CPH6619 Ordering number : ENA0473 SANYO Semiconductors DATA SHEET CPH6619 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Excellent ON-resistance characterristic. Best suited for load switches. N-channel 1.5V drive, P-channel 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --12 V Gate-to-Source Voltage VGSS ±10 ±8 V 0.4 --2 A 1.6 --8 Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.8 A W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=80mA 0.13 V 1 µA ±10 µA 1.3 V 3.7 Ω Ω Forward Transfer Admittance VGS(off) yfs ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 3.7 5.2 ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input Capacitance RDS(on)3 Ciss 7 pF VDS=10V, f=1MHz VDS=10V, f=1MHz 5.9 pF 2.3 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : WF 0.22 S Ω Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72006PE MS IM TC-00000048 No. A0473-1/7 CPH6619 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 19 Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf Qg See specified Test Circuit. 120 ns VDS=10V, VGS=10V, ID=150mA 1.58 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 0.26 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 V(BR)DSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge ns 0.31 nC 1.2 V --10 µA [P-channel] Drain-to-Source Breakdown Voltage --12 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±6.4V, VDS=0V VDS=--6V, ID=--1mA --0.3 yfs RDS(on)1 VDS=--6V, ID=--1A 1.74 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 V ±10 µA --1.0 V 2.9 S ID=--1A, VGS=--4.5V ID=--0.5A, VGS=--2.5V 130 165 mΩ 180 245 mΩ 240 350 mΩ Input Capacitance Ciss ID=--0.2A, VGS=--1.8V VDS=--6V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 310 pF VDS=--6V, f=1MHz 90 pF Crss VDS=--6V, f=1MHz 80 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 53 ns See specified Test Circuit. 53 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 52 ns VDS=--6V, VGS=--4.5V, ID=--2.0A 4.6 nC 0.7 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--2.0A VDS=--6V, VGS=--4.5V, ID=--2.0A Diode Forward Voltage VSD IS=--2.0A, VGS=0V Package Dimensions 5 4 1 2 3 4 0.9 0.05 1.6 0.2 0.6 2.8 0.2 0.6 6 0.15 2.9 5 --0.89 1 2 0.95 3 0.4 nC --1.5 V Electrical Connection unit : mm (typ) 7018A-007 6 1.3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : CPH6 No. A0473-2/7 CPH6619 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN ID=150mA RL=100Ω VOUT D VIN VIN PW=10µs D.C.≤1% ID= --1A RL=6.0Ω G VOUT D VIN G P.G P.G CPH6619 50Ω ID -- VDS 0.16 CPH6619 50Ω S [Nch] S ID -- VGS 0.30 [Nch] 0.25 VGS=1.5V 0.06 0.04 °C 0.20 75 Drain Current, ID -- A 0.08 Ta= V 2.0 V 0.10 --25 °C V 3.0 4.0V 0.12 2. 3.5V 6.0 Drain Current, ID -- A 0.14 5V VDS=10V °C PW=10µs D.C.≤1% 0V --4.5V 25 4V 0V VDD= --6V 0.15 0.10 0.05 0.02 0 0 0 0.2 0.6 0.4 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 10 0 1.0 0.5 1.0 1.5 2.5 2.0 Gate-to-Source Voltage, VGS -- V IT00029 [Nch] RDS(on) -- ID 10 [Nch] VGS=4V 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 8 7 ID=80mA 6 40mA 5 3.0 IT00030 4 3 2 7 5 Ta=75°C 25°C 3 --25°C 2 1 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00031 1.0 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00032 No. A0473-3/7 CPH6619 RDS(on) -- ID 10 [Nch] 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A RDS(on) -- Ta [Nch] 5V , =2. V GS mA 40 I D= 4 V 3 4.0 S= A, VG m 80 I D= 2 1 0 --60 --40 --20 0 20 40 80 60 100 Ambient Temperature, Ta -- °C 120 140 75 °C 25 °C --2 5°C 2 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 25°C 2 Ciss 7 Coss 3 Crss 2 0.01 3 5 7 0.1 IT00034 [Nch] 7 5 3 25°C -Ta= 2 25°C 75°C 0.1 7 5 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT00036 SW Time -- ID [Nch] VDD=15V VGS=4V 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 10 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 2 7 7 [Nch] 3 2 5 VDS=10V [Nch] VDS=10V ID=150mA 9 5 3 1000 1.2 5 10 2 yfs -- ID f=1MHz 7 Ciss, Coss, Crss -- pF --25°C 3 IT00037 Ciss, Coss, Crss -- VDS 100 5 Drain Current, ID -- A Switching Time, SW Time -- ns 3 Ta = Source Current, IS -- A 5 0.01 0.5 Ta=75°C 7 0.01 0.01 160 [Nch] 7 7 10 Drain Current, ID -- A VGS=0V 0.1 2 IT00035 IS -- VSD 1.0 3 1.0 6 5 5 1.0 0.001 7 1.0 IT00033 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=75°C 5 [Nch] VGS=1.5V 7 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=2.5V 7 RDS(on) -- ID 100 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 No. A0473-4/7 CPH6619 ASO 3 [Nch] ≤10ms IDP=1.6A 2 1m s 7 10 ID=0.4A 5 ms 3 DC 2 10 0m op s era 0.1 Operation in this area is limited by RDS(on). 7 5 3 tio n Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit 2 3 5 7 2 10 3 Drain-to-Source Voltage, VDS -- V ID -- VDS .5 --1.6 8 --1. --4 . --1.2 Drain Current, ID -- A V 5V --1.4 1.5V --1.0 -- --0.8 --0.6 --0.4 --1.4 --1.2 --1.0 --0.8 --0.6 --0.2 25 --0.2 °C --0.4 VGS= --1.0V 0 0 [Pch] VDS= --6V --1.8 --3 . --1.6 --2.0 --2 5V --3 . --1.8 ID -- VGS [Pch] V 0V --2.0 Drain Current, ID -- A 5 IT11328 --25° C 0.01 1.0 5°C 2 Ta= 7 Drain Current, ID -- A 1.0 0 --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V IT04314 RDS(on) -- VGS 400 0 --0.5 [Pch] RDS(on) -- Ta 400 --2.5 IT04315 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 --1.0A ID= --0.5A 200 100 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V --40 --20 0 20 40 60 80 100 120 IS -- VSD [Pch] --10 VDS= --6V 140 160 IT11327 [Pch] VGS=0V 7 5 25 3 °C 5°C --2 = Ta C 75° 2 1.0 3 2 --1.0 7 5 3 --25°C 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 100 Ambient Temperature, Ta -- °C 7 2 7 5 --0.1 V --4.5 , V GS= .0A I D= --1 IT11326 yfs -- ID 10 --8 V = --2.5 , V GS 0.5A I D= -- 200 °C 25°C 0 = --1. , VGS 0.2A I D= -- 0 --60 0 8V 300 Ta=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 IT04318 --0.1 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT04319 No. A0473-5/7 CPH6619 SW Time -- ID 3 [Pch] f=1MHz 7 5 100 tr td(off) 7 tf 5 3 Ciss 3 2 100 Coss 7 Crss 2 td(on) 10 --0.1 5 3 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 0 2 --10 7 5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 3 2 --0.5 3 2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg -- nC IT04322 PD -- Ta 1.0 0.8 5.0 --10 --12 IT04321 [Pch] IDP= --8A 10 ≤10µs m ID= --2A DC s 1m s 10 op er 0m s ati on 3 2 --1.0 0.5 --8 100µs --1.0 7 5 --0.1 7 5 0 --6 ASO [Pch] --3.5 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --2A --4.0 --2 IT04320 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 1000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 Allowable Power Dissipation, PD -- W Ciss, Coss,-Crss -- VDS [Pch] VDD= --6V VGS= --4.5V (T a= 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11329 [Pch, Nch] M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11330 No. A0473-6/7 CPH6619 Note on usage : Since the CPH6619 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No. A0473-7/7