MCR221 5, MCR221 7, MCR221 9.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Symbol
Value
Peak repetitive forward and reverse off-state voltage (1)
MCR221-5
MCR221-7
MCR221-9
Rating
VDRM
VRRM
300
500
700
On-state RMS current
(180° conduction angles), TC = 90°C)
IT(RMS)
Average on-state current
IT(AV)
Peak non-repetitive surge current
(1/2 cycle, sine wave 60Hz, TJ = 125°C)
ITSM
Circuit fusing (t = 8.3ms, TJ = -40 to +125°C)
I2t
Unit
Volts
Amps
16
10
Amps
Amps
160
100
A2s
Forward peak gate power
PGM
20
Watts
Forward average gate power
PG(AV)
0.5
Watts
Forward peak gate current
IGM
2.0
Amps
Operating junction temperature range
TJ
-40 to 125
°C
Storage temperature range
Tstg
-40 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
Max
Unit
RӨJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM, IRRM
-
-
10
2.0
µA
mA
-
-
1.7
-
5.0
30
-
0.7
-
1.5
2.5
0.2
-
-
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(VAK = rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak forward on-state voltage
(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
VTM
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 50ohms)
IGT
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 50ohms)
Gate non-trigger voltage
(VD = Rated VDRM, RL = 50ohms)
TC = 25°C
TC = -40°C
TC = 125°C
VGT
VGD
Volts
mA
Volts
Volts
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
ON CHARACTERISTICS
Holding current
(VD = 12Vdc)
TC = 25°C
TC = -40°C
Turn-on time
(ITM = 16A, IGT = 40mAdc, VD = rated VDRM)
Turn-off time
(ITM = 16A, IR = 16A, VD = rated VDRM)
IH
tgt
TC = 25°C
TJ= 125°C
tq
-
6
-
40
60
-
1.0
-
-
15
35
-
-
50
-
mA
µs
µs
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(VD = rated VDRM, exponential waveform)
TJ = 125°C
dv/dt
V/µs
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR221-5, MCR221-7,
MCR221-9
SILICON CONTROLLED RECTIFIERS
Rev. 20130128