SUD50N04-06H Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.006 @ VGS = 10 V ID (A)c 109 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D High Threshold Voltage At High Temperature Qg (Typ) 95 APPLICATIONS D Automotive Such As: − High-Side Switch − Motor Drives − 12-V Battery TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N04-06H—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C) TC = 25_C Pulsed Drain Current 77c IDM Avalanche Current (Single Pulse) V 109c ID TC = 100_C Unit A 100 IAS 50 Repetitive Avalanche Energy (Single Pulse)a L = 0.1 mH EAS 125 Power Dissipation TC = 25_C PD 136 W TJ, Tstg −55 to 175 _C Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter JJunction-to-Ambient ti t A bi tb Junction-to-Case Symbol t 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes: a. Duty cycle 1%. b. Surface mounted on 1” FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72860 S-42058—Rev. B, 15-Nov-04 www.vishay.com 1 SUD50N04-06H Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 3.4 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 5 V, VGS = 10 V 50 rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C 0.009 VGS = 10 V, ID = 20 A, TJ = 175_C 0.012 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea Forward Transconductancea 5.0 gfs VDS = 15 V, ID = 15 A nA mA m A 0.0049 20 V 0.006 50 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 320 Total Gate Chargec Qg 95 Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 20 V,, VGS = 10 V,, ID = 50 A Qgd 600 pF 37 nC 21 Rg f = 1.0 MHz td(on) 1.7 W 20 30 tr VDD = 20 V, RL = 0.4 W 95 145 td(off) ID 50 A, VGEN = 10 V, Rg = 2.5 W 50 75 12 20 tf ns Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 50 Pulsed Current ISM 100 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/ms 40 60 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72860 S-42058—Rev. B, 15-Nov-04 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 6V 80 I D − Drain Current (A) I D − Drain Current (A) 80 60 40 20 60 40 TC = 125_C 20 25_C 5V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) Transconductance 4 5 6 7 On-Resistance vs. Drain Current 0.010 TC = −55_C 25_C r DS(on) − On-Resistance ( Ω ) 120 125_C 80 40 0 0.008 VGS = 10 V 0.006 0.004 0.002 0.000 0 10 20 30 40 50 60 0 20 40 Capacitance 8400 V GS − Gate-to-Source Voltage (V) 6300 4200 2100 Coss Crss 0 80 100 Gate Charge 20 Ciss 0 60 ID − Drain Current (A) VGS − Gate-to-Source Voltage (V) C − Capacitance (pF) 3 VGS − Gate-to-Source Voltage (V) 160 g fs − Transconductance (S) 2 VDS = 20 V ID = 50 A 16 12 8 4 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Document Number: 72860 S-42058—Rev. B, 15-Nov-04 35 40 0 25 50 75 100 125 150 175 200 Qg − Total Gate Charge (nC) www.vishay.com 3 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) 1.7 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 20 A I S − Source Current (A) 2.0 1.4 1.1 0.8 0.5 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) www.vishay.com 4 150 175 TJ = 150_C TJ = 25_C 10 1 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 72860 S-42058—Rev. B, 15-Nov-04 SUD50N04-06H Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 125 *Limited by rDS(on) 10 ms 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 100 75 50 Limited By Package 25 0 1 ms 10 10 ms dc, 100 ms 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 TC − Case Temperature (_C) 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72860. Document Number: 72860 S-42058—Rev. B, 15-Nov-04 www.vishay.com 5