TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature E 3 SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPL761 Collector-base voltage (IE = 0) Emitter-base voltage Continuous collector current TIPL761A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL761 TIPL761A TIPL761 TIPL761A VCES VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V VEBO 10 V IC 4 A Peak collector current (see Note 1) ICM 8 A Continuous device dissipation at (or below) 25°C case temperature Ptot 100 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICEO IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 10 mA L = 25 mH MIN (see Note 2) TIPL761 400 TIPL761A 450 TYP MAX V VCE = 850 V VBE = 0 TIPL761 Collector-emitter VCE = 1000 V VBE = 0 TIPL761A cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL761 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL761A 200 Collector cut-off VCE = 400 V IB = 0 TIPL761 50 current VCE = 450 V IB = 0 TIPL761A 50 VEB = 10 V IC = 0 VCE = 5V IC = 0.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance 50 50 1 (see Notes 3 and 4) 20 IB = 0.5 A IC = 2.5 A 0.8 A IC = 4A (see Notes 3 and 4) 2.5 IB = 0.8 A IC = 4A TC = 100°C 5.0 IB = 0.5 A IC = 2.5 A IB = 0.8 A IC = µA mA 1.0 V 1.2 (see Notes 3 and 4) 1.4 E T E L O S B O 4A µA 60 IB = 4A UNIT V 1.3 IB = 0.8 A IC = TC = 100°C VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz VCB = 20 V IE = 0 f = 0.1 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.25 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † tsv Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time tsv Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time TEST CONDITIONS IC = 4 A VBE(off) = -5 V IB(on) = 0.8 A IC = 4 A IB(on) = 0.8 A VBE(off) = -5 V TC = 100°C † MIN (see Figures 1 and 2) (see Figures 1 and 2) MAX UNIT 2.5 µs 300 ns 250 ns 150 ns 400 ns 3 µs 500 ns 250 ns 150 ns 750 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP741AA 100 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TC = 125°C TC = 25°C TC = -65°C VCE = 5 V 10 TCP741AB 5·0 TC = 25°C TC = 100°C 4·0 IC = IC = IC = IC = 3·0 1·0 0 1·0 10 0 0·5 IC - Collector Current - A 1·0 1·15 1·05 0·95 IC = IC = IC = IC = 0·85 4 3 2 1 A A A A 0·75 0·2 0·4 0·6 0·8 1·0 IB - Base Current - A Figure 5. 1·2 1·4 1·6 1·0 TIPL761A VCE = 1000 V 0·1 TIPL761 VCE = 850 V 0·01 0·001 -60 -30 0 30 60 90 120 TC - Case Temperature - °C Figure 6. 4 TCP741AD 10 ICES - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP741AC TC = 25°C 2·0 Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·25 1·5 IB - Base Current - A Figure 3. 0 A A A A 2·0 E T E L O S B O 1·0 0·1 4 3 2 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAP741AB IC - Collector Current - A 10 1·0 0.1 10 µs tp = tp = 100 µs tp = 1 ms tp = 10 ms DC Operation E T E L O S B O 0·01 1·0 TIPL761 TIPL761A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. ZθJC/RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP741AE 1·0 50% 20% 10% 0·1 5% 0% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 0·01 10-5 10-4 10-3 t1 t2 ( ) 10-2 ZθJC RθJC · R θJC(max) 10-1 100 t1 - Power Pulse Duration - s Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5