EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V 0.15 A Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% 0.6 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Conditions Ratings min typ Unit max 30 VDS=10V, ID=100µA VDS=10V, ID=80mA 0.4 Forward Transfer Admittance IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V RDS(on)1 RDS(on)2 ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 3.7 Ω Static Drain-to-Source On-State Resistance 3.7 5.2 Ω ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input Capacitance RDS(on)3 Ciss Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf 0.15 V 1 µA ±10 µA 1.3 0.22 V S Ω 7.0 pF VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. 5.9 pF 2.3 pF 19 ns See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns See specified Test Circuit. 120 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 42006PE MS IM TB-00002220 / 92501 TS IM TA-3277 No.7015-1/5 EC4401C Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 1.58 Gate-to-Source Charge 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0V 0.95 Package Dimensions nC 1.2 V Type No. Indication unit : mm 7036-001 Top View S 0.8 3 1.0 4 Top view 2 1 0.6 Polarity Discriminating Mark 0.5 0.3 0.2 2 4 3 0.6 1 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4 Bottom View Electrical Connection Switching Time Test Circuit Polarity mark (Top) VDD=15V Gate 4V 0V Drain VIN Source ID=80mA RL=187.5Ω VIN *Electrodes : on the bottom Top view G Polarity mark (Top) Drain VOUT D PW=10µs D.C.≤1% P.G 50Ω S EC4401C Gate Source No.7015-2/5 EC4401C ID -- VGS 0.30 0.10 0.08 VGS=1.5V 0.06 0.04 25° C °C Ta= -75 °C V 0.12 0.25 2 Drain Current, ID -- A 3.0 V 4.0V .0V 6.0 Drain Current, ID -- A 3.5V 2. 5V VDS=10V 0.14 25 ID -- VDS 0.16 0.20 0.15 0.10 0.05 0.02 0 0 0 0.2 0.6 0.4 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 IT00030 RDS(on) -- ID 10 Ta=25°C VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 80mA 6 5 ID=40mA 4 3 2 1 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Ta=75°C 25°C --25°C 3 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 3 V 2 1 0 --60 --40 --20 0 20 40 60 80 5 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 7 2 0.1 3 5 IT00032 VGS=1.5V 5 3 2 10 Ta=75°C 7 5 --25°C 25°C 3 2 2 3 5 7 2 0.01 Drain Current, ID -- A 3 IT00034 yfs -- ID 1.0 40 =4.0 I D= , VGS A 80m I D= 4 3 RDS(on) -- ID 1.0 0.001 Forward Transfer Admittance, yfs -- S , mA 2 IT00033 5V =2. V GS 2 7 5 6 5 --25°C 100 RDS(on) -- Ta 7 25°C 3 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C IT00031 VGS=2.5V 1.0 0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 RDS(on) -- ID 10 5 1.0 0.01 0 0 7 VDS=10V 7 5 3 25°C -Ta= 2 75°C 0.1 25°C 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.7015-3/5 EC4401C IS -- VSD 5 Switching Time, SW Time -- ns 7 5 --25 °C Ta= 75 °C 25° C Source Current, IS -- A 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V td(off) tf 2 100 7 tr 5 3 td(on) 2 2 10 Ciss 5 Coss 3 Crss 3 2 5 7 2 0.1 IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 7 2 Drain Current, ID -- A VDS=10V ID=150mA 9 5 Ciss, Coss, Crss -- pF 3 IT00037 f=1MHz 7 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 3 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 18 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00236 No.7015-4/5 EC4401C Note on usage : Since the EC4401C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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