NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - −20 V VGS gate-source voltage Tamb = 25 °C ID drain current RDSon drain-source on-state resistance - - ±8 V Tamb = 25 °C; VGS = −4.5 V [1] - - −2 A Tj = 25 °C; VGS = −4.5 V; ID = −1 A [2] - 100 120 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name NX2301P Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] NX2301P MG* [1] * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - −20 V VGS gate-source voltage Tamb = 25 °C - ±8 V drain current VGS = −4.5 V Tamb = 25 °C - −2 A Tamb = 100 °C - −1.2 A - −6 A ID IDM NX2301P Product data sheet peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 [1] © NXP B.V. 2010. All rights reserved. 2 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 400 mW [1] - 710 mW Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature - 2.8 W 150 °C −55 +150 °C −65 +150 °C - −0.7 A Source-drain diode source current IS Tamb = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. [1] Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature NX2301P −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa095 −10 Limit RDSon = VDS/ID ID (A) (1) −1 (2) (3) −10−1 (4) (5) −10−2 −10−1 −1 −10 −102 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) NX2301P Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 315 K/W [2] - - 175 K/W - - 45 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa096 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa097 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.1 0.33 0.2 0.05 10 0 1 10−3 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - V Static characteristics V(BR)DSS drain-source breakdown ID = −250 μA; VGS = 0 V voltage −20 - VGS(th) gate-source threshold voltage ID = −250 μA; VDS = VGS −0.5 −0.75 −1.1 IDSS drain leakage current VDS = −20 V; VGS = 0 V - - −1 μA IGSS gate leakage current VGS = ±8 V; VDS = 0 V - - ±100 nA RDSon drain-source on-state resistance Tj = 25 °C 100 120 mΩ Tj = 150 °C - 180 mΩ forward transconductance gfs V [1] VGS = −4.5 V; ID = −1 A VGS = −2.5 V; ID = −1 A - 155 190 mΩ VGS = −1.8 V; ID = −0.2 A - 210 270 mΩ - 4.7 - S - 4.5 6 nC - 1.1 - nC - 0.9 - nC - 380 - pF - 135 - pF - 115 - pF - 7 - ns VDS = −5 V; ID = −2 A [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = −2.2 A; VDS = −6 V; VGS = −4.5 V VGS = 0 V; VDS = −6 V; f = 1 MHz VDD = −6 V; RL = 6 Ω; VGS = −4.5 V; RG = 6 Ω - 15 - ns - 50 - ns - 25 - ns - −0.8 −1.0 V Source-drain diode VSD [1] NX2301P Product data sheet source-drain voltage IS = −1 A; VGS = 0 V [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET −3.0 017aaa098 VGS = −2.0 V 017aaa099 −10−3 −1.8 V ID (A) ID (A) −10−4 −2.0 (1) −1.6 V (3) (2) −10−5 −1.0 −1.4 V −1.2 V 0.0 0.0 −1.0 −2.0 −3.0 −4.0 −5.0 VDS (V) −10−6 0.0 Tamb = 25 °C −0.5 −1.0 VGS (V) −1.5 Tamb = 25 °C; VDS = −10 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa100 1.0 RDSon (Ω) (1) Sub-threshold drain current as a function of gate-source voltage 017aaa101 0.4 RDson (Ω) (2) 0.75 0.3 0.50 0.2 (3) (1) 0.25 0.1 (4) 0.0 0.0 −0.5 −1.0 −1.5 −2.0 ID (A) (2) 0.0 0.0 −2.5 Tamb = 25 °C −2.0 −4.0 −6.0 VGS (V) −8.0 ID = −2 A (1) VGS = −1.4 V (1) Tamb = 125 °C (2) VGS = −1.6 V (2) Tamb = 25 °C (3) VGS = −1.8 V (4) VGS = −2.0 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values NX2301P Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa102 −2.0 ID (A) 017aaa103 2.0 a −1.5 1.5 (1) (2) −1.0 1.0 −0.5 0.5 0.0 0.0 −1.0 −2.0 VGS (V) −3.0 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa104 −1.5 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa105 103 (1) C (pF) −1.0 (1) (2) 102 (3) (2) −0.5 (3) 0.0 −60 0 60 120 180 Tamb (°C) ID = −0.25 mA; VDS = VGS 10 −10−1 (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet −10 VDS (V) −102 f = 1 MHz; VGS = 0 V (1) maximum values NX2301P −1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa106 −5.0 VGS (V) −4.0 VDS ID −3.0 VGS(pl) −2.0 VGS(th) VGS −1.0 QGS1 0.0 0.0 QGS2 QGS 1.25 2.5 3.75 5.0 QG (nC) QGD QG(tot) 003aaa508 ID = −2 A; VDS = −6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa107 −1.0 IS (A) −0.75 (1) (2) −0.5 −0.25 0.0 0.0 −0.25 −0.5 −0.75 −1.0 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 18. Package outline SOT23 (TO-236AB) NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint SOT23 (TO-236AB) NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX2301P v.1 20101026 Product data sheet - - NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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Export might require a prior authorization from national authorities. NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 October 2010 Document identifier: NX2301P