Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO 250 V 2SD0662 2SD0662B (1.0) R 0.9 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 400 Collector-emitter voltage 2SD0662 (Base open) 2SD0662B VCEO Emitter-base voltage (Collector open) VEBO 200 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) (1.0) (1.5) 1.0±0.1 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) 6.9±0.1 ■ Features V 3 400 2 (2.5) 5 1 (2.5) V Collector current IC 70 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions VCEO IC = 100 µA, IB = 0 VEBO IE = 10 µA, IC = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 100 V, IB = 0 Forward current transfer ratio hFE * VCE = 10 V, IC = 5 mA VCE(sat) IC = 50 mA, IB = 5 mA Collector-emitter voltage (Base open) 2SD0662 2SD0662B Emitter-base voltage (Collector open) Collector-emitter saturation voltage Transition frequency Typ Max 200 Unit V 400 VCB = 10 V, IE = −10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Min VCB = 10 V, IE = 0, f = 1 MHz Cob 5 30 V 2 µA 220 1.2 50 V MHz 10 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE 30 to 100 60 to 150 100 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: November 2002 SJC00195BED 1 2SD0662, 2SD0662B PC Ta IC VCE Ta = 25°C 500 400 300 200 80 0.6 mA 60 0.4 mA 40 −25°C 60 40 0.2 mA 20 20 20 40 60 0 80 100 120 140 160 0 2 80 60 40 20 0.8 1.2 1.6 Collector-emitter saturation voltage VCE(sat) (V) 100 0.4 2.0 100 0 10 0 0.4 1 25°C −25°C 0.1 2.0 1.5 1.0 0.5 0.01 0.01 0.1 1 0 10 0 0.2 180 25°C −25°C 60 0.6 0.8 1.0 ICBO Ta 104 120 VCB = 250 V 103 ICBO (Ta) ICBO (Ta = 25°C) Transition frequency fT (MHz) Ta = 75°C 0.4 Base-emitter voltage VBE (V) VCB = 10 V Ta = 25°C 140 120 VCE = 10 V Ta = 25°C fT I E 240 2.0 IB VBE Ta = 75°C 160 300 1.6 3.0 Collector current IC (mA) VCE = 10 V 1.2 2.5 hFE IC 360 0.8 Base-emitter voltage VBE (V) IC / IB = 10 10 Base current IB (mA) 0 0.01 8 VCE(sat) IC VCE = 10 V Ta = 25°C 0 6 Collector-emitter voltage VCE (V) IC I B 0 4 Base current IB (mA) 0 120 Collector current IC (mA) Ta = 75°C 80 100 Ambient temperature Ta (°C) Forward current transfer ratio hFE VCE = 10 V 25°C 100 Collector current IC (mA) 100 600 120 IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 700 0 100 80 60 40 102 10 20 0.1 1 Collector current IC (mA) 2 IC VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 800 10 0 −1 −10 Emitter current IE (mA) SJC00195BED −100 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL