Si4835BDY Datasheet

Si4835BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
−30
rDS(on) (W)
ID (A)
0.018 @ VGS = −10 V
−9.6
0.030 @ VGS = −4.5 V
−7.5
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D 100% Rg Tested
Qg (Typ)
−25
APPLICATIONS
D Load Switches
− Notebook PCs
− Desktop PCs
S
SO-8
S
8
D
2
7
D
S
3
6
D
G
4
5
D
S
1
G
Top View
D
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
Si4835BDY—E3 (Lead (Pb)-Free)
Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
−30
Gate-Source Voltage
VGS
"25
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
−9.6
−7.4
−7.7
−5.9
IDM
−50
−2.1
−1.3
2.5
1.5
1.6
0.9
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
39
50
70
85
18
22
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
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Si4835BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
Typ
Max
Unit
−3.0
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On-State
Drain-Source
On State Resistancea
Voltagea
VDS = −30 V, VGS = 0 V
−1
VDS = −30 V, VGS = 0 V, TJ = 55_C
−5
VDS v −5 V, VGS = −10 V
mA
−50
A
VGS = −10 V, ID = −9.6 A
0.014
0.018
VGS = −4.5 V, ID = −7.5 A
0.023
0.030
gfs
VDS = −15 V, ID = −9.6 A
30
VSD
IS = −2.1 A, VGS = 0 V
−0.8
−1.2
25
37
VDS = −15 V, VGS = −5 V, ID = −9.6 A
6.5
rDS(on)
DS( )
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "25 V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
1.0
td(on)
Rise Time
tr
Turn-Off Delay Time
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
12.5
IF = −2.1 A, di/dt = 100 A/ms
2.9
4.9
15
25
13
20
60
100
45
70
45
80
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
TC = −55_C
VGS = 10 thru 5 V
25_C
40
4V
I D − Drain Current (A)
I D − Drain Current (A)
40
30
20
10
125_C
30
20
10
3V
0
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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2
5
6
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3200
0.04
0.03
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.05
VGS = 4.5 V
0.02
VGS = 10 V
2400
Ciss
1600
800
0.01
Coss
Crss
0.00
0
0
10
20
30
40
0
50
6
ID − Drain Current (A)
Gate Charge
24
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 9.6 A
VGS = 10 V
ID = 9.6 A
8
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
18
VDS − Drain-to-Source Voltage (V)
10
6
4
2
1.2
1.0
0.8
0
0
10
20
30
40
0.6
−50
50
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.05
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
60
I S − Source Current (A)
12
0.04
ID = 9.6 A
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
80
60
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.4
0.0
40
20
−0.2
−0.4
−50
−25
0
25
50
75
100
125
0
10−2
150
10−1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
Safe Operating Area
100
IDM Limited
*rDS(on) Limited
P(t) = 0.0001
I D − Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
0.1
P(t) = 1
TA = 25_C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72029.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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