Transistors 2SA2028 Silicon PNP epitaxial planer type For DC-DC converter (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Large current capacitance • Low collector to emitter saturation voltage • High-speed switching • Small type package, allowing downsizing and thinning of the equipment. 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Symbol Rating Unit VCBO −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −3 A Collector current IC −1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector to base voltage 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marking Symbol: AT ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = −10 µA, IE = 0 −20 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −20 V Emitter to base voltage VEBO Forward current transfer ratio * Collector to emitter saturation voltage Collector output capacitance Transition frequency IE = −10 µA, , IC = 0 −5 hFE VCE = −2 V, IC = −100 mA 160 VCE(sat) IC = −200 mA, IB = −10 mA Cob fT V 560 −40 −100 mV VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF VCB = −10 V, IE = 10 mA f=200 MHz 170 MHz 1