High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Symbol Value Peak repetitive forward and reverse off-state voltage (1) MCR221-5 MCR221-7 MCR221-9 Rating VDRM VRRM 300 500 700 On-state RMS current (180° conduction angles), TC = 90°C) IT(RMS) Average on-state current IT(AV) Peak non-repetitive surge current (1/2 cycle, sine wave 60Hz, TJ = 125°C) ITSM Circuit fusing (t = 8.3ms, TJ = -40 to +125°C) I2t Unit Volts Amps 16 10 Amps Amps 160 100 A2s Forward peak gate power PGM 20 Watts Forward average gate power PG(AV) 0.5 Watts Forward peak gate current IGM 2.0 Amps Operating junction temperature range TJ -40 to 125 °C Storage temperature range Tstg -40 to 150 °C THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Max Unit RӨJC 1.5 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit IDRM, IRRM - - 10 2.0 µA mA - - 1.7 - 5.0 30 - 0.7 - 1.5 2.5 0.2 - - OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current (VAK = rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak forward on-state voltage (ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%) VTM Gate trigger current (continuous dc) (VD = 12Vdc, RL = 50ohms) IGT Gate trigger voltage (continuous dc) (VD = 12Vdc, RL = 50ohms) Gate non-trigger voltage (VD = Rated VDRM, RL = 50ohms) TC = 25°C TC = -40°C TC = 125°C VGT VGD Volts mA Volts Volts Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS ON CHARACTERISTICS Holding current (VD = 12Vdc) TC = 25°C TC = -40°C Turn-on time (ITM = 16A, IGT = 40mAdc, VD = rated VDRM) Turn-off time (ITM = 16A, IR = 16A, VD = rated VDRM) IH tgt TC = 25°C TJ= 125°C tq - 6 - 40 60 - 1.0 - - 15 35 - - 50 - mA µs µs DYNAMIC CHARACTERISTICS Critical rate of rise of off state voltage (VD = rated VDRM, exponential waveform) TJ = 125°C dv/dt V/µs MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR221-5, MCR221-7, MCR221-9 SILICON CONTROLLED RECTIFIERS Rev. 20130128