Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • Allowing automatic insertion with radial taping 16.0±1.0 ■ Features 10.8±0.2 7.5±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open) VCEO −150 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1 A Peak collector current ICP −1.5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 Parameter 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −150 Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 90 hFE2 VCE = −5 V, IC = −500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA VBE(sat) Base-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V V 330 − 0.5 −2.0 V IC = −500 mA, IB = −50 mA −1.0 −2.0 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 30 pF V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 90 to 155 130 to 220 185 to 330 Publication date: February 2002 SJD00070BED 1 2SB1414 PC Ta VCE(sat) IC 1.6 1.2 0.8 −1 75°C −0.1 0 40 80 120 160 −0.001 −1 Ambient temperature Ta (°C) Transition frequency fT (MHz) Ta = 75°C 200 25°C 150 −25°C 100 50 −100 200 100 1 −10 −100 −100 10 90 −1 000 IE = 0 f = 1 MHz TC = 25°C 75 60 45 30 15 100 0 −1 −10 −100 Collector-base voltage VCB (V) 104 −1 000 Thermal resistance Rth (°C/W) Collector current IC (A) t = 10 ms DC − 0.01 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 2 −0.1 Rth t IC −10 75°C Emitter current IE (mA) ICP − 0.001 −1 Ta = −25°C Cob VCB 300 0 −1 000 Single pulse TC = 25°C − 0.1 25°C Collector current IC (mA) Safe operation area −1 −1 −0.01 −1 −1 000 IE = 0 f = 1 MHz TC = 25°C Collector current IC (mA) −10 −10 fT I E 250 −10 −100 400 VCE = −10 V 0 −1 −10 IC / IB = 10 Collector current IC (mA) hFE IC 300 Forward current transfer ratio hFE Ta = 25°C −25°C −0.01 0.4 0 VBE(sat) IC −100 IC / IB = 10 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (W) Without heat sink −10 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 2.0 10−1 1 Time t (s) SJD00070BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL