TIPL765, TIPL765A

TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
10 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
●
1000 Volt Blocking Capability
●
125 W at 25°C Case Temperature
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
TIPL765
Collector-base voltage (IE = 0)
TIPL765A
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIPL765
TIPL765A
TIPL765
TIPL765A
VCES
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
VEBO
10
V
IC
10
A
Peak collector current (see Note 1)
ICM
15
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
125
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Emitter-base voltage
Continuous collector current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
ft
Cob
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC =
100 mA
L = 25 mH
MIN
(see Note 2)
TIPL765
400
TIPL765A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
TIPL765
Collector-emitter
VCE = 1000 V
VBE = 0
TIPL765A
cut-off current
VCE = 850 V
VBE = 0
TC = 100°C
TIPL765
200
VCE = 1000 V
VBE = 0
TC = 100°C
TIPL765A
200
Collector cut-off
VCE = 400 V
IB = 0
TIPL765
50
current
VCE = 450 V
IB = 0
TIPL765A
50
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off
current
Forward current
transfer ratio
IB =
0.4 A
IC =
2A
Collector-emitter
IB =
1A
IC =
5A
saturation voltage
IB =
2A
IC = 10 A
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
IB =
2A
IB =
0.4 A
IC = 10 A
IC =
50
50
1
IC = 0.5 A
(see Notes 3 and 4)
15
µA
µA
mA
60
0.5
(see Notes 3 and 4)
1.0
2.5
TC = 100°C
V
5.0
1.1
2A
E
T
E
L
O
S
B
O
5A
UNIT
IB =
1A
IC =
IB =
2A
IC = 10 A
IB =
2A
IC = 10 A
TC = 100°C
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
(see Notes 3 and 4)
1 MHz
1.3
1.7
V
1.6
8
MHz
150
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
TEST CONDITIONS
†
MIN
MAX
UNIT
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
3.5
µs
trv
Voltage rise time
400
ns
tfi
Current fall time
300
ns
tti
Current tail time
txo
Cross over time
IC = 10 A
VBE(off) = -5 V
IB(on) = 2 A
IC = 10 A
IB(on) = 2 A
VBE(off) = -5 V
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
2
µs
300
ns
200
ns
50
ns
400
ns
80
ns
500
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
tsv
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
E
T
E
L
O
S
B
O
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
A (90%)
IB
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP765AE
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCP765AF
5·0
IC =
IC =
IC =
IC =
4·0
TC = 25°C
3·0
2·0
1·0
E
T
E
L
O
S
B
O
1·0
0·1
1·0
0
0·01
10
0·1
IC - Collector Current - A
1A
2A
5A
10 A
3·0
2·0
1·0
1·4
1·2
1·0
IC =
IC =
IC =
IC =
0·8
10 A
5A
2A
1A
0·6
0·1
1·0
IB - Base Current - A
Figure 5.
10
0
0·5
1·0
1·5
2·0
IB - Base Current - A
Figure 6.
4
TCP765AG
1·6
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AJ
IC =
IC =
IC =
IC =
TC = 100°C
0
0·01
10
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
4·0
1·0
IB - Base Current - A
Figure 3.
5·0
1A
2A
5A
10 A
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP765AH
ICES - Collector Cut-off Current - µA
4·0
1·0
TIPL765A
VCE = 1000 V
0·1
TIPL765
VCE = 850 V
E
T
E
L
O
S
B
O
0·01
-80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 7.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP765AB
10
1·0
0.1
tp = 100 µs
tp = 500 µs
tp =
1 ms
tp =
2 ms
tp =
5 ms
tp = 10 ms
tp = 100 ms
DC Operation
0·01
1·0
TIPL765
TIPL765A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5