SCH2602 Ordering number : ENN8323 N-Channel and P-Channel Silicon MOSFETs SCH2602 General-Purpose Switching Device Applications Features • • • The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting. Low ON-resistance. 2.5V drive (N-ch), 1.8V drive (P-ch). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --12 Gate-to-Source Voltage VGSS ±10 ±10 V ID 0.35 --1.5 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% 1.4 Mounted on a ceramic board (900mm2✕0.8mm) 1unit --6 0.6 V A W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=80mA 130 ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V Marking : FB V 10 µA ±10 µA 1.3 220 V mS 2.9 3.7 Ω 3.7 5.2 Ω 6.4 12.8 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TA-100972 No.8323-1/6 SCH2602 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 7.0 Output Capacitance 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 120 ns VDS=10V, VGS=4V, ID=150mA 1.58 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA 0.26 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 V(BR)DSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V 0.31 nC 1.2 V --10 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage --12 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA --0.3 yfs RDS(on)1 VDS=--6V, ID=--0.8A 1.1 Cutoff Voltage Forward Transfer Admittance V --1.0 V 1.8 S ID=--0.8A, VGS=--4.5V ID=--0.4A, VGS=--2.5V 235 310 mΩ 335 470 mΩ 445 670 mΩ RDS(on)4 Ciss ID=--0.1A, VGS=--1.8V ID=--50mA, VGS=--1.5V 750 1250 mΩ VDS=--6V, f=1MHz 160 pF Output Capacitance Coss VDS=--6V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 29 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time RDS(on)2 RDS(on)3 tf Qg Total Gate Charge See specified Test Circuit. 30 ns VDS=--6V, VGS=--4.5V, ID=--1.5A 2.6 nC 0.25 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--1.5A VDS=--6V, VGS=--4.5V, ID=--1.5A Diode Forward Voltage VSD IS=--1.5A, VGS=0V Package Dimensions unit : mm 7028-007 0.65 --0.92 6 5 4 1 2 3 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 V Electrical Connection 1.6 6 5 4 nC --1.5 1 : Source1 2 : Gate2 3 : Source2 4 : Gate1 / Drain2 5 : Drain1 6 : Drain1 Top view 1 : Source1 2 : Gate2 3 : Source2 4 : Gate1 / Drain2 5 : Drain1 6 : Drain1 SANYO : SCH6 No.8323-2/6 SCH2602 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN ID=80mA RL=187.5Ω VOUT D VIN VIN PW=10µs D.C.≤1% G G P.G [Nch] 0.08 VGS=1.5V 0.06 0.04 0.20 75 °C Drain Current, ID -- A 3.0 0.25 V 0.10 [Nch] Ta= --25 °C 5V 2. V 2.0 V 3.5V 4.0V ID -- VGS 0.30 VDS=10V 6.0 Drain Current, ID -- A 0.14 S °C ID -- VDS 0.16 SCH2602 50Ω S 0.15 0.10 0.05 0.02 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 0.5 1.0 1.5 2.5 2.0 [Nch] [Nch] VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 5 ID=40mA 4 3 2 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 [Nch] Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 25°C 3 --25°C 2 2 3 3 5 IT00033 5 7 2 0.1 3 5 IT00032 RDS(on) -- ID 100 [Nch] VGS=1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 3 Ta=75°C Drain Current, ID -- A VGS=2.5V 5 5 IT00031 RDS(on) -- ID 10 7 1.0 0.01 0 1 IT00030 RDS(on) -- ID 10 Ta=25°C 0 3.0 Gate-to-Source Voltage, VGS -- V IT00029 RDS(on) -- VGS 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 SCH2602 50Ω 0.12 VOUT D VIN 25 °C P.G ID= --0.8A RL=7.5Ω 75 ° --2 C 5°C PW=10µs D.C.≤1% 0V --4.5V Ta = 4V 0V VDD= --6V 5 3 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 1.0 0.001 2 3 5 7 0.01 Drain Current, ID -- A 2 3 5 IT00034 No.8323-3/6 SCH2602 RDS(on) -- Ta [Nch] 6 5 V 2.5 ,V mA = GS 4.0V 40 = I D= , VGS mA 0 8 I D= 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C [Nch] 7 2 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 7 5 3 2 Ciss Coss 5 3 Crss 2 5 7 2 0.1 3 5 IT00036 [Nch] VDD=15V VGS=4V 5 3 td (off) tf 2 100 7 tr 5 3 td(on) 2 2 3 5 7 2 0.1 Drain Current, ID -- A IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 2 7 3 SW Time -- ID [Nch] VDS=10V ID=150mA 9 10 2 10 0.01 [Nch] 3 75°C 7 1.2 5 C --25° 0.1 f=1MHz 7 Ciss, Coss, Crss -- pF Ta= 2 IT00037 Ciss, Coss, Crss -- VDS 100 25°C 3 1000 Switching Time, SW Time -- ns 3 Ta =7 5° C 25 °C --2 5°C Source Current, IS -- A 5 7 5 Drain Current, ID -- A VGS=0V 0.1 7 0.01 0.01 160 [Nch] VDS=10V IT00035 IS -- VSD 1.0 yfs -- ID 1.0 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V 20 IT00039 ASO 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 [Nch] 3 2 IDP=1.4A <10µs Drain Current, ID -- A 1.0 1m s 7 5 10m ID=0.35A s 3 2 0.1 7 5 3 2 DC 100 ms ope rat Operation in this area is limited by RDS(on). ion Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT03292 No.8323-4/6 SCH2602 [Pch] ID -- VGS --2.0 --4 .5 V V V .5 3.0 2.5V --3 --- V --1.8 --1.5V --0.6 --1.5 --1.0 --0.5 --0.3 VGS= --1.0V 0 0 0 --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V 0 --0.5 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V IT04353 RDS(on) -- VGS 800 VDS= --6V Ta= 75° C 25° --2 5°C C Drain Current, ID -- A Drain Current, ID -- A --1.2 --0.9 [Pch] Ta= --25 °C 25° 75°C C ID -- VDS --1.5 [Pch] RDS(on) -- Ta 800 --3.0 IT04354 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 --0.8A 500 ID= --0.4A 400 300 200 100 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V yfs -- ID 400 300 200 100 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 5 140 160 IT04356 IS -- VSD [Pch] [Pch] VGS=0V 3 3 2 C 5° 1.0 -2 =°C Ta 75 7 5 3 2 2 --1.0 7 5 3 --25°C 5°C °C 25°C Source Current, IS -- A 2 2 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 7 --1.0 2 --0.1 --0.4 3 --0.6 --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD -- V IT04357 SW Time -- ID 3 2 --1.8V S= VG , A 0.1 I D= -V = --2.5 A, V GS .4 0 -I D= = --4.5V A, V GS I D= --0.8 500 IT04355 VDS= --6V 0.1 --0.01 Switching Time, SW Time -- ns --8 [Pch] IT04358 Ciss, Coss, Crss -- VDS 5 VDD= --6V VGS= --4.5V [Pch] f=1MHz 3 100 7 Ciss, Coss, Crss -- pF Forward Transfer Admittance, yfs -- S 5 600 0 --60 0 0 700 Ta=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C tr 5 td(off) tf 3 2 td(on) 10 7 5 2 Ciss 100 7 5 Coss 3 Crss 2 3 2 --0.1 10 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT04359 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT04360 No.8323-5/6 SCH2602 VGS -- Qg [Pch] --4.0 ASO [Pch] <10µs IDP= --6.0A 1m 3 --3.5 2 --3.0 --2.5 --2.0 --1.5 --1.0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC IT04361 PD -- Ta 1.0 0.8 3.0 10 0m DC s op era Operation in this area is limited by RDS(on). 2 tio n --0.1 7 5 2 0 ms ID= --1.5A 3 s 10 --1.0 7 5 3 --0.5 Allowable Power Dissipation, PD -- W --10 7 5 VDS= --6V ID= --1.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04362 Drain-to-Source Voltage, VDS -- V [Nch, Pch] M ou nte do na 0.6 ce ram ic bo ard 0.4 (90 0m m2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03293 Note on usage : Since the SCH2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8323-6/6