TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPL765 Collector-base voltage (IE = 0) TIPL765A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL765 TIPL765A TIPL765 TIPL765A VCES VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V VEBO 10 V IC 10 A Peak collector current (see Note 1) ICM 15 A Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W Tj -65 to +150 °C Tstg -65 to +150 °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICEO IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) TIPL765 400 TIPL765A 450 TYP MAX V VCE = 850 V VBE = 0 TIPL765 Collector-emitter VCE = 1000 V VBE = 0 TIPL765A cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL765 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL765A 200 Collector cut-off VCE = 400 V IB = 0 TIPL765 50 current VCE = 450 V IB = 0 TIPL765A 50 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio IB = 0.4 A IC = 2A Collector-emitter IB = 1A IC = 5A saturation voltage IB = 2A IC = 10 A Base-emitter saturation voltage Current gain bandwidth product Output capacitance IB = 2A IB = 0.4 A IC = 10 A IC = 50 50 1 IC = 0.5 A (see Notes 3 and 4) 15 µA µA mA 60 0.5 (see Notes 3 and 4) 1.0 2.5 TC = 100°C V 5.0 1.1 2A E T E L O S B O 5A UNIT IB = 1A IC = IB = 2A IC = 10 A IB = 2A IC = 10 A TC = 100°C VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz (see Notes 3 and 4) 1 MHz 1.3 1.7 V 1.6 8 MHz 150 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † MIN MAX UNIT Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time tsv Voltage storage time 3.5 µs trv Voltage rise time 400 ns tfi Current fall time 300 ns tti Current tail time txo Cross over time IC = 10 A VBE(off) = -5 V IB(on) = 2 A IC = 10 A IB(on) = 2 A VBE(off) = -5 V TC = 100°C (see Figures 1 and 2) (see Figures 1 and 2) 2 µs 300 ns 200 ns 50 ns 400 ns 80 ns 500 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP tsv AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP765AE 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 TCP765AF 5·0 IC = IC = IC = IC = 4·0 TC = 25°C 3·0 2·0 1·0 E T E L O S B O 1·0 0·1 1·0 0 0·01 10 0·1 IC - Collector Current - A 1A 2A 5A 10 A 3·0 2·0 1·0 1·4 1·2 1·0 IC = IC = IC = IC = 0·8 10 A 5A 2A 1A 0·6 0·1 1·0 IB - Base Current - A Figure 5. 10 0 0·5 1·0 1·5 2·0 IB - Base Current - A Figure 6. 4 TCP765AG 1·6 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP765AJ IC = IC = IC = IC = TC = 100°C 0 0·01 10 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 4·0 1·0 IB - Base Current - A Figure 3. 5·0 1A 2A 5A 10 A AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP765AH ICES - Collector Cut-off Current - µA 4·0 1·0 TIPL765A VCE = 1000 V 0·1 TIPL765 VCE = 850 V E T E L O S B O 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP765AB 10 1·0 0.1 tp = 100 µs tp = 500 µs tp = 1 ms tp = 2 ms tp = 5 ms tp = 10 ms tp = 100 ms DC Operation 0·01 1·0 TIPL765 TIPL765A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5