4,7 4,95 3,2 time(us) Id (100%) = Qrr (100%) = tQrr = copyright Vincotech 35 5,34 0,87 3,45 3,7 3,95 4,2 4,45 4,7 4,95 time(us) Prec (100%) = Erec (100%) = tErec = A µC µs 13 21,03 2,07 0,87 kW mJ µs Revision: 2.1 V23990-K238-F40-PM Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version with std lid (black V23990-K22-T-PM) with std lid (black V23990-K22-T-PM) and P12 with thin lid (white V23990-K23-T-PM) with thin lid (white V23990-K23-T-PM) and P12 Ordering Code in DataMatrix as V23990-K238-F40-/0A/-PM V23990-K238-F40-/1A/-PM V23990-K238-F40-/0B/-PM V23990-K238-F40-/1B/-PM K238F40 K238F40 K238F40 K238F40 in packaging barcode as K238F40-/0A/ K238F40-/1A/ K238F40-/0B/ K238F40-/1B/ Outline Pinout copyright Vincotech 14 Revision: 2.1 V23990-K238-F40-PM DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 15 Revision: 2.1