Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V 19 D DC/DC Converters D Synchronous Rectifiers SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY—E3 (Lead Free) Si4362DY-T1—E3 (Lead Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Symbol Limits Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range Unit 20 ID 15 IDM 60 IS 2.9 A 3.5 PD W 2.2 TJ, Tstg −55 to 150 THERMAL RESISTANCE RATINGSa Parameter Symbol Typical Maximum Maximum Junction-to-Ambient RthJA 29 35 Maximum Junction-to-Foot (Drain) RthJF 13 16 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 71628 S-40762—Rev. E, 19-Apr-04 www.vishay.com 1 Si4362DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 30 VDS w 5 V, VGS = 10 V rDS(on) V A VGS = 10 V, ID = 20 A 0.0035 0.0045 VGS = 4.5 V, ID = 19 A 0.0042 0.0055 gfs VDS = 15 V, ID = 20 A 90 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 42 55 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time nC 12.8 7.7 1.3 2.2 td(on) 17 30 tr 14 25 158 230 43 65 50 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 20 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 50 40 40 I D − Drain Current (A) I D − Drain Current (A) VGS = 10 thru 3 V 50 30 20 2V 10 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 20 TC = 125_C 10 0 0 30 10 0 0.0 25_C 0.5 1.0 −55_C 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04 Si4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 8000 0.008 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.010 0.006 VGS = 4.5 V 0.004 VGS = 10 V Ciss 6000 4000 2000 0.002 Coss Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 30 VGS = 10 V ID = 20 A 1.4 3 2 1 1.2 1.0 0.8 0 0 10 20 30 40 0.6 −50 50 −25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.025 r DS(on) − On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.020 0.015 0.010 ID = 20 A 0.005 0.000 1 0.00 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) 24 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 20 A 4 18 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 12 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 40 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 −0.4 20 −0.6 10 −0.8 −50 −25 0 25 50 75 100 125 150 0 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71628 S-40762—Rev. E, 19-Apr-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. 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