Ordering number : EN6260C 3LN01C N-Channel Small Signal MOSFET http://onsemi.com 30V, 0.15A, 3.7Ω, Single CP Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 30 V 0.15 A 0.6 A 0.25 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±10 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7013A-013 1.1 memo 3LN01C-TB-E 3,000 pcs./reel Pb-Free 3LN01C-TB-H CP SC-59, TO-236, SOT-23, TO-236AB 3,000 pcs./reel Pb-Free and Halogen Free 1.5 3LN01C-TB-E 3LN01C-TB-H Shipping CP SC-59, TO-236, SOT-23, TO-236AB 1 0.95 2 Packing Type: TB Marking 0.4 1 : Gate 2 : Source 3 : Drain CP YA LOT No. 0.05 0.1 3 Package LOT No. 0.3 0.5 2.5 0.5 2.9 Device TB Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 June, 2013 61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6 3LN01C Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=80mA 0.15 V 1 μA ±10 μA 1.3 0.22 V S RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ciss Ω 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time td(on) tr 19 ns 65 ns 155 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 120 ns 1.58 nC 0.26 nC 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=15V VIN VIN PW=10μs D.C.≤1% D ID=80mA RL=187.5Ω VOUT G 3LN01C P.G 50Ω S No.6260-2/6 3LN01C ID -- VDS 0.16 ID -- VGS 0.30 0.10 0.08 VGS=1.5V 0.06 0.04 0.20 25 °C Ta= --25 °C Drain Current, ID -- A V 2.0 75 °C V 0.25 2. 3.0 4.0V 0.12 6.0 V Drain Current, ID -- A 3.5V 5V VDS=10V 0.14 0.15 0.10 0.05 0.02 0 0 0 0.2 0.6 0.4 0.8 0 1.0 Drain to Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 RDS(on) -- ID 10 VGS=4V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=25°C 9 8 7 ID=80mA 6 40mA 5 3.0 IT00030 4 3 2 7 5 Ta=75°C 25°C 3 --25°C 2 1 1.0 0.01 0 0 1 2 3 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V 10 Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A , =2. V GS mA 40 I D= 4 V 3 4.0 S= A, VG m 80 I D= 2 1 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 5 7 1.0 IT00032 RDS(on) -- ID VGS=1.5V 3 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 2 3 5 7 0.01 2 3 5 7 0.1 IT00034 | yfs | -- ID 1.0 5V 5 3 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Static Drain to Source On-State Resistance, RDS(on) -- Ω 1.0 IT00033 6 2 0.1 5 1.0 0.001 7 RDS(on) -- Ta 7 7 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 7 3 5 100 VGS=2.5V 5 3 Drain Current, ID -- A RDS(on) -- ID 10 2 IT00031 VDS=10V 7 5 3 25°C -Ta= 2 25°C 75°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00036 No.6260-3/6 3LN01C IS -- VSD 1.0 VGS=0V 7 2 7 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 Gate to Source Voltage, VGS -- V 5 3 2 Ciss 7 Coss 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg 10 VDS=10V ID=150mA 9 5 3 Drain Current, ID -- A f=1MHz 10 2 IT00037 7 Ciss, Coss, Crss -- pF 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 Switching Time, SW Time -- ns 3 Ta =7 5° C 25 °C --2 5°C Source Current, IS -- A 5 0.1 SW Time -- ID 1000 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain to Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W 18 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00041 No.6260-4/6 3LN01C Outline Drawing 3LN01C-TB-E, 3LN01C-TB-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.6260-5/6 3LN01C Note on usage : Since the 3LN01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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