Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm ■ 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Collector to 2SB940 base voltage 2SB940A Collector to 2SB940 Ratings –200 VCBO –200 –150 VCEO emitter voltage 2SB940A –180 Unit V Peak collector current ICP –3 A Collector current IC –2 A PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 16.7±0.3 4.2±0.2 7.5±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 –6 dissipation 1.4±0.1 V VEBO 30 φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 2.7±0.2 4.0 ● 14.0±0.5 High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –200V, IE = 0 –50 µA Emitter cutoff current IEBO VEB = –4V, IC = 0 –50 µA VCBO IC = –50µA, IE = 0 Collector to base voltage Collector to emitter 2SB940 voltage 2SB940A Emitter to base voltage IC = –5mA, IB = 0 VEBO IE = –500µA, IC = 0 –6 * V –150 VCEO hFE1 Forward current transfer ratio –200 V –180 VCE = –10V, IC = –150mA 60 hFE2 VCE = –10V, IC = –400mA 50 V 240 Base to emitter voltage VBE VCE = –10V, IC = –400mA –1 V Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA –1 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz *h FE1 30 MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SB940, 2SB940A PC — Ta IC — VCE –500 –4.0mA –3.5mA –400 30 –3.0mA –2.5mA –300 (1) 20 –2.0mA –200 10 (2) –1.0mA 60 80 100 120 140 160 –2 –4 –6 –8 –10 0 hFE — IC 3000 25˚C –25˚C – 0.1 – 0.03 – 0.1 – 0.3 –1 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 Collector current IC (A) –1 –3 Area of safe operation (ASO) –10 ICP t=0.5ms 5ms 1ms – 0.3 DC – 0.01 –1 –3 –10 –30 2SB940A 2SB940 – 0.1 – 0.03 –100 –300 –1000 Collector to emitter voltage VCE 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C –1 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 IC 100 Collector current IC (A) –100 –30 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –3 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –1.0 VCE=–10V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) TC=100˚C 300 – 0.8 fT — IC 1000 –1 – 0.6 VCE=–10V Forward current transfer ratio hFE –3 – 0.4 10000 IC/IB=10 –10 – 0.2 Base to emitter voltage VBE (V) 10000 – 0.3 Collector current IC (A) –12 Collector to emitter voltage VCE (V) VCE(sat) — IC –3 –25˚C 0 0 Ambient temperature Ta (˚C) – 0.01 – 0.01 – 0.03 –1.2 – 0.4 0 40 25˚C TC=100˚C – 0.5mA (4) 20 –1.6 – 0.8 –1.5mA –100 (3) 0 2 VCE=–10V IB=–4.5mA Collector current IC (A) 40 –2.0 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –600 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10