SANYO CPH6619

CPH6619
Ordering number : ENA0473
SANYO Semiconductors
DATA SHEET
CPH6619
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
•
Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
for driving P-channel MOSFET enables high-density mounting.
Excellent ON-resistance characterristic.
Best suited for load switches.
N-channel 1.5V drive, P-channel 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--12
V
Gate-to-Source Voltage
VGSS
±10
±8
V
0.4
--2
A
1.6
--8
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.8
A
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=80mA
0.13
V
1
µA
±10
µA
1.3
V
3.7
Ω
Ω
Forward Transfer Admittance
VGS(off)
yfs
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
2.9
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
3.7
5.2
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
6.4
12.8
Input Capacitance
RDS(on)3
Ciss
7
pF
VDS=10V, f=1MHz
VDS=10V, f=1MHz
5.9
pF
2.3
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Marking : WF
0.22
S
Ω
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72006PE MS IM TC-00000048 No. A0473-1/7
CPH6619
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
Rise Time
tr
td(off)
See specified Test Circuit.
65
ns
See specified Test Circuit.
155
ns
tf
Qg
See specified Test Circuit.
120
ns
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
0.26
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
V(BR)DSS
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
ns
0.31
nC
1.2
V
--10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
--12
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
--0.3
yfs
RDS(on)1
VDS=--6V, ID=--1A
1.74
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
V
±10
µA
--1.0
V
2.9
S
ID=--1A, VGS=--4.5V
ID=--0.5A, VGS=--2.5V
130
165
mΩ
180
245
mΩ
240
350
mΩ
Input Capacitance
Ciss
ID=--0.2A, VGS=--1.8V
VDS=--6V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
310
pF
VDS=--6V, f=1MHz
90
pF
Crss
VDS=--6V, f=1MHz
80
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
td(off)
See specified Test Circuit.
53
ns
See specified Test Circuit.
53
ns
Turn-OFF Delay Time
Fall Time
tf
Qg
Total Gate Charge
See specified Test Circuit.
52
ns
VDS=--6V, VGS=--4.5V, ID=--2.0A
4.6
nC
0.7
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--6V, VGS=--4.5V, ID=--2.0A
VDS=--6V, VGS=--4.5V, ID=--2.0A
Diode Forward Voltage
VSD
IS=--2.0A, VGS=0V
Package Dimensions
5
4
1
2
3
4
0.9
0.05
1.6
0.2
0.6
2.8
0.2
0.6
6
0.15
2.9
5
--0.89
1
2
0.95
3
0.4
nC
--1.5
V
Electrical Connection
unit : mm (typ)
7018A-007
6
1.3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
No. A0473-2/7
CPH6619
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
ID=150mA
RL=100Ω
VOUT
D
VIN
VIN
PW=10µs
D.C.≤1%
ID= --1A
RL=6.0Ω
G
VOUT
D
VIN
G
P.G
P.G
CPH6619
50Ω
ID -- VDS
0.16
CPH6619
50Ω
S
[Nch]
S
ID -- VGS
0.30
[Nch]
0.25
VGS=1.5V
0.06
0.04
°C
0.20
75
Drain Current, ID -- A
0.08
Ta=
V
2.0
V
0.10
--25
°C
V
3.0
4.0V
0.12
2.
3.5V
6.0
Drain Current, ID -- A
0.14
5V
VDS=10V
°C
PW=10µs
D.C.≤1%
0V
--4.5V
25
4V
0V
VDD= --6V
0.15
0.10
0.05
0.02
0
0
0
0.2
0.6
0.4
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
10
0
1.0
0.5
1.0
1.5
2.5
2.0
Gate-to-Source Voltage, VGS -- V
IT00029
[Nch]
RDS(on) -- ID
10
[Nch]
VGS=4V
9
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
8
7
ID=80mA
6
40mA
5
3.0
IT00030
4
3
2
7
5
Ta=75°C
25°C
3
--25°C
2
1
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
IT00031
1.0
0.01
2
3
5
7
0.1
2
Drain Current, ID -- A
3
5
7 1.0
IT00032
No. A0473-3/7
CPH6619
RDS(on) -- ID
10
[Nch]
25°C
--25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
3
5
Drain Current, ID -- A
RDS(on) -- Ta
[Nch]
5V
,
=2.
V GS
mA
40
I D=
4
V
3
4.0
S=
A, VG
m
80
I D=
2
1
0
--60
--40
--20
0
20
40
80
60
100
Ambient Temperature, Ta -- °C
120
140
75
°C
25
°C
--2
5°C
2
5
3
2
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
25°C
2
Ciss
7
Coss
3
Crss
2
0.01
3
5
7
0.1
IT00034
[Nch]
7
5
3
25°C
-Ta=
2
25°C
75°C
0.1
7
5
3
2
2
3
5
7
2
0.1
3
5
7
1.0
IT00036
SW Time -- ID
[Nch]
VDD=15V
VGS=4V
5
3
td(off)
2
tf
100
7
tr
5
3
td(on)
2
10
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
IT00038
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
2
7
7
[Nch]
3
2
5
VDS=10V
[Nch]
VDS=10V
ID=150mA
9
5
3
1000
1.2
5
10
2
yfs -- ID
f=1MHz
7
Ciss, Coss, Crss -- pF
--25°C
3
IT00037
Ciss, Coss, Crss -- VDS
100
5
Drain Current, ID -- A
Switching Time, SW Time -- ns
3
Ta
=
Source Current, IS -- A
5
0.01
0.5
Ta=75°C
7
0.01
0.01
160
[Nch]
7
7
10
Drain Current, ID -- A
VGS=0V
0.1
2
IT00035
IS -- VSD
1.0
3
1.0
6
5
5
1.0
0.001
7
1.0
IT00033
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
5
[Nch]
VGS=1.5V
7
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
VGS=2.5V
7
RDS(on) -- ID
100
8
7
6
5
4
3
2
1
1.0
0
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT00039
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00040
No. A0473-4/7
CPH6619
ASO
3
[Nch]
≤10ms
IDP=1.6A
2
1m
s
7
10
ID=0.4A
5
ms
3
DC
2
10
0m
op
s
era
0.1
Operation in this
area is limited by RDS(on).
7
5
3
tio
n
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
2
3
5
7
2
10
3
Drain-to-Source Voltage, VDS -- V
ID -- VDS
.5
--1.6
8
--1.
--4
.
--1.2
Drain Current, ID -- A
V
5V
--1.4
1.5V
--1.0
--
--0.8
--0.6
--0.4
--1.4
--1.2
--1.0
--0.8
--0.6
--0.2
25
--0.2
°C
--0.4
VGS= --1.0V
0
0
[Pch]
VDS= --6V
--1.8
--3
.
--1.6
--2.0
--2
5V
--3
.
--1.8
ID -- VGS
[Pch]
V
0V
--2.0
Drain Current, ID -- A
5
IT11328
--25°
C
0.01
1.0
5°C
2
Ta=
7
Drain Current, ID -- A
1.0
0
--0.1
--0.2
--0.3
--0.4
Drain-to-Source Voltage, VDS -- V
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage, VGS -- V
IT04314
RDS(on) -- VGS
400
0
--0.5
[Pch]
RDS(on) -- Ta
400
--2.5
IT04315
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
--1.0A
ID= --0.5A
200
100
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
--40
--20
0
20
40
60
80
100
120
IS -- VSD
[Pch]
--10
VDS= --6V
140
160
IT11327
[Pch]
VGS=0V
7
5
25
3
°C
5°C
--2
=
Ta
C
75°
2
1.0
3
2
--1.0
7
5
3
--25°C
5
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
100
Ambient Temperature, Ta -- °C
7
2
7
5
--0.1
V
--4.5
, V GS=
.0A
I D= --1
IT11326
yfs -- ID
10
--8
V
= --2.5
, V GS
0.5A
I D= --
200
°C
25°C
0
= --1.
, VGS
0.2A
I D= --
0
--60
0
8V
300
Ta=7
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
2
3
5
7
--1.0
Drain Current, ID -- A
2
3
5
IT04318
--0.1
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT04319
No. A0473-5/7
CPH6619
SW Time -- ID
3
[Pch]
f=1MHz
7
5
100
tr
td(off)
7
tf
5
3
Ciss
3
2
100
Coss
7
Crss
2
td(on)
10
--0.1
5
3
2
3
5
7
2
--1.0
3
Drain Current, ID -- A
5
0
2
--10
7
5
Drain Current, ID -- A
--3.0
--2.5
--2.0
--1.5
3
2
--0.5
3
2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Total Gate Charge, Qg -- nC
IT04322
PD -- Ta
1.0
0.8
5.0
--10
--12
IT04321
[Pch]
IDP= --8A
10
≤10µs
m
ID= --2A
DC
s 1m
s
10
op
er
0m
s
ati
on
3
2
--1.0
0.5
--8
100µs
--1.0
7
5
--0.1
7
5
0
--6
ASO
[Pch]
--3.5
0
--4
Drain-to-Source Voltage, VDS -- V
VDS= --6V
ID= --2A
--4.0
--2
IT04320
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
1000
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
Allowable Power Dissipation, PD -- W
Ciss, Coss,-Crss -- VDS
[Pch]
VDD= --6V
VGS= --4.5V
(T
a=
25
°C
)
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT11329
[Pch, Nch]
M
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11330
No. A0473-6/7
CPH6619
Note on usage : Since the CPH6619 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0473-7/7