SUD50N04-06H Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 40 0.006 at VGS = 10 V 109 95 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • High Threshold Voltage At High Temperature RoHS COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-06H-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) a Power Dissipation A 100 IAS 50 L = 0.1 mH EAS 125 mJ TC = 25 °C PD 136 W TJ, Tstg - 55 to 175 °C Avalanche Current (Single Pulse) Repetitive Avalanche Energy (Single Pulse) 77c IDM Pulsed Drain Current V 109c ID TC = 100 °C Unit Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Duty cycle ≤ 1 %. b. Surface Mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72860 S-71661-Rev. C, 06-Aug-07 www.vishay.com 1 SUD50N04-06H Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 3.4 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 150 ID(on) VDS = 5 V, VGS = 10 V 50 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea Forward Transconductancea 5.0 rDS(on) gfs µA 0.006 0.009 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.012 20 nA A 0.0049 VGS = 10 V, ID = 20 A, TJ = 125 °C VDS = 15 V, ID = 15 A V 50 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time c td(on) c td(off) Rise Timec Turn-Off Delay Time tr Fall Timec 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 600 320 95 VDS = 20 V, VGS = 10 V, ID = 50 A 37 f = 1.0 MHz 1.7 nC 21 VDD = 20 V, RL = 0.4 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω 20 30 95 145 50 75 12 20 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 50 Pulsed Current ISM 100 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/µs 40 60 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72860 S-71661-Rev. C, 06-Aug-07 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 100 100 VGS = 10 thru 7 V 6V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 60 40 TC = 125 °C 20 25 °C 5V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 7 0.010 TC = - 55 °C 25 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 0.008 120 125 °C 80 40 0 VGS = 10 V 0.006 0.004 0.002 0.000 0 10 20 30 40 50 60 0 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 40 VGS - Gate-to-Source Voltage (V) 8400 6300 4200 2100 Coss 0 20 Crss 0 VDS = 20 V ID = 50 A 16 12 8 4 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72860 S-71661-Rev. C, 06-Aug-07 175 200 www.vishay.com 3 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2.0 100 VGS = 10 V ID = 20 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 www.vishay.com 4 1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.5 Document Number: 72860 S-71661-Rev. C, 06-Aug-07 SUD50N04-06H Vishay Siliconix THERMAL RATINGS 1000 125 *Limited by rDS(on) 100 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 75 50 Limited By Package 25 0 1 ms 10 10 ms dc, 100 ms 1 TC = 25 °C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72860. Document Number: 72860 S-71661-Rev. C, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1