Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO −250 V Collector-emitter voltage (Base open) VCEO −200 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −70 mA Peak collector current ICP −100 mA Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.2 –0.1 0.45+0.2 –0.1 (1.27) (1.27) 1 2 3 (3.2) Parameter Collector-base voltage (Emitter open) 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −200 V Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 V hFE VCE = −10 V, IC = −5 mA 60 VCE(sat) IC = −50 mA, IB = −5 mA Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Conditions VCB = −10 V, IE = 0, f = 1 MHz Cob Min 50 Typ Max 220 −1.5 V 80 5 Unit MHz 10 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 60 to 150 100 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00006BED 1 2SA0879 PC Ta IC VCE 0.6 0.4 −80 − 0.8 mA −60 − 0.6 mA − 0.4 mA −40 − 0.2 mA −20 0.2 40 60 0 80 100 120 140 160 −2 0 Ambient temperature Ta (°C) Collector current IC (mA) −1.6 −1.2 Ta = 75°C − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −25°C −80 −60 −40 0 − 0.4 − 0.8 hFE IC −1.2 −2.0 Transition frequency fT (MHz) 200 Ta = 75°C 150 25°C −25°C 50 −10 Collector current IC (mA) 2 −100 120 100 80 60 40 0 0.1 1 10 Emitter current IE (mA) SJC00006BED Ta = 75°C −25°C − 0.01 − 0.1 −1 −10 −100 Cob VCB 20 −1 25°C Collector current IC (mA) VCB = −10 V f = 100 MHz Ta = 25°C 140 0 − 0.1 −1 fT I E 250 100 −1.6 160 VCE = −10 V −2.4 −10 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) −2.0 IC / IB = 10 − 0.1 0 −1.2 −1.6 Base current IB (mA) VCE(sat) IC −20 − 0.4 300 − 0.4 − 0.8 −1.2 0 −100 25°C −100 0 0 −10 VCE = −10 V VCE = −10 V Ta = 25°C − 0.8 Forward current transfer ratio hFE −8 −40 IC VBE −120 −2.0 Base current IB (mA) −6 −60 Collector-emitter voltage VCE (V) IB VBE −2.4 0 −4 Collector to emitter saturation voltage VCE(sat) (V) 20 −80 −20 100 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 VCE = −10 V Ta = 25°C −100 Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (W) 0.8 −120 Ta = 25°C IB = −2 mA −1.8 mA −1.6 mA −1.4 mA −1.2 mA −1.0 mA −100 1.0 0 IC I B −120 1.2 16 f = 1 MHz IE = 0 Ta = 25°C 14 12 10 8 6 4 2 0 −1 −10 −100 Collector-base voltage VCB (V) 2SA0879 IEBO Ta ICBO Ta 10000 VEB = −5 V ICBO (Ta) ICBO (Ta = 25°C) IEBO (Ta) IEBO (Ta = 25°C) 100 100 10 10 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 −1 000 −100 1000 1 000 1 Safe operation area VCB = −250 V Collector current IC (mA) 10 000 0 40 80 120 160 Ambient temperature Ta (°C) SJC00006BED 200 Single pulse Ta = 25°C ICP t = 10 ms IC t=1s −10 −1 − 0.1 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL