NCP1602GEVB 160‐W, Wide Mains, PFC Stage Driven by the NCP1602 Evaluation Board User's Manual www.onsemi.com EVAL BOARD USER’S MANUAL Introduction and high-efficiency are the key requirements. Extremely slim, the NCP1602 evaluation board is designed to be less than 13 mm high. This low-profile PFC Stage is intended to deliver 160 W under a 390-V output voltage from a wide mains input. This is a PFC boost converter as used in flat TVs, high power LED street light power supplies, and all-in-one computer supplies. The evaluation board embeds the NCP1602 AEA-version which is powered by an external VCC. With the help of an external dc source, apply a VCC voltage that exceeds the NCP1602−AEA start-up level (18.2 V max) to ensure the circuit starts operating. The VCC operating range is from 9.5 V up to 30 V. Housed in a TSOP6 package, the NCP1602 is designed to drive PFC boost stages in so-called Valley Synchronized Frequency Fold-back (VSFF). In this mode, the circuit classically operates in Critical conduction Mode (CrM) when VCTRL pin voltage exceeds a product version programmable voltage level. When VCTRL pin voltage is below this programmable level, the NCP1602 linearly decays the frequency down to about 20 kHz, when the load current is nearly zero. VSFF maximizes the efficiency throughout the load range. Incorporating protection features for rugged operation, it is furthermore ideal in systems where cost-effectiveness, reliability, low stand-by power Table 1. ELECTRICAL SPECIFICATIONS Description Value Units Input Voltage Range 90−265 V rms Line Frequency Range 45 to 66 Hz 160 W Minimum Output Load Current(s) 0 A Number of Outputs 1 Maximum Output Power Nominal Output Voltage 390 V Maximum Start-Up Time <3 s < 250 mW 95 % 10−100 % 93 % No-Load Power (115 V rms) Target Efficiency at Full Load (115 V rms) Load Conditions for Efficiency Measurements (10%, 20%, …) Minimum Efficiency at 20% Load, 115 V rms Minimum PF over the Line Range at Full Load 95 % Hold-Up Time (the Output Voltage Remaining above 300 V) > 10 ms Peak to Peak Low Frequency Output Ripple <8 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. 0 1 Publication Order Number: EVBUM2302/D NCP1602GEVB THE BOARD Figure 1. A Slim Board (Height < 13 mm) www.onsemi.com 2 3 Figure 2. Application Schematic − Power Section www.onsemi.com L N Earth C3c C3b C3a S2b 86−265 V rms F1 S2a CM1 VLINE C5a 220 nF 400 V C1 1 nF Type = Y C2 1 nF Type = Y R1 1 MW R2 1 MW IN C2 22 nF Type = X2 U1 GBU406 220 nF Type = X2 C5b 220 nF 400 V VIN S1b D4 1N4148 Socket for External VCC Power Source S1a R6 22 W D3 1N4148 L2 200 mH (np/ns = 10) C7 22 mF 50 V R5 2.2 W D2 1N5406 R10 10 kW DZ2 33 V R3 80 mW 3W Q1 IPA50R250 D1 MUR550 C6a 68 mF 450 V Rth1 B57153S150M C6b 68 mF 450 V BULK Vcc GND Vsource Vbulk DRV Vdrain Vaux NCP1602GEVB www.onsemi.com 4 C8 1 nF R11 27 kW Figure 3. Application Schematic − Control Section C9 2.2 mF R12 22 kW C10 220 nF C11 NC C13 100 nF DRV 4 3 CS/ZCD Top View VCC 5 2 GND 6 1 FB VCTRL R27 0W R10 1800 kW R9 1800 kW R8 680 kW S3 R31 10 kW R32 4.7 MW R33 1 MW R30 0W C12 NC R7 0W R24 240 kW R21 39 kW R23 240 kW R22 5.1 MW/ 500 V GND DRV Vsource Vdrain Vcc Vbulk Vaux NCP1602GEVB NCP1602GEVB VSFF OPERATION The NCP1602 operates in so called Valley Synchronized Frequency Fold-back (VSFF) where the circuit works in Critical conduction Mode (CrM) when the load current is medium to high (VCTRL pin voltage medium or high). The load current is correlated with the VCTRL pin voltage (see Table 2). VCTRL = 4.5 V corresponds to the maximum current capability which in our case is not reached because we limit the application to 160 W and 0.5 V corresponds to zero load current. When VCTRL pin voltage is lower than a preset level, the switching frequency linearly decays to about 20 kHz. VSFF maximizes the efficiency at both nominal and light loads. In particular, stand-by losses are minimized. When VCTRL pin voltage (VCTRL) exceeds VCTRL,DT voltage (VCTRL,DT = 1.553 V for the AEA option), the circuit operates in CrM (typical CrM waveforms are depicted in Figure 4). If VCTRL is below VCTRL,DT, the circuit forces a delay (or dead-time) before re-starting a DRV cycle which is proportional to the difference between VCTRL,DT reference and VCTRL voltage. This mode is called discontinuous conduction mode (DCM) or Frequency Foldback and the main waveforms are depicted in Figure 5. This delay is maximum when VCTRL reached is 0.5-V minimum value. When the 0.5-V VCTRL minimum value is VDRAIN reached, the circuit works in a so-called Static OVP mode (for no SKIP mode options like AEA option used on this board), by skipping cycles based on the difference voltage between VCTRL and 0.5-V. This static OVP mode offers a very low output ripple voltage, unlike the classical SKIP mode of other options. The added dead time starts at the end of the boost inductor demagnetization cycle and ends at the on-time start which is synchronized with the boost inductor zero crossing (valley turn on) event. In all cases, the circuit turns on in a drain-source voltage valley: • Classical Valley Turn On in CrM Operation • At the First Valley Following the Completion of the Dead-Time Generated by the VSFF Function to Reduce the Frequency One can also note that the switching frequency being less when the load current is low, the frequency is particularly low at light load, high line. On the other hand, CrM operation being more likely to occur at heavy load, low line. Refer to the data sheet for a detailed explanation of the VSFF operation and of its implementation in the NCP1602 [2]. Iind Vin VDRV Figure 4. Typical Waveform in CrM @ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 400 mA www.onsemi.com 5 NCP1602GEVB VDRAIN Iind Vin VDRV Figure 5. Typical Waveform in DCM @ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 50 mA VCRTL VFB VIN Figure 6. No-Load Waveforms for Option AEA (Skip Mode Disabled) Featuring Static OVP @ VMAINS = 230 V rms www.onsemi.com 6 NCP1602GEVB VFB VCTRL VCC Figure 7. Start-Up and Stop Sequence @ VMAINS = 90 V rms, ILOAD = 400 mA, VCC OFF % ON % OFF Table 2. VCTRL VOLTAGE VS. ILOAD & VMAINS VMAINS (V rms) @ ILOAD = 400 mA @ ILOAD = 300 mA @ ILOAD = 100 mA @ ILOAD = 50 mA @ ILOAD = 0 mA 90 3.77 3.01 1.38 0.96 0.490 110 2.55 2.13 1.02 0.75 0.490 230 1.77 1.42 0.79 0.63 0.490 265 1.35 1.10 0.67 0.57 0.490 www.onsemi.com 7 NCP1602GEVB POWER FACTOR AND EFFICIENCY The NCP1602 evaluation board embeds a NTC to limit the in-rush current that takes place when the PFC stage is plugged in. The NTC is placed in series with the boost diode. This location is rather optimum in term of efficiency since it is in the in-rush current path at a place where the rms current is less compared to the input side. However, this component still consumes some power. That is why the efficiency is given with a shorted NTC to approximately improve the power efficiency value by 1 percent. NCP1602 - Power Efficiency vs. VMAINS & Output Power 99.00 98.00 Power Efficiency (%) 97.00 96.00 95.00 94.00 93.00 Pow_Eff @ 265 V rms 92.00 Pow_Eff @ 230 V rms Pow_Eff @ 110 V rms 91.00 Pow_Eff @ 90 V rms 90.00 0 10 20 30 40 50 60 70 80 90 100 Percent Of Max Output Power (%) Figure 8. Evaluation Board Power Efficiency vs. Output Power (NTC is Shorted) (100% Output Power Corresponds to 160 W) operation. As previously stated, VSFF makes the switching frequency decay linearly as a function of VCTRL voltage (load current) when it goes below a preset level. Figure 8 displays the efficiency versus load at different line levels. When considering efficiency versus load, we generally think of the traditional bell-shaped curves: • At low line, the efficiency peaks somewhere at a medium load and declines at full load as a result of the conduction losses and at light load due to the switching losses • At high line, the conduction losses being less critical, efficiency is maximal at or near the maximum load point and decays when the power demand diminishes because the increasing impact of the switching losses PF and THD Performance Were Measured by Means of a CHROMA 66202 Digital Power Meter Figure 9 and Figure 10 show that VSFF exhibits very similar PF ratios compared to those obtained with CrM traditional operation. VSFF improves the THD performance at light load. We can see on Figure 10 a 5% decrease of THD value when switching from CrM mode to DCM mode. This behavior is due to the fact that in CrM, close to mains voltage zero crossing, there is a zone of zero mains current which leads to a slight mains current distortion (higher THD). When entering DCM, as a dead time is added, the inductor peak current gets higher and the zero mains current region becomes narrower, leading to a 5% decrease of the THD value. Curves of Figure 8 meet this behavior in the right-hand side where our demo-board resembles a traditional CrM PFC stage. In the left-hand side, the efficiency normally drops because of the switching losses until an inflection point where it rises up again as a result of the VSFF www.onsemi.com 8 NCP1602GEVB NCP1602 - PF (W/VA) vs. VMAINS & Output Power 1 PF (no unit) 0.9 0.8 0.7 PF @ 265 V rms PF @ 230 V rms 0.6 PF @ 110 Vrms PF @ 90 V rms 0.5 0 20 40 60 80 100 Percent Of Max Output Power (%) Figure 9. Evaluation Board PF vs. Output Power (100% Output Power Corresponds to 160 W) NCP1602 - Total Harmonic Distortion vs. VMAINS & Output Power 25.00 Line Current THD (%) 20.00 15.00 10.00 THDi @ 265 V rms THDi @ 230 V rms 5.00 THDi @ 110 V rms THDi @ 90 V rms 0.00 0 10 20 30 40 50 60 70 80 90 100 Percent Of Max Output Power (%) Figure 10. Evaluation Board THD vs. Output Power (100% Output Power Corresponds to 160 W) www.onsemi.com 9 NCP1602GEVB PROTECTION OF THE STAGES MOSFET current (VCSZCD). When VCSZCD exceeds a 500-mV internal reference, the circuit forces the driver low. A 400-ns blanking time prevents the OCP comparator from tripping because of the switching spikes that occur when the MOSFET turns on. In our application, the theoretical maximal inductor current is: The NCP1602 protection features allow for the design of very rugged PFC stages Brown-Out Brown out detection is disabled in product option AEA which is used in this Evaluation Board. If brown-is needed, check which option is needed using the product data sheet [2] and use the application note [1] for operating details. I ind,max + Over-Current Protection (OCP) ǒ Ǔ 500 mV 80 mW [ 6.25 A (eq. 1) Figure 11 shows the inductor current when clamped. The over-current situation was obtained @ VMAINS= 90 V rms with a 427-mA load. A 20-V VCC power source was applied to the board. The NCP1602 is designed to monitor the current flowing through the power switch. A current sense resistor (R3 of Figure 2) is inserted between the MOSFET source and ground to generate a positive voltage proportional to the iL(t) Figure 11. Inductor Current Showing OCP Limitation @ VMAINS = 90 V rms, FMAINS = 60 Hz, ILOAD = 427 mA www.onsemi.com 10 NCP1602GEVB DYNAMIC PERFORMANCE The NCP1602 features the dynamic response enhancer (DRE) that increases the loop gain by an order of magnitude when the output voltage goes below 95.5% of its nominal level. This function dramatically reduces undershoots in case of an abrupt increase of the load demand. As an example, Figure 12 illustrates a load step from 400 mA to VFB 0 mA and 0 mA to 400 mA (2-A/ms slope) @ 110 V rms input voltage. One can note that as a result of the DRE function, the control signal (VCTRL) steeply rises multiple times when the FB voltage goes below 0.955 ⋅ 2.5 V = 2.487 V. Soft OVP VCTRL DRE VDRV Figure 12. Load Current Transient Featuring Soft OVP and DRE @ ILOAD = 400 mA/0 mA, VMAINS = 110 V rms, VCC = 20 V www.onsemi.com 11 NCP1602GEVB BEHAVIOR UNDER FAILURE SITUATIONS period, continuous conduction mode (CCM) can occur for a few cycles. The NCP1602 incorporates a second over-current comparator that trips whenever the MOSFET current happens to exceed 150% of its maximum level. Such an event can happen when a) the watchdog restarts a cycle as explained before b) if the current slope is so sharp that the main over-current comparator cannot prevent the current from exceeding this second level as the result of the inductor saturation for instance. In this case, the circuit detects an “overstress” situation and disables the driver for an 800-ms delay. This long delay leads to a very low duty-ratio operation to dramatically limit the risk of overheating. Figure 13 illustrates the operation while the bypass diode and the NTC are both shorted @ VMAINS = 110 V with a 400-mA load current, the NCP1602 being supplied by a 20-V external power source. When the bypass diode is shorted, the demagnetization of the inductor takes too much time and the 200-ms Watchdog timer helps to start a new on-time, during which the OCP limit is reached. Because the previous demag was not reached and OCP is triggered, a 800-ms timer is used before allowing to start a new on-time. This helps limit the current resulting from the shorting of the bypass diode and the very low duty-ratio prevents the application from heating up. Elements of the PFC stage can be accidently shorted, badly soldered or damaged as a result of manufacturing incidents, of an excessive operating stress or of other troubles. In particular, adjacent pins of controllers can be shorted, a pin, grounded or badly connected. It is often required that such open/short situations do not cause fire, smoke nor loud noise. The NCP1602 integrates functions that help meet this requirement, for instance, in case of an improper pin connection (including GND) or of a short of the boost or bypass diode. As an example, we will illustrate here the circuit operation when the PFC bypass diode is shorted. When the PFC stage is plugged in, a large in-rush current takes place that charges the bulk capacitor to the line peak voltage. Traditionally, a bypass diode (D2 in the application schematic of Figure 2) is placed between the input and output high-voltage rails to divert this inrush current from the inductor and boost diode. When it is shorted, the bulk voltage being equal to the input voltage, the inductor slightly demagnetizes owing to the boost diode voltage drop. As this voltage is small, the demagnetization can be extremely long. This is generally far insufficient to prevent a cycle-by-cycle cumulative rise of the inductor current and an unsafe heating of the inductor, the MOSFET and the boost diode. As the internal 1602 watchdog may kick in during this long demagnetization VCTRLVout Iind 800 ms OVS Timer VDRV Figure 13. From Steady Stage the Bypass Diode is Shorted @ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 400 mA, NTC Shorted CAUTION: Please note that we do not guarantee that the a NCP1602-driven PFC stage necessarily passes all the safety tests and in particular the boost diode short one since the performance can vary with respect to the application or conditions. The reported tests are intended to illustrate the typical behavior of the part in one particular application, highlighting the protections helping pass the safety tests. The reported tests were made at 25°C ambient temperature. www.onsemi.com 12 NCP1602GEVB BILL OF MATERIALS Table 3. NCP1602GEVB BILL OF MATERIALS Reference Qty. Description Value Tolerance/ Constraints Footprint Manufacturer Part Number C1, C2 2 Y Capacitors 1 nF 400 V Through-Hole TDK CD70ZU2GA102MYNKA C4, C3A, C3B, C3C 4 X2 Capacitors 220 nF 305 V ac Through-Hole EPCOS B32922C3224K C5 1 Filtering Capacitors 470 nF 400 V Through-Hole EPCOS B32592N6474K C5A, C5B 2 Filtering Capacitors 220 nF 400 V Through-Hole EPCOS B32522−E6224−K000 C7 1 Electrolytic Capacitor 22 mF 50 V Through-Hole Various Various C6A, C6B 2 Bulk Capacitor 68 mF 450 V Through-Hole RuBYCON 450QXW68M12.5X40 C13 1 Capacitor 100 nF 50 V SMD, 1206 Various Various C10 1 Capacitor 220 nF 50 V SMD, 1206 Various Various Various C9 1 Capacitor 2.2 mF 50 V SMD, 1206 Various C11, C12 2 Capacitor NC 50 V SMD, 1206 Various Various CM1 1 Common Mode Filter 2 × 3.3 mH 5A Through-Hole Wurth Elektronik 750341632 L2 1 Boost Inductor 200 mH 6 A pk Through-Hole Wurth Elektronik 750370081 (EFD30) D1 1 Boost Diode MUR550 5 A, 520 V Through-Hole ON Semiconductor MUR550APFG D2 1 Bypass Diode 1N5406 3 A, 600 V Through-Hole ON Semiconductor 1N5406G D3, D4 2 Switching Diode 1N4148 100 V SOD123 ON Semiconductor MMSD4148T1G DZ2 1 33-V Zener Diode MMSZ33T1 33 V, 0.5 W SOD123 ON Semiconductor MMSZ33T1G U1 1 Diodes Bridge GBU406 4 A, 600 V Through-Hole LITE-ON GBU406 Q1 1 Power MOSFET IPA50R250CP 550 V TO220_C Infineon IPA50R250CP R8 1 Resistor 680 kW 1%, 1/4 W SMD, 1206 Various Various R9, R10 2 Resistor 1800 kW 1%, 1/4 W SMD, 1206 Various Various R27 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R11 1 Resistor 27 kW 1%, 1/4 W SMD, 1206 Various Various C8 1 Capacitor 1 nF 10%, 25 V SMD, 1206 Various Various R22 1 Resistor 5.1 MW 1%, 1/4 W SMD, 1206 Various Various R23 1 Resistor 240 kW 1%, 1/4 W SMD, 1206 Various Various R24 1 Resistor 240 kW 1%, 1/4 W SMD, 1206 Various Various Q2 1 Switch MOSFET NC NA NA NA NA R30 1 Resistor 0W NA NA NA NA R21 1 Resistor 39 kW 1%, 1/4 W SMD, 1206 Various Various R31 1 Resistor 10 kW 1%, 1/4 W SMD, 1206 Various Various R32 1 Resistor NC NA NA NA NA R33 1 Resistor NC NA NA NA NA R42 1 Resistor NC NA NA NA NA R41 1 Resistor NC NA NA NA NA R40 1 Resistor NC NA NA NA NA C30 1 Capacitor NC NA NA NA NA D6 1 Diode NC NA NA NA NA D5 1 Diode NC NA NA NA NA R39 1 Resistor NC NA NA NA NA R37 1 Resistor NC NA NA NA NA R36 1 Resistor NC NA NA NA NA R38 1 Resistor NC NA NA NA NA R34 1 Resistor NC NA NA NA NA R3 1 Resistor 80 mW 1%, 3 W Through-Hole Vishay LVR03R0800FE12 R1, R2 2 X2 Capacitor Discharge Resistors 1000 kW 1%, 500 V SMD, 1206 Various Various www.onsemi.com 13 NCP1602GEVB Table 3. NCP1602GEVB BILL OF MATERIALS (continued) Reference Qty. Description Value Tolerance/ Constraints Footprint Manufacturer Part Number R12 1 Resistor 22 kW 1%, 1/4 W SMD, 1206 Various Various R4 1 Resistor 10 kW 10%, 1/4 W SMD, 1206 Various Various R5 1 Resistor 2.2 W 10%, 1/4 W SMD, 1206 Various Various R6 1 Resistor 22 W 10%, 1/4 W SMD, 1206 Various Various R7, RZ 2 Resistors 0W 1%, 1/4 W SMD, 1206 Various Various U2 1 PFC Controller NCP1602-AEA NA TSOP6 ON Semiconductor NCP1602−AEA RTH1 1 Inrush Current Limiter B57153S150M 1.8 A max Through-Hole EPCOS B57153S0150M000 F1 1 4-A Fuse 4A-250V 250 V Through-Hole Multicomp MCPEP 4 A 250 V HS1 1 Heatsink_KL_195 − − − COLUMBIA-STAVER TP207ST, 120, 12.5, NA, SP, 03 REFERENCES [3] NCP1602 Evaluation Board User’s Manual https://cma.onsemi.com/pub_link/Collateral/EVBU M2302−D.PDF [1] “5 Key Steps to Designing a Compact, High-Efficiency PFC Stage Using The NCP1602”, Application note AND9218/D, http://www.onsemi.com/pub_link/Collateral/ AND9218−D.PDF [2] Data Sheet NCP1602/D, http://www.onsemi.com/pub_link/Collateral/ NCP1602−D.PDF www.onsemi.com 14 NCP1602GEVB ANNEX (Schematic & BOM for modifying the evaluation board in order to use the auxiliary winding voltage instead of the power MOSFET drain voltage for CS/ZCD pin) Using the schematic using Aux Winding Voltage has pros and cons. Pros: • R38 and R39 Value can be Small and Sensitivity to Noise and Parasitic Capacitance is Reduced • Consumes No Power during Standby even if R38 and R39 Value are Small GND DRV Vcc Vdrain Vsource Cons: • Brown-Out Detection is Not Possible when Using Brown-Out Activated Product Option • The Simple Inductor Becomes a Transformer to which an Auxiliary Winding is Added R7 0W DRV 4 3 CS/ZCD C11 NC C9 2.2 mF R12 22 kW C8 1 nF R11 27 kW C10 220 nF R27 0R R10 1800 kW R9 1800 kW R8 680 kW S3 Top View C13 100 nF VCC 5 2 GND 6 1 VCTRL FB R38 2.2 kW C12 NC R36 47 kW R39 30 kW C30 47 nF D6 1N4148 R40 100 W Vaux Vbulk While this evaluation board uses the power MOSFET drain voltage for ZCD detection using the CS/ZCD pin, it is possible to configure this same evaluation board for using the auxiliary winding voltage to feed the CS/ZCD pin for ZCD detection. The power section of the schematic does not change, it is only the control schematic which changes. The components on the path between the power MOSFET drain and CS/ZCD pin must be removed and new components placed between the auxiliary winding voltage (VAUX) and CS/ZCD pin must be added. The details of this modification are entirely described by the schematic of Figure 14 and, the bill of materials of Table 4. Application note AND9218/D [1] gives the design procedure and equations. Figure 14. Application Schematic − Control Section for ZCD Detection using Auxiliary Winding (VAUX) www.onsemi.com 15 NCP1602GEVB Table 4. NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING (VAUX) Reference Qty. Description Value Tolerance/ Constraints Footprint Manufacturer Part Number C1, C2 2 Y Capacitors 1 nF 400 V Through-Hole TDK CD70ZU2GA102MYNKA C4, C3A, C3B, C3C 4 X2 Capacitors 220 nF 305 V ac Through-Hole EPCOS B32922C3224K C5 1 Filtering Capacitors 470 nF 400 V Through-Hole EPCOS B32592N6474K C5A, C5B 2 Filtering Capacitors 220 nF 400 V Through-Hole EPCOS B32522−E6224−K000 C7 1 Electrolytic Capacitor 22 mF 50 V Through-Hole Various Various C6A, C6B 2 Bulk Capacitor 68 mF 450 V Through-Hole RuBYCON 450QXW68M12.5X40 C13 1 Capacitor 100 nF 50 V SMD, 1206 Various Various C10 1 Capacitor 220 nF 50 V SMD, 1206 Various Various C9 1 Capacitor 2.2 mF 50 V SMD, 1206 Various Various C11, C12 2 Capacitor NC 50 V SMD, 1206 Various Various CM1 1 Common Mode Filter 2 × 3.3 mH 5A Through-Hole Wurth Elektronik 750341632 L2 1 Boost Inductor 200 mH 6 A pk Through-Hole Wurth Elektronik 750370081 (EFD30) D1 1 Boost Diode MUR550 5 A, 520 V Through-Hole ON Semiconductor MUR550APFG D2 1 Bypass Diode 1N5406 3 A, 600 V Through-Hole ON Semiconductor 1N5406G D3, D4 2 Switching Diode 1N4148 100 V SOD123 ON Semiconductor MMSD4148T1G DZ2 1 33-V Zener Diode MMSZ33T1 33 V, 0.5 W SOD123 ON Semiconductor MMSZ33T1G U1 1 Diodes Bridge GBU406 4 A, 600 V Through-Hole LITE-ON GBU406 Q1 1 Power MOSFET IPA50R250CP 550 V TO220_C Infineon IPA50R250CP R8 1 Resistor 680 kW 1%, 1/4 W SMD, 1206 Various Various R9, R10 2 Resistor 1800 kW 1%, 1/4 W SMD, 1206 Various Various R27 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R11 1 Resistor 27 kW 1%, 1/4 W SMD, 1206 Various Various C8 1 Capacitor 1 nF 10%, 25 V SMD, 1206 Various Various R22 1 Resistor NC NA NA NA NA R23 1 Resistor NC NA NA NA NA R24 1 Resistor NC NA NA NA NA NA Q2 1 Switch MOSFET NC NA NA NA R30 1 Resistor NC NA NA NA NA R21 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R31 1 Resistor NC NA NA NA NA R32 1 Resistor NC NA NA NA NA R33 1 Resistor NC NA NA NA NA R42 1 Resistor NC NA NA NA NA R41 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R40 1 Resistor 100 W 10%, 1/4 W SMD, 1206 Various Various C30 1 Capacitor 47 nF 1%, 25 V SMD, 1206 Various Various D6 1 Diode 1N4148 100 V SOD123 ON Semiconductor MMSD4148T1G D5 1 Diode 0W 1%, 1/4 W SMD, 1206 Various Various R39 1 Resistor 30 kW 1%, 1/4 W SMD, 1206 Various Various R37 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R36 1 Resistor 47 kW 1%, 1/4 W SMD, 1206 Various Various R38 1 Resistor 2.2 kW 1%, 1/4 W SMD, 1206 Various Various R34 1 Resistor 0W 1%, 1/4 W SMD, 1206 Various Various R3 1 Resistor 80 mW 1%, 3 W Through-Hole Vishay LVR03R0800FE12 R1, R2 2 X2 Capacitor Discharge Resistors 1000 kW 1%, 500 V SMD, 1206 Various Various R12 1 Resistor 22 kW 1%, 1/4 W SMD, 1206 Various Various R4 1 Resistor 10 kW 10%, 1/4 W SMD, 1206 Various Various www.onsemi.com 16 NCP1602GEVB Table 4. NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING (VAUX) (continued) Reference Qty. Description Value Tolerance/ Constraints Footprint Manufacturer Part Number R5 1 Resistor 2.2 W 10%, 1/4 W SMD, 1206 Various Various Various R6 1 Resistor 22 W 10%, 1/4 W SMD, 1206 Various R7, RZ 2 Resistors 0W 1%, 1/4 W SMD, 1206 Various Various U2 1 PFC Controller NCP1602-AEA NA TSOP6 ON Semiconductor NCP1602−AEA RTH1 1 Inrush Current Limiter B57153S150M 1.8 A max Through-Hole EPCOS B57153S0150M000 F1 1 4-A Fuse 4A-250V 250 V Through-Hole Multicomp MCPEP 4 A 250 V HS1 1 Heatsink_KL_195 − − − COLUMBIA-STAVER TP207ST, 120, 12.5, NA, SP, 03 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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